100V FAST RECOVERY DIODE Search Results

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number ES2B product family ULTRA FAST RECOVERY RECTIFIERS package type HSMA VRM PRV 100V Ifsm 50A IF(AV) 2.0A @Vf 0.975V @If 2.0A Trr 50nS IR 5.0µA @VR 100V Package Qty Tape : 3K/Reel, 48K/Ctn;

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number ES1B product family ULTRA FAST RECOVERY RECTIFIERS package type HSMA VRM PRV 100V Ifsm 30A IF(AV) 1.0A @Vf 0.975V @If 1.0A Trr 50nS IR 5.0µA @VR 100V Package Qty Tape : 3K/Reel, 48K/Ctn;

US1B

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number US1B product family ULTRA FAST RECOVERY RECTIFIERS package type DO-214AC VRM PRV 100V Ifsm 30A IF(AV) 1.0A @Vf 1.0V @If 1.0A Trr 50nS IR 10µA @VR 100V Package Qty Tape : 5K/Reel, 80K/Ctn;

100v 20a fast recovery power diode

Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
Contextual Info: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter

TVR1B

Abstract: toshiba diode "do-41"
Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE - O • • • TVR1B/G/J TV APPLICATIONS. FAST RECOVERY U n it in mm Average Forward Current : I f (AV) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : Vr r m = 100V~600V Reverse Recovery Time : tr r =2.0^s

TVR2B

Abstract: toshiba diode "do-41"
Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE U nit in mm TV APPLICATIONS. FAST RECOVERY • Average Forward C urrent • Repetitive Peak Reverse Voltage V r r m = 100V~600V • Reverse Recovery Time trr = 5~20,us Ip (AV) = 0.5 A (Ta = 50°C) M A X IM U M RATING

BYW51100

Abstract: BYW51-100 BYW51 BYW51150 BYW51-150 BYW51200 BYW51-200 FAIRCHILD to220ab package
Contextual Info: BYW51-100, BYW51-150, BYW51-200 December 2001 8A, 100V - 200V Ultrafast Dual Diodes Features The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers tRR < 35ns . They use a planar ion-implanted epitaxial construction. • Ultra Fast Recovery Time (<35ns)

Contextual Info: T O SH IB A TVR2B,TVR2G,TVR2J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR2B, TVR2G, TVR2J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : If (AV) =0.5A (Ta = 50°C) Repetitive Peak Reverse Voltage : V t?:r m = 100V~600V

Contextual Info: T O SH IB A TVR1 B,TVR1G,TVR1 J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : I f ( A V ) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : V t?:rm = 100V~600V

Power MOSFET 50V 20A

Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
Contextual Info: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant

Contextual Info: 50 and 75ns ULTRA-FAST RECOVERY AXIAL LEAD RECTIFIER DIODES RUS2 PRV to 1000 V 50 to 75ns recovery RUS3 Small size High temperature stability RUS5 High surge capability Exceptionally low leakage Avalanche characteristics RUS1 50V 100V 200V 400V 600V 800V 1000V

100V 60A Mosfet

Abstract: mosfet 50v 30a LTP60N10
Contextual Info: LTP60N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter • For high-frequency switching

Contextual Info: MICRO QUALITY / DIB SEM IC O N D U C TO R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery VM-X Series For Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current Glass Passivated Diodes Standard .1 0 "— 2,54M M Dip Lead Spacing

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5ASJ-2 HIGH-SPEED SWITCHING USE FS5ASJ-2 ' 4 V D R IV E ' V . .100V ' rDS ON (MAX) . .0.4Í2 ' Id . .5A ' Integrated Fast Recovery Diode (TYP.) d ss 80ns APPLICATION

VY100X

Abstract: VYA100X
Contextual Info: MICRO QUALITY / IBR S E M ICO ND UC TO R , INC. 25 Amp Fast Recovery Time Integrated Rectifiers v y Series \> 200 Nanosecond Reverse Recovery 100V, 200V, and 400V, VHHM Ratings & 150 Amps One Half Cycle Surge Current 2000V Minimum Circuit-To-Case Insulation

VM48XS

Contextual Info: mCROSEîlI CORP/ niCRO SbE ]> • bllSTD? 070 ■ M û L 7'2 3 r * 0 S / M IC R O Q U A L IT Y / SEMICONDUCTOR. INC DIB .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount VM-XS Series For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V VRRM Ratings

VM48X

Abstract: VM18X vm68 VM68X VM08X VM28X VM88X s60V VM108X 6 AMP 1000V DIODE lead
Contextual Info: SbE J> niCROSEfll CORP/ MICRO • b llS 'îO ? D O O lE ^ l 2TÛ ■ NÜL P 2 3 'O S M ICRO Q U A L IT Y / DIB SEMICONDUCTOR. INC .8 Amp Dual ln~Lin6 Bridge, Fast Recovery VM-X Series For Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V VRRM Ratings

APT10M25BNFR

Abstract: N mos 100v 100A
Contextual Info: A d van ced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR 100V 75A 0.025a 100V 67A 0.030Ü FAST RECOVERY MOSFET FAMILY POWER MOS IV N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol 100 Continuous Drain Current 'd @ Tc

fs30umh-2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. . 1.3 \ j j 3.6 1.0 ÎL 0.8 2.54 • 2.5V DRIVE • VDSS .100V • Integrated Fast Recovery Diode TYP.

Contextual Info: MITSUBISHI Neh POWER MOSFET F S 1 O A S J -2 HIGH-SPEED SWITCHING USE FS1 OASJ-2 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 100V . 0.190 .10A 95ns APPLICATION

Contextual Info: APT40DS10HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 100V IF = 40A @ Tc = 80°C Application •   Switch mode power supplies rectifier Induction heating Welding equipment Features       + ~ ~ Ultra fast recovery times

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE FS30AS-2 .àÈÊm • 10V DRIVE • rDS ON (MAX) . .100V . 100m£2 • Id . .30A • V d s s . • Integrated Fast Recovery Diode (TYP.)

Contextual Info: M ICRO Q U A L IT Y / 1 /lD S E M IC O N D U C T O R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount T \T T l For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current

Contextual Info: APT40DS10HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 100V IF = 40A @ Tc = 80°C Application • • • Switch mode power supplies rectifier Induction heating Welding equipment Features • • • • • • + ~ ~ Ultra fast recovery times