100MA Search Results

UCC2812

Abstract: IN5B19 UCC3812
Contextual Info: UCC1812 UCC2812 UCC3812 UIMITRODE ADVANCED INFORMATION 12V Boost Regulator FEATURES DESCRIPTION 3V to 5V Input Voltage Range The UCC3812 is a low power boost regulator that takes a 3V to 5V input and outputs a regulated 12V at 100mA. The part uses peak current sensing with a fixed 1|iS off time for the

8 pin ic 3773

Abstract: C 5763 transistor
Contextual Info: ◆Low Power Consumption : 25 A TYP. ◆Dropout Voltage : 30mA @ 60mV : 100mA @ 200mV ◆Maximum Output Current : 150mA (300mA=XC6209 E to H Types) ◆Highly Accurate :±2% (±30mV less than 1.5V) ◆Output Voltage Range : 0.9V ~ 6.0V (50mV Increments)

UC39432

Contextual Info: Precision Adjustable Shunt Regulator UC19431 UC29431 UC39431 UC39431B FEATURES DESCRIPTION • Multiple On-Chip Programmable Reference Voltages The UC39431 is an adjustable shunt voltage regulator with 100mA sink capability. The architecture, comprised of an error amplifier and

TS79L00

Contextual Info: TS79L00 Series 3-Terminal 100mA Negative Voltage Regulator TO-92 SOT-89 Pin Definition: 1. Ground 2. Input 3. Output SOP-8 Pin Definition: 1. Output 8. N/C 2. Input 7. Input 3. Input 6. Input 4. N/C 5. Ground General Description The TS79L00 Series of negative voltage regulators are inexpensive, easy-to-use devices suitable for a multitude

Contextual Info: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA

RF transistor marking IN SOT-89

Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150

Contextual Info: REG101 REG 101 SBVS026D – JULY 2001 – REVISED SEPTEMBER 2005 DMOS 100mA Low-Dropout Regulator FEATURES DESCRIPTION ● NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability ● FAST TRANSIENT RESPONSE

Contextual Info: DTA114T series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC -100mA R1 10kΩ VMT3 EMT3F -50V DTA114TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: EMB51 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter DTr1 and DTr2 VCC -50V IC(MAX.) -100mA R1 22kΩ EMB51 R2 22kΩ (SC-107C) EMT6 l Features 1) Two DTA024E chips in a EMT6 package.

Contextual Info: DTC123TKA Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 2.2kΩ SMT3 50V SOT-346(SC-59) l Features 1) Built-In Biasing Resistor

Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

Contextual Info: DTA013Z series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 1.0kΩ 10kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of

SWT-7MS7P1B10M7QES-0C1-X

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B X WT BK RD OR YL GN BL BN GY PL C D E SPECIFICATIONS Mechanical Life: Contact Resistance: Insulation Resistance: Withstanding: Operating Temp: F 50,000 Make-and-break cycles 20mΩmax. Initial @ 2-4VDC 100mA for both silver and plated contacts

Contextual Info: DTC115T series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 100kΩ VMT3 EMT3 50V DTC115TM (SC-105AA) l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of

Contextual Info: EMD59 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD59 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: DTC144V series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 47kΩ 10kΩ UMT3 SMT3 50V R2 DTC144VUA DTC144VKA SOT-323(SC-70) SOT-346(SC-59)

Contextual Info: DTC124G series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R 22kΩ UMT3 SMT3 50V DTC124GUA SOT-323(SC-70) DTC124GKA SOT-346(SC-59)

Contextual Info: EMD53 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD53 R2 10kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: DTC044E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 47kΩ 47kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 47kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: Datasheet 4-Channel White LED Driver with Integrated FET for up to 40 LEDs BD65D00MUV  ●General Description This IC is white LED driver IC with PWM step-up DC/DC converter that can boost max 41V and current driver that can drive max 100mA. The wide and

NTE1917

Contextual Info: NTE1917 Integrated Circuit Negative 3 Terminal Voltage Regulator, –5V, 100mA Description: The NTE1917 voltage regulator is an inexpensive, easy–to–use device in a TO92 type package suitable for a multitude of applications that require a regulated supply of up to 100mA. This device features internal

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBR2012T220K Features Item Summary 22 H(±10%), 100mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK060347NJ-T Features Item Summary 47nH(±5%), 100mA, 4, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 15000pcs Products characteristics table

Contextual Info: DTA114Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 10kΩ 47kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of