1000-1 POWER MODULE Search Results

NX7526BF-AA

Abstract: NX7526BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well

NX7561JB-BC

Abstract: NX7561JB-BC-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP

nec laser diode OTDR

Abstract: NX7661JB-BC NX7661JB-BC-AZ
Contextual Info: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP

Contextual Info: < IGBT MODULES > CM1000DUC-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .….… 1 0 0 0 A Collector-emitter voltage VCES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM150RXL-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .….… 150A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM900DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .….… 900A Collector-emitter voltage VCES .… 1 2 0 0 V Maximum junction temperature T j m a x .

GPD-201

Abstract: GPD-405 GPD-403 GPD-402 GPD-120 GPD-401 GPD-404 GPD-202 GPD-321 GPD-331
Contextual Info: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions IF/RF Low Cost Cascadable Modules Selection Guide GPD Series GPM Series Features Description Case Types • Small Size The GPD and GPM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are

Contextual Info: LD41_60 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: OUTLINE DRAWING Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)

Contextual Info: AC/DC Power Modules TMP & TMPM Series, 4 to 60 Watt CB Features ◆ Ultra compact, low profile plastic casing ◆ Fully encapsulated pollution/dust ◆ Single-, dual- and triple output models ◆ 2 package versions: UL 60950-1 UL 508 - Screw terminal block for chassis mount

E78996 scr

Abstract: S2000 series scr vskt thyristor TT 45 N 1200 3 phase BUSBAR
Contextual Info: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

KD421K15

Contextual Info: m/VEREX KD421K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: — R — l” H . f ia,i " • 5 n n c The Powerex Dual Darlington

APT0502

Abstract: APT0601 APTGT600DU60G
Contextual Info: APTGT600DU60G VCES = 600V IC = 600A* @ Tc = 80°C Dual common source Trench + Field Stop IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 Q2 G1 G2 E1 E2 E C1 E C2 E1 Benefits • Stable temperature behavior

102 TRANSISTOR

Abstract: KD221 KD221K03 VC80 X1000
Contextual Info: m M B E X KD221K03 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D d r lin Q t O H Transistor Module 30 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

NX7529BB-AA

Abstract: NX7529BB-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7529BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 20 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 40 mW at IFP = 400 mA, NEC's NX7529BB-AA is a 1550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber. This module is specified to operate

conduction angle diode AC series

Abstract: 5G13
Contextual Info: VSK.430.PbF Series Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor SUPER MAGN-A-PAK Power Modules , 430 A FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic

95313

Abstract: T40hf IFM 204
Contextual Info: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly

Contextual Info: PN41_11 TM POW-R-BLOK Common Anode Dual Diode Module 1100 Amperes / Up to 2600 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

Contextual Info: CPV364M4FPbF Vishay High Power Products IGBT SIP Module Fast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses RoHS • HEXFRED soft ultrafast diodes COMPLIANT • Optimized for medium speed 1 to 10 kHz

APT0502

Abstract: APT0601 APTGT600SK60G chopper control igbt buck
Contextual Info: APTGT600SK60G VCES = 600V IC = 600A* @ Tc = 80°C Buck chopper Trench + Field Stop IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies VBUS Q1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)

Contextual Info: 2-Pack IGBT 1400V 150A 2MBI 150PC-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)