100V TRANSISTOR Search Results

100V TRANSISTOR Result Highlights (4)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet

100V TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE74 Abstract: 10-32 UNF NPN transistor collector base and emitter Contextual Info: NTE74 Silicon NPN Transistor General Purpose Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE74 10-32-UNF-2A NTE74 10-32 UNF NPN transistor collector base and emitter	PDF
NPN transistor collector base and emitter Abstract: NTE96 10-32 UNF 2A Contextual Info: NTE96 Silicon NPN Transistor Power Switching Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE96 10-32-UNF-2A NPN transistor collector base and emitter NTE96 10-32 UNF 2A	PDF
K1X01 Abstract: K1X04 K1X08 TMC262 600r/100MHz FDD8424H K2X10 fdd8424 USBUF02W6 27r0 Contextual Info: TMC262 EvalBoard 1v00 TP1 VS TP2 +3V3 LM2594HVM-3.3 GND PWR L1 1K D3 LED Gruen R1 C7 + C6 100nF 120µF/25V D2 IC1 SS16 C5 100nF/100V + C4 100µF/100V SMBJ60A D1 + C3 + C2 100µF/100V + 100µF/100V C1 100µF/100V 150 µH K1 GND Firma TMC Maßstab 101,34% Änderung	Original	TMC262 LM2594HVM-3 100nF F/25V 100nF/100V F/100V SMBJ60A K1X01 K1X04 K1X08 600r/100MHz FDD8424H K2X10 fdd8424 USBUF02W6 27r0	PDF
Zetex ZXTP19100CZ Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA Contextual Info: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP	Original	ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541 Zetex ZXTP19100CZ TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA	PDF
B30NF10 Abstract: p30nf10 P30NF10FP STP30NF10 equivalents mosfet STP30NF10 equivalents P30NF b30nf B30NF10d STB30NF10 STB30NF10T4 Contextual Info: STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB30NF10 100V <0.045Ω 35A STP30NF10 100V <0.045Ω 35A STP30NF10FP 100V <0.045Ω	Original	STB30NF10 STP30NF10 STP30NF10FP D2PAK/TO-220/TO-220FP STP30NF10 O-220 O-220FP B30NF10 p30nf10 P30NF10FP STP30NF10 equivalents mosfet STP30NF10 equivalents P30NF b30nf B30NF10d STB30NF10 STB30NF10T4	PDF
ZXTN19100CFF Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA Contextual Info: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP	Original	ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 ZXTN19100CFF TS16949 ZXTP19100CFF ZXTP19100CFFTA	PDF
Contextual Info: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP	Original	ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541	PDF
Contextual Info: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP	Original	ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541	PDF
Bv 42 transistor Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC Contextual Info: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC	PDF
SOT89 transistor marking 5A Abstract: ZXTN2011Z ZXTN2011ZTA Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA	PDF
Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors	PDF
ZX5T853Z Abstract: ZX5T853ZTA Contextual Info: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in	Original	ZX5T853Z ZX5T853ZTA ZX5T853Z ZX5T853ZTA	PDF
SOT89 transistor marking 4A high frequency Abstract: ZX5T953ZTA ZX5T953Z Contextual Info: ZX5T953Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC	Original	ZX5T953Z -100V ZX5T953ZTA SOT89 transistor marking 4A high frequency ZX5T953ZTA ZX5T953Z	PDF
NTE46 Contextual Info: NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE46 500mA 100mA, 100MHz, 100kHz NTE46	PDF

ZXTP2013Z Abstract: ZXTP2013ZTA Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line	Original	ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA	PDF
ZXTN2011G Abstract: ZXTN2011GTA ZXTN2011GTC Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC	PDF
fzt 655 Abstract: FZT marking code Contextual Info: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA	Original	FZT7053 OT223 100mA AEC-Q101 J-STD-020 MIL-STD-202, OT223 FZT7053 DS31895 fzt 655 FZT marking code	PDF
ZXTN Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor	PDF
ZXT953K Abstract: ZXT953KTC of ZXT953KTC Contextual Info: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits	Original	ZXT953K -100V ZXT953KTC ZXT953K ZXT953KTC of ZXT953KTC	PDF
ZX5T953GTA Abstract: ZX5T953G ZX5T953GTC x5t953 Contextual Info: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953	PDF
ZX5T853G Abstract: ZX5T853GTA ZX5T853GTC Contextual Info: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T853G OT223 OT223 ZX5T853GTA ZX5T853GTC ZX5T853G ZX5T853GTA ZX5T853GTC	PDF
Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line	Original	ZXTP2013Z -100V TP2013ZTA	PDF
Contextual Info: ZXTP2013G 100V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits	Original	ZXTP2013G OT223 -100V OT223 TP2013GTA TP2013GTC un250	PDF
CEB1710 Abstract: CEP1710 CEF1710 Contextual Info: CEP1710/CEB1710 CEF1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP1710 Type 100V 85mΩ 19A 10V CEB1710 100V 85mΩ 19A 10V CEF1710 100V 85mΩ 19A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability.	Original	CEP1710/CEB1710 CEF1710 CEP1710 CEB1710 O-263 O-220 O-220F O-220/263 CEB1710 CEP1710 CEF1710	PDF

100V TRANSISTOR Search Results

100V TRANSISTOR Result Highlights (4)

100V TRANSISTOR Datasheets Context Search

NTE74

NPN transistor collector base and emitter

K1X01

Zetex ZXTP19100CZ

B30NF10

ZXTN19100CFF

Bv 42 transistor

SOT89 transistor marking 5A

ZX5T853Z

SOT89 transistor marking 4A high frequency

NTE46

ZXTP2013Z

ZXTN2011G

fzt 655

ZXTN

ZXT953K

ZX5T953GTA

ZX5T853G

CEB1710