1000-1 POWER MODULE Search Results

diode k6

Abstract: BC POWER MODULE
Contextual Info: BY 500-50.BY 500-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,1 Axial lead diode Fast silicon rectifier diodes BY 500-50.BY 500-1000 8  9  2  9  9

Contextual Info: SINGLE POLE, DOUBLE THROW DROP-IN MODULES WITH DRIVERS ᮣ 6027 6028 TYPE SP2T R SP2T R FREQ RANGE GHZ LOSS dB ISO dB VSWR .5-2 1-12 0.8 1.3 60 50 1.5:1 2.0:1 SWITCH SPEED ns RF POWER dBm DC SUPPLY Volts 1000 1000 20 20 +5,-5 +5,-5 General purpose switches

24v 12v 10A regulator

Abstract: 12v 10A regulator NMX-1003-0512 NMX-1004-1203 NMX-1004-1205 NMX-1004-1212 NMX-1004-1224
Contextual Info: 1000 WATTS POWER FACTOR CORRECTED MULTIPLE OUTPUT, FORCED CURRENT SHARING NMX-1000 Featuring: • Forced current sharing for N +1 redundancy • Remote sense on outputs #1, 2 and 3 • “Zero wire” slope program current sharing on outputs #2 and 3 for redundancy

siemens igbt BSM 25 gb

Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 120 siemens igbt BSM 10 siemens igbt BSM 150 gb 100 d siemens igbt BSM 50 gb 100 d siemens igbt BSM 100 gb SIS00025 siemens igbt BSM 25 gb 100 d siemens igbt BSM 75 gb 100
Contextual Info: Technical Information SIEM ENS 1000 V IGBT Power Modules Collector current Ic at Tc = 80 C Single switch Half-bridge VCE = 1000 V Chopper 3-phase full-bridge 5 A" - - - BSM 05 GD 100 D2> 10 A 1 - - - BSM 10 GD 100 D2) 15 A - - - BSM 1 5 G D 100 D 25 A - BSM 25 GB 100 D

Contextual Info: 1000 BASE –T DUAL/QUAD PORT MAGNETICS MODULES FOR ASSIST POE POWER LINE BOTHHAND USA Page 1 of 13 z Designed for Ethernet 1000 BASE-T, full Quad port applications. z Supports 16 pairs of category 5 UTP cable. z Cable interface for isolation and low common mode emissions.

1000-1 POWER MODULE

Abstract: CH-4452 CR2477N renata 1000-1
Contextual Info: Power Modules Power Modules Horizontal Versions for Soldering With decoupling diodes RENATA No. 1000-1 Nominal capacity mAh Nominal voltage (V) 950 3 Operating temperature range: Self-discharge rate: Specifications - module housings: - soldering contacts:

renata 1000-1

Abstract: Renata SA 1000-1 POWER MODULE 1000-1 diodes
Contextual Info: Power Modules Power Modules Horizontal Versions for Soldering With decoupling diodes RENATA No. 1000-1 Nominal capacity mAh Nominal voltage (V) 950 3 Operating temperature range: Self-discharge rate: Specifications - module housings: - soldering contacts:

CR2477N

Abstract: renata 1000-0 CR2477-N renata 1000-1 700035 1000-0 renata 1000-1 RENATA CR2032 CH-4452
Contextual Info: Power Modules Power Modules Horizontal Versions for Soldering With decoupling diodes RENATA Part name 1000-1 RENATA Part number 700035 Nominal Nominal capacity voltage V (mAh) 950 Operating temperature range: Self-discharge rate: Specifications - module housings:

SDP-UNIV-44

Abstract: PAC-PLCC68 SM44P EPU84P PC84 XC7200 ALL-07 PROGRAMMER PA84 PA44-48U AD-XC7272-PLCC-84
Contextual Info: All-03A All-07 Micromaster 1000/E Speedmaster 1000/E Micromaster LV Speedmaster LV Hi-Lo Systems Research ICE Technology Ltd. ROM 9000 SYSTEM 2000 PINMASTER 48 EMP20 Eclipse Expert Optima Multisyte T-10 UDP T-10 ULC POWER-100 EXPRO-60/80 TURPRO-1 TURPRO-1 F\X

astec vs3

Abstract: ASTEC VS1 CSA22 VS1-L4-00
Contextual Info: VS SERIES 1000-2500 Watts VS Series Total Power 1000 - 2500 Watts Input Voltages 85 - 265 VAC, 1 & 3 phase # of Outputs 1 - 12 Size 5” x 5” x 11” VS1, VS6 5” x 8” x 11” VS3, VS8 VS1 - B2 - H522 - 00 600 W (500 W) . . . . . . . . . . . . . . . . . . 1100 W total

diode BA 159

Contextual Info: BA 157.BA 159 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V

