100HS Search Results

IN914

Abstract: "frequency meter" ic 00MHZ
Contextual Info: CAL C R Y S T A L LA BS INC bfciE D l ß D 1 1 7 b D D D D O b ì 544 ICCL CQMCLOK TTL C lo c k Oscillators Models: □ CCO 100HS 100 ppm □ CCO 50HS (50 ppm ) □ CCO 25HS (25 ppm ) Features: □ 0.500" (L) x ,500"(W) x 0.240"(H)* □ Dual In Line Spacing

100hs 10

Abstract: 2sh5
Contextual Info: CAL C R YS TA L LABS INC bbE » • lflD117b 0 0 0 0 0 7 3 T7S « C C L COMCLOK HCMOS Clock Oscillators Models: □ CCM 100HS 100 ppm □ CCM 50HS (50 ppm ) □ CCM 25HS (25 ppm ) Features: □ 0.500" (L) x ,500"(W) x 0.240"(H)* □ Dual In Line Spacing

SFH 717

Abstract: SFH 291
Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER Package Dimensions in Inches mm SFH400 .291 (7.4) .571 114.5) .492(125) » « -20415.2) J T -193(4.9) t o 0100 (2.54) “ ' i 18^ 751 iw? 0.018(0.45) .106 (2.7) Chip Location .220 f5.B) .208(5.3) N : Cathode

JESD97

Abstract: STSJ100NHS3LL
Contextual Info: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

LT1587-3.3 equivalent

Contextual Info: r r LT1584/LT1585/LT1587 TECHNOLOGY 7A, 4.6A, 3A Low Dropout Fast Response Positive Regulators Adjustable and Fixed w m . F€fflUR€S D€SCRIPTK>n • Fast Transient Response ■ Guaranteed Dropout Voltage at Multiple Currents The LT 1584/LT1585/LT1587 are low dropout threeterminal regulators with 7A, 4.6A and 3A output current

Contextual Info: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses

Contextual Info: irrigl PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation — Increased Programming Throughput

ADP-64F2238-TQ

Abstract: 64f2238 FL817 64f2134 R5F35L83JFF R5F61725 ADP-64F7047-TQ SH7125F sh72543 64f7044
Contextual Info: Socket Adapters and Onboard Programmers PROM Programmers and Socket Adapters Contacts SuperH RISC engine family H8SX family H8S/2600 series H8S/2500 series H8S/2400 series H8S/2300 series H8S/2200 series H8S/2100 series H8/300H series H8/300H Tiny series H8/300H Super Low Power series

Ali 3601

Abstract: 5962-9318710H4X 5962-9318706H4X WS-128K32-120HQ QML-38534 WS-128K32-17HQ
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED G Added device type 11. Added vendor cage 0EU86 for device types 05 99-08-27 Raymond Monnin _ through 09. -

Contextual Info: P re lim in a ry K M 6 8 F S 1 OOOZ, K M 6 8 F R 1 0 0 0 Z F a m i l y CMOS SRAM Documerat Title 12 8K x8 Super Low Powe r and Low Voltage Full C M O S SRAM Data Sheets for 48-CSP Revision History R e v . N o. H Istorv Draft Data R em ark Rev. 0.0 -1 's t edition

hssdc - db9

Abstract: hssdc m 7401
Contextual Info: Fibre Channel: INTER-CABINET DB-9 Plug to DB-9 Plug DB-9 Plug to HSSDC P2 ETHODE P1 Length M AWG Part Number Without Equalisation With Equalisation 30 30 30 28 24 22 - 24 22 22 1.0 3.0 5.0 10.0 15.0 20.0 20.0 25.0 30.0 110-30-100 110-30-300 110-30-500 110-28-1000

JESD97

Abstract: STSJ100NHS3LL
Contextual Info: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V

Contextual Info: inteJ PKiOBflOMÄl 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput

Contextual Info: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 3.3 V or 5 V Read Operation • Very High-Performance Read — 5 V: 60 ns Access Time — 3 V: 110 ns Access Time

kiv 43 n

Contextual Info: 8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V or 5 V Read Operation ■ Very High Performance Read — 5 V: 70 ns Access Time

Contextual Info: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses