1005 7J Search Results

Contextual Info: ADVANCE M T 5L C 1005 256K X 4 SRAM |V|IC=RON 256Kx 4 SRAM SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 15,1 7 , 20, 25, 35 and 45ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply

IR9494

Abstract: IR9494N A1GV IS811 AS5V 18 C40V CR001 AS5V
Contextual Info: - 264 - IR 9494JR 9494N > v u x -f v * > * ? ' o x -r 0 I l i t l b 7 y y X ? OlHSffits 7J (± ± 2 u 0 m A 0 ¡K in y hp - r t f f - / , u -^ » P [h ]S & i/^ a u - n u m i r e , K ia f f iiD S w ir r te 0 «:ih #8r»1lfl iaK (5~ 1005!i> iI® T iIA B

MT5C1005DJ-20

Abstract: 5c1005
Contextual Info: |u iic : r o M T5C1005 256K X 4 SR AM n SRAM 256K x 4 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12,15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

Contextual Info: 10 S t NO. 1.0 Spo°o PART m MATERIAL 0.5 P X K \- 0.25 CKT NO.' mm 1*0.05 (PITCH) U L 9 4 V -0 HEAT RESISTANCE NYLON UL94-V-0 , C0L0R:SEE TABLE WAFER NON-AOCUMULATIVE O A fffi PHOSPHOR BRONZE i / ? A : 1 . 0 A mM I N • TIN 0.6 *0.05 H— — Flz 1^ 11 fF

JST SXH-001T-P0.6 terminal

Abstract: SXH-001T-P06 SXH.001T-P0.6 sm connector b2b power supply jws 600-24 B2B-XH-A JST SXH-001T-P0.6 connector jst connector terminal SXH.001T-P0.6 JWT 4 pin
Contextual Info: LHMBDRA An lnvensys company Input voltage range 85-265 VAC Freqency 47 - 63Hz Inrush current to 200 VAC < 28 A JWS 150, 300, 600 < 50 A DC input 120 - 330 VDC OUTPUT Power (convection cooled) 50 to 600 W Voltage adjustment see table of models (1% model 2V)

SD-14592D2-115

Abstract: SD-14591D2-114 5962-9684408HXC QML-38534 SD14591D2
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 1 2 3 4 5 PREPARED BY

QML-38534

Abstract: MHF 2812D 44t smd 5962-9214401HXC 5962-9214401HXA
Contextual Info: REVISIONS LTR DESCRIPTION D Added RadHard and Class K devices. Added RadHard requirements. Redrew entire document. -sld 97-10-29 K.A. Cottongim E Table I; Changed the min and max limits fo r Radhard levels L,R device type 02 for the following tests +V0 ijT ’ ' vOUT- Changed the

qml-38535

Abstract: CDFP4-F16 GDIP1-T16
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M O-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PREPARED BY Thanh V. Nguyen PMIC N/A S TA N D A R D M ICRO CIRC UIT DR A W IN G THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE

qml-38535

Abstract: HCTS20
Contextual Info: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET REV SHEET 15 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV 8 SHEET PREPARED BY Thanh V. Nguyen

4016B

Abstract: qml-38535 S00470
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS PM iC N/A STANDARD M ICRO CIRC UIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A REV SHEET 1 2 3

QML-38534

Abstract: HS362
Contextual Info: D IS TR IB U TIO N STAT E M E N T A . This Material A p p ro ve d lo r p u b lic re le a s e ; d is tr ib u tio n is u n lim ite d . C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 5962-E098 1. SCOPE 1.1 Scope. This drawing describes device requirements for class H hybrid microcircuits to be

54ACS283

Abstract: qml-38535 GDIP1-T16 ci 7001 smd
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STA TUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A 1 2

HCTS240A

Abstract: qml-38535 qml38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV REV STATUS OF SHEETS SHEET 8 PREPARED BY Thanh V. Nguyen PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

ispLSI 1015

Abstract: qml-38535 1048C isplsi1048c pwl 4700
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 10 PREPARED BY

5962-87702

Abstract: with1111 qml-38535 5962-8770205RA 5962-8770202RA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Made changes to 3.3, 4.2, 4.3.1, and 4.3.2. Made changes to table I. Editorial changes throughout. 90-03-08 M. A. FRYE B Add device type 07. Add vendors CAGEs 1ES66 and 54186. Editorial changes throughout.

qml-38535

Abstract: ACTS161 CDFP4-F16
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 8 PREPARED BY

5962-8979801

Abstract: 5962-8979801YA 5962-8979801XC BUS-65142 BUS-65143 BUS-65144 BUS-65145 CT2542 CT2542-FP QML-38534
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Chanaes in accordance with NOR 5962-R275-94. 94-09-14 K. A. Cottonaim B Chanaes in accordance with NOR 5962-R365-97. 97-06-19 K. A. Cottonaim C Add device types 03, 04, and CAGE code 88379. Correct note 1 in

RH-1750

Abstract: RH1750 qml-38535 PLH23 PHL27
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 18 19 20 21 22 23 24

Contextual Info: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings

CI008

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power

TRANSISTOR sd 346

Contextual Info: SIEMENS BUZ 346 N oi fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 Vds 50 V b 58 A ^DS on Package Ordering Code 0.018 Q TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol Continuous drain current

Fx-991MS

Abstract: Fx-991MS manual calculator casio Fx-991MS Casio calculator FX-570MS Fx-100MS regression FX-115MS casio fx P1003
Contextual Info: fx-95MS fx-100MS fx-115MS fx-912MS fx-570MS fx-991MS User's Guide kfx-912MS owners Please be sure to read the important notice of this manual. E http://world.casio.com/edu_e/ CASIO ELECTRONICS CO., LTD. Unit 6, 1000 North Circular Road, London NW2 7JD, U.K.

Contextual Info: SIEMENS SIPMOS Power MOS Transistor BUZ 92 = 600 V = 3.2 A ^DSIon = 3-0 ß VDS lD • N channel • Enhancem ent mode • A valanche-proof • Package: T O -2 2 0 A B ') Type Ordering code BUZ 92 C 6 70 78-S 1 34 3-A 2 Maximum Ratings Parameter Symbol D rain-so urce voltage

SMD marking DHS

Abstract: qml-38535
Contextual Info: AMD £ 1 REVISIONS LTR DATE DESCRIPTION APPROVED YR-MO-DA REV SHEET R EV SHEET 15 16 17 18 19 20 21 22 1 2 REV STATUS Of SHEETS : \ tV SHEET 3 PREPARED BY CHRISTOPHER A, RAUCH ¡’MIC N/A 5 4 6 7 n 10 12 13 14 DEFENSE ELECTRONICS SUPPLY CENTER UATI U N