1000UMX1000UM Search Results
1000UMX1000UM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RLT-BNP1000-02Contextual Info: RLT-BNP1000-02 TECHNICAL DATA High Power LED InGaN FEATURES: Growth Technique: MOCVD Substrate: Sapphire 0001 Structure: InGaN MQW Chip size: 1000umx1000um ABSOLUTE MAXIMUM RATINGS (at TA=25℃) : Parameter Max. Unit IF 500 mA Pulse Forward Current IFP* |
Original |
RLT-BNP1000-02 1000umà 1000um 350mA RLT-BNP1000-02 | |
RLT-WNP1000-02Contextual Info: RLT-WNP1000-02 TECHNICAL DATA High Power LED InGaN FEATURES: Growth Technique: MOCVD Substrate: Sapphire 0001 Structure: InGaN MQW Chip size: 1000umx1000um ABSOLUTE MAXIMUM RATINGS (at TA=25℃) : Parameter Max. Unit IF 500 mA Pulse Forward Current IFP* |
Original |
RLT-WNP1000-02 1000umà 1000um 350mA RLT-WNP1000-02 |