100A 600V SWITCHING DIOD Search Results
100A 600V SWITCHING DIOD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| ICL7662MTV/B |
|
ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS |
|
||
| ICL7660SMTV |
|
ICL7660 - Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8 |
|
||
| LM1578AH/883 |
|
LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) |
|
||
| DG201AK/B |
|
DG201A - 15.0V SPST CMOS Switch |
|
||
| IH5012CDE |
|
IH5012 - SPST, 4 Func, 1 Channel, CDIP16 |
|
100A 600V SWITCHING DIOD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-12A 85K/W | |
DIODE EVP 28Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-12A DIODE EVP 28 | |
DIODE T25Contextual Info: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake |
Original |
CM100RX-12A 85K/W DIODE T25 | |
4193E
Abstract: SIDC42D60E
|
Original |
SIDC42D60E C67047-A4681A001 4193E, 4193E SIDC42D60E | |
SIDC42D60E6Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC42D60E6 600V 100A A This chip is used for: |
Original |
SIDC42D60E6 C67047-A4681A003 4193M, SIDC42D60E6 | |
SIDC42D60E6Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC42D60E6 600V 100A A This chip is used for: |
Original |
SIDC42D60E6 C67047-A4681A003 4193M, SIDC42D60E6 | |
4-400A
Abstract: 4193M
|
Original |
SIDC42D60E6 C67047-A4681sawn 4193M, 4-400A 4193M | |
|
Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC42D60E6 VR 600V IF 100A A This chip is used for: |
Original |
SIDC42D60E6 C67047-A4681sawn 4193M, | |
SIDC42D60E6Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC42D60E6 600V 100A A This chip is used for: |
Original |
SIDC42D60E6 C67047-A4681A003 4193M, SIDC42D60E6 | |
CM100DU-12H
Abstract: C2E1
|
Original |
CM100DU-12H CM100DU-12H C2E1 | |
|
Contextual Info: MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE CM100DU-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack |
Original |
CM100DU-12F 35K/W 70K/W | |
CM100E3U-12FContextual Info: MITSUBISHI IGBT MODULES CM100E3U-12F HIGH POWER SWITCHING USE CM100E3U-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡1-element in a pack |
Original |
CM100E3U-12F CM100E3U-12F | |
CM100RL-12NFContextual Info: MITSUBISHI IGBT MODULES CM100RL-12NF HIGH POWER SWITCHING USE CM100RL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack |
Original |
CM100RL-12NF CM100RL-12NF | |
CM100DU-12FContextual Info: MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE CM100DU-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack |
Original |
CM100DU-12F 35K/W 70K/W CM100DU-12F | |
|
|
|||
|
Contextual Info: MITSUBISHI IGBT MODULES CM100RL-12NF HIGH POWER SWITCHING USE CM100RL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡7-elements in a pack |
Original |
CM100RL-12NF | |
CM100TU-12FContextual Info: MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE CM100TU-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack |
Original |
CM100TU-12F CM100TU-12F | |
CM100TU-12H
Abstract: E80276
|
Original |
CM100TU-12H E80276 E80271 CM100TU-12H E80276 | |
|
Contextual Info: MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE CM100E3U-12H ● IC . 100A ● VCES . 600V ● Insulated Type |
Original |
CM100E3U-12H | |
|
Contextual Info: MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM100BU-12H ● IC . 100A ● VCES . 600V ● Insulated Type |
Original |
CM100BU-12H E80276 E80271 | |
CM100TL-12NF
Abstract: B8P-VH
|
Original |
CM100TL-12NF CM100TL-12NF B8P-VH | |
CM100TU-12FContextual Info: MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE CM100TU-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack |
Original |
CM100TU-12F CM100TU-12F | |
IRR33
Abstract: CM100E3U-12H
|
Original |
CM100E3U-12H IRR33 CM100E3U-12H | |
|
Contextual Info: MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE CM100TU-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack |
Original |
CM100TU-12F | |
CM100RL-12NF
Abstract: CM100RL12
|
Original |
CM100RL-12NF CM100RL-12NF CM100RL12 | |