100NX Search Results

nitride

Abstract: RFP-100NXXAF
Contextual Info: Model RFP-100NXXAF RoHS Compliant Flangeless Attenuators 100 Watts General Specifications Resistive Element Substrate Cover Leads Thick film Aluminum nitride ceramic Alumina ceramic 99% pure silver .005” thick Features: • DC – see chart • 100 Watts

Contextual Info: Model 100NXXAF Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Lead s : Thick film Aluminum Nitride ceramic 99.99% pure silver (.005” thick) Electrical Specifications Features: • DC – 3.0 GHz  100 Watts  AlN Ceramic

100NXXAE

Contextual Info: Model 100NXXAE Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Mounting Flange Lead s : Thick film Aluminum Nitride ceramic Copper, Nickel plated per QQ-N-290 99.99% pure silver (.005” thick) Electrical Specifications Features:

Contextual Info: Model 100NXXAF Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Lead s : Thick film Aluminum Nitride ceramic 99.99% pure silver (.005” thick) Electrical Specifications Features: • DC – 3.0 GHz • 100 Watts • AlN Ceramic

100N30A

Abstract: 100NXXAE 100N30
Contextual Info: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290 • DC – See table Lead s : 99.99% pure silver (.006” thick)

Contextual Info: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Features: • DC – See table  100 Watts  ALN Ceramic Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290

Contextual Info: Model RFP-100NXXAF RoHS Compliant Flanged Resistors 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Leads Thick film Aluminum nitride ceramic Alumina ceramic 99% pure silver .005” thick Features: • DC – see chart • 100 Watts

Contextual Info: 2855-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2850-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MC338 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.630

Contextual Info: 2854-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

RFP-100N1AF

Abstract: RFP-100N4AF RFP-100N2AF RFP-100N3AF RFP-100N5AF RFP-100N6AF RFP-100N9AF RFP-100NXXAF RFP-100N10AF
Contextual Info: 100 Watts General Specifications Resistive Element: Substrate: Cover: Lead s : Thick film Aluminum nitride ceramic Alumina ceramic 99.99% pure silver (.005” thk) Electrical Specifications Features Attenuation Value: • DC – 2.5 GHz • 100 Watts • Aluminum Nitride (AlN) Ceramic

pic 817

Abstract: diode 2H 1NU financial functions ti 83 plus TI-83 TI 83 DIAGRAM "the rose" block diagram of prepaid energy meter using coin echelon FT RABBIT 6000 block diagram of prepaid energy meter
Contextual Info: 7.5” TI-83 Plus Guidebook 10” 83P00COV.DOC TI-83 Plus translation master Win Jackson Revised: 11/03/98 2:00 PM Printed: 02/10/99 1:33 PM Page 1 of 2 TI.83 Plus GRAPHING CALCULATOR GUIDEBOOK 1999 Texas Instruments Incorporated. , TI-GRAPH LINK, Calculator-Based Laboratory, CBL, Calculator-Based Ranger, and CBR are trademarks of

Contextual Info: 2852-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC337PK Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC328P Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25è V(BR)CBO (V)30 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC307VI18 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC328PS Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC328PM Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC177C Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC177PBK Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC337BP Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2854-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2853-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)