1000SI Search Results

Contextual Info: B80C1500/1000SI Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.2 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage190 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)5.0

B80C1500/1000

Contextual Info: B80C1500/1000SIC Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.2 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80¥ V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)5.0

Contextual Info: Gleichrichterdioden-Brücken Rectifier diode bridges Ponts redresseurs Typ V rrm V rms I fsm Type V B 40.C, 800 SI, „ Ä ä P D - '' B 80 Ç 800 Si, .D, .SD ^ V B f » C £00 Si, .D, .SD * B 380 C 800 Si, .D. .SD : 40 B 380 C 1000 Si 80 125 R /C

LEM LT 1000-SI

Abstract: LT 1000-SI lem current lt 100 Lem LT 1000 Lem LT 200
Contextual Info: IPN Current Transducer LT 1000-SI = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

SAMWHA RG

Abstract: SAMWHA rx samwha capacitor rz
Contextual Info: Aluminum Electrolytic Capacitors 5. Do not allow any higher ripple current than rated to flow through a capacitor. 5. ?-|nHA|Ej0| □teJAis. If any ripple current higher than the rated value are to flow through a capacitor, excessive heat will be generated

SD-1440-4

Abstract: SPX1878 sdp 8403 SD.3443-3 Sensor spx 6 pin sdp 8403 A sd 1410-4 SD.5443-3 spx 2762
Contextual Info: Phototransistors SILICON Light current Type W at Specified irradiance »[&] Dark current (H-0) io(nA) at Collector Specified breakdown Collector (lc = 100 uA) emitter voltage BVcEo(vOltS) VCE(volts) Emitter breakdown (lc = 100 mA) BVECO(volts) Light current

LEM module application note

Abstract: LEM Components lem module lem module 50 1000-SI lem 50
Contextual Info: Current Transducer LB 1000-SI/SP2 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

LEM LT 1000-SI

Abstract: LT 1000-SI LT 1000 LEM Components Lem LT 1000 lt 1000 si
Contextual Info: Current Transducer LT 1000-SI IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

7094

Abstract: 175MC
Contextual Info: 7094 Beam Power Tube FORCED-AIR COOLED AT MAXIMUM RATINGS 500 WATTS CW INPUT IC A S UP TO 60 Me 335 WATTS CW INPUT (IC A S ) UP TO 17 5 Me GENERAL DATA E le c t r ic a l: H eater, f o r U n ip o t e n t ia l Cathode: V o )ta g e (AC o r DC) .

Contextual Info: Current Transducer LTC 1000-SF/SP4 For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit and the secondary circuit. Electrical data Features Primary nominal current rms Primary current, measuring range @ ± 24 V

lem current

Abstract: LEM Components
Contextual Info: Current Transducer LB 1000-SI/SP2 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

SD-1440-4

Abstract: SD.5443-3
Contextual Info: Phototransistors SILICON Light current Type W at Specified irradiance »[&] Dark current at (H-0) io(nA) Specified Collector emitter voltage VCE(volts) Collector breakdown (lc = 100 uA) BVcEo(vOltS) Emitter breakdown (lc = 100 mA) BVECO(volts) rise time