100NX Search Results

100N30

Contextual Info: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Features: • DC – See table  100 Watts  ALN Ceramic Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290

nitride

Abstract: RFP-100NXXAF
Contextual Info: Model RFP-100NXXAF RoHS Compliant Flangeless Attenuators 100 Watts General Specifications Resistive Element Substrate Cover Leads Thick film Aluminum nitride ceramic Alumina ceramic 99% pure silver .005” thick Features: • DC – see chart • 100 Watts

Contextual Info: Model 100NXXAF Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Lead s : Thick film Aluminum Nitride ceramic 99.99% pure silver (.005” thick) Electrical Specifications Features: • DC – 3.0 GHz  100 Watts  AlN Ceramic

100NXXAE

Contextual Info: Model 100NXXAE Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Mounting Flange Lead s : Thick film Aluminum Nitride ceramic Copper, Nickel plated per QQ-N-290 99.99% pure silver (.005” thick) Electrical Specifications Features:

Contextual Info: Model 100NXXAF Flangeless Attenuator 100 Watts General Specifications Resistive Element Substrate Lead s : Thick film Aluminum Nitride ceramic 99.99% pure silver (.005” thick) Electrical Specifications Features: • DC – 3.0 GHz • 100 Watts • AlN Ceramic

100N30A

Abstract: 100NXXAE 100N30
Contextual Info: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290 • DC – See table Lead s : 99.99% pure silver (.006” thick)

Contextual Info: Model 100NXXAE RoHS Compliant Full Flange Attenuators 100 Watts General Specifications Features: • DC – See table  100 Watts  ALN Ceramic Resistive Element Thick film Substrate ALN ceramic Cover Alumina Ceramic Mounting Flange Copper, Nickel plated per QQ-N-290

Contextual Info: Model RFP-100NXXAF RoHS Compliant Flanged Resistors 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Leads Thick film Aluminum nitride ceramic Alumina ceramic 99% pure silver .005” thick Features: • DC – see chart • 100 Watts

tabella transistor equivalenti

Abstract: transistor equivalenti manuale equivalenti per transistor DELL 3000 1NU 108 DI-22 dell VOSTRO 1015 DISPLAY alfanumerico
Contextual Info: 7.5” TI-83 Manuale d'Istruzioni 10” TI83CALC.DOC TI 83 Inside Cover Bob Fedorisko Revised: 12/03/99 8:31 AM Printed: 12/03/99 8:31 AM Page 1 of 2 TI-83 CALCOLATORE GRAFICO MANUALE Copyright 1996, 2000 di Texas Instruments Incorporated. Importante Texas Instruments non rilascia alcuna garanzia, esplicita o

Contextual Info: 2850-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2851-3 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BSV15-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2856-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2852-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2853-1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)850m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SA571 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

BC327PS

Contextual Info: BC327PS Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC177PA Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC177PAM Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC337CP Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC177A Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.120 h(FE) Max. Current gain.

Contextual Info: 2N5141 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: BC327BP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC177PAK Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)