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    1000V, NPN Search Results

    1000V, NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet
    TTC5810
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini Datasheet
    TTC019
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini Datasheet

    1000V, NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: r r \ i m > TECHNOLOGY 70MHz, 1000V/[is O p Am p KIÌTUR6S DCSCMPTIOfl • 70MHz Gain-Bandwidth ■ 1000V/|j.s Slew Rate ■ 7.5mA Maximum Supply Current The LT1363 is a high speed, very high slew rate opera­


    OCR Scan     		70MHz, 70MHz LT1363 LT1363 700kHz PDF

    4050 cmos

    Abstract: 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor
    Contextual Info: LRGAT75F100 1000V 75A LRGAT150F100 1000V 150A ZVS THYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power converters up to 80KHz operating frequency and 10KW output power.


    Original     		LRGAT75F100 LRGAT150F100 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 4050 cmos 4011 cmos 4011 c-mos ic cmos 4011 IC 4011 CMOS 4081 logic gate circuit diagram 47k ohm potentiometer Pin Diagram of ic 4081 LM311V 2N2222A npn transistor PDF

    541 transistor

    Abstract: LM311V
    Contextual Info: LRGAT75F100 1000V 75A ADVANCED R ow er LRGAT150F100 1000V 150A T e c h n o l o g y ZVSTHYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power


    OCR Scan     		LRGAT75F100 LRGAT150F100 80KHz 400VAC 6160xx1T2300 DIN46 F-33700 541 transistor LM311V PDF

    Contextual Info: LT1363 70MHz, 1000V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		LT1363 70MHz, 000V/Â 70MHz 350nA LT1364/LT1365 PDF

    Transistor C-1364

    Abstract: LT1364 LT1354 LT1359 LT1360 LT1362 LT1363 LT1365CN
    Contextual Info: LT1364/LT1365 Dual and Quad 70MHz, 1000V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		LT1364/LT1365 70MHz, 70MHz 350nA LT1363 LT1361/LT1362 50MHz, LT1364/LT1365, Transistor C-1364 LT1364 LT1354 LT1359 LT1360 LT1362 LT1363 LT1365CN PDF

    Transistor C-1364

    Contextual Info: LT1364/LT1365 Dual and Quad 70MHz, 1000V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		LT1364/LT1365 70MHz, 000V/Â 70MHz 350nA LT1363 Transistor C-1364 PDF

    Transistor C-1364

    Abstract: LT1365CN LT1364 LT1364CS8 LT1354 LT1359 LT1360 LT1362 LT1363 LT1364CN8
    Contextual Info: LT1364/LT1365 Dual and Quad 70MHz, 1000V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain-Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current per Amplifier Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		LT1364/LT1365 70MHz, 70MHz 350nA Transistor C-1364 LT1365CN LT1364 LT1364CS8 LT1354 LT1359 LT1360 LT1362 LT1363 LT1364CN8 PDF

    1363

    Abstract: C 1363 Ca LT1354 LT1359 LT1360 LT1363 LT1363CN8
    Contextual Info: LT1363 70MHz, 1000V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		LT1363 70MHz, 70MHz 350nA LT1364/LT1365 LT1360 50MHz, LT1363, 1363 C 1363 Ca LT1354 LT1359 LT1360 LT1363 LT1363CN8 PDF

    transistor 1363

    Abstract: LT1354 LT1359 LT1360 LT1363 LT1363CN8
    Contextual Info: LT1363 70MHz, 1000V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 70MHz Gain-Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		LT1363 70MHz, 70MHz 350nA transistor 1363 LT1354 LT1359 LT1360 LT1363 LT1363CN8 PDF

    2SC5264

    Abstract: 2SC5264LS 2079d
    Contextual Info: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		ENN5287A 2SC5264LS 2079D 2SC5264] O-220FI 2SC5264 2SC5264LS 2079d PDF

    ta1238

    Abstract: TA-1238 2SC5304 2SC5304LS
    Contextual Info: Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		ENN5883A 2SC5304LS 2079D 2SC5304] O-220FI ta1238 TA-1238 2SC5304 2SC5304LS PDF

    ta1238

    Abstract: TA-1238 2SC5304 EN5883
    Contextual Info: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		EN5883 2SC5304 2079B 2SC5304] O-220FI ta1238 TA-1238 2SC5304 EN5883 PDF

    2069B

    Abstract: 2SC5420
    Contextual Info: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		EN5762 2SC5420 2069B 2SC5420] 2069B 2SC5420 PDF

    d 5287

    Abstract: 2SC5264
    Contextual Info: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		ENN5287 2SC5264 2079C 2SC5264] O-220FI-LS 10Ltd. d 5287 2SC5264 PDF

    NPN Transistor VCEO 1000V

    Abstract: 2SC5420 1000V 20A transistor
    Contextual Info: Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . • High reliability (Adoption of HVP process). • Adoption of MBIT process.


    Original     		EN5762 2SC5420 2069B-SMP-FD 2SC5420] NPN Transistor VCEO 1000V 2SC5420 1000V 20A transistor PDF

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V PDF

    2N5015S

    Contextual Info: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015S O205AD) 10/20m 1-Aug-02 2N5015S PDF

    Contextual Info: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015SX O205AD) 10/2Parameter 10/20m 17-Jul-02 PDF

    2SC2688

    Abstract: 2SC2688L NPN Transistor VCEO 1000V
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K 2SC2688L NPN Transistor VCEO 1000V PDF

    Contextual Info: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015S O205AD) 10/20Parameter 10/20m 17-Jul-02 PDF

    Contextual Info: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015 O205AD) 10/25mParameter 10/25m 17-Jul-02 PDF

    Contextual Info: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015 O205AD) 10/25m 19-Jun-02 PDF

    Contextual Info: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015X O205AD) 10/20Parameter 10/20m 17-Jul-02 PDF

    Contextual Info: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		2N5015S O205AD) 10/20m 19-Jun-02 PDF