Contextual Info: VBO88-12NO7 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 90 A I FSM = 1000 A 1~ Rectifier Bridge Part number VBO88-12NO7 EG 1 ~ K10 ~ L9 PS 18 Features / Advantages: Applications: Package: ECO-PAC2 ● Package with DCB ceramic ● Improved temperature and power cycling

VBO88-16NO7

Contextual Info: VBO88-16NO7 3~ 1~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 90 A I FSM = 1000 A 1~ Rectifier Bridge Part number VBO88-16NO7 EG 1 ~ K10 ~ L9 PS 18 Features / Advantages: Applications: Package: ECO-PAC2 ● Package with DCB ceramic ● Improved temperature and power cycling

Contextual Info: VBO88-08NO7 3~ 1~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 90 A I FSM = 1000 A 1~ Rectifier Bridge Part number VBO88-08NO7 EG 1 ~ K10 ~ L9 PS 18 Features / Advantages: Applications: Package: ECO-PAC2 ● Package with DCB ceramic ● Improved temperature and power cycling

AMT-A0168

Contextual Info: AMT-A0168 900 MHz to 1000 MHz High Linearity Power Amplifier with LNA 1dB NF Data Sheet Features • • • • • • • • • • 900 MHz to 1000 MHz Frequency Range P1dB > +34 dBm Typical Gain 36 dB Typical Gain Flatness < ± 1 dB Typical ± 2 max

VIPer16 applications

Abstract: schematic diagram ac-dc inverter VIPer16 Power INVERTER schematic circuit STEVAL-IHM025V1 STGIPL14K60 inverter igbt circuit diagrams in bridge regenerative brake igbt inverter schematic induction schematic diagram motor control
Contextual Info: STEVAL-IHM025V1 1 kW 3-phase motor control demonstration board featuring the IGBT intelligent power module STGIPL14K60 Data brief Features • Min. input voltage: 125 VDC or 90 VAC ■ Max. input voltage: 400 VDC or 285 VAC ■ Max. output power for motors up to 1000 W

amplifier circuit diagram 1000 watt

Contextual Info: HMC-C012 v03.1007 AMPLIFIERS 1 10 WATT POWER AMPLIFIER MODULE, 400 - 1000 MHz D E U N I T N O T C C S U I D D O PR Features P1dB Output Power: 10 Watts Gain: 40 dB Output IP3: +54 dBm Single Positive Supply: +12V Thermally Compensated and Protected TTL DC Power Enable

C67076-A1053-A2

Contextual Info: SIMOPAC Module BSM 191 F VDS = 1000 V ID = 28 A R DS on = 0.42 Ω ● ● ● ● ● ● ● Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code

schematic diagram welding device

Abstract: cascode mosfet switching STE50DE100 ic 1240 equivalent ics ultra low Ciss
Contextual Info: STE50DE100 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE Figure 1: Package Table 1: General Features n n n n n VCS ON IC RCS(ON) 1.3 V 50 A 0.026 W HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON

MA47221

Contextual Info: A߀ßm_ MA47200 Series Stripline PIN Diode Switch Modules Features • BROADBAND 50 OHM DESIGNS THROUGH X BAND £è 114 ■ CIRCUIT CHARACTERIZED « ■ HIGH POWER CAPABILITY ' I I 1 144 ■ VOLTAGE RATINGS TO 1000 VOLTS 1 ■ FAST SWITCHING SPEED TO 10

Contextual Info: SINGLE POLE, SINGLE THROW DROP-IN MODULES ᮣ ELECTRICAL CHARACTERISTICS PART # 6005 6006 6007 TYPE SPST N SPST R SPST R FREQ RANGE GHZ LOSS dB ISO dB VSWR 9-10 1-14 .5-4 1.2 1.0 0.8 40 30 50 1.5:1 1.8:1 1.5:1 SWITCH SPEED ns RF POWER dBm DC SUPPLY 1000 50

microwave radio

Contextual Info: SINGLE POLE, DOUBLE THROW COMMERCIAL MICROSTRIP MODULES ᮣ ELECTRICAL CHARACTERISTICS PART # 6912 6913 TYPE SP2T R SP2T R FREQ RANGE GHZ LOSS dB 9-10.1 .01-16 1.1 1.5 ISO dB 50 50 VSWR 1.5:1 1.8:1 SWITCH SPEED ns RF POWER dBm DC SUPPLY Volts 1000 20 40 25

NX7361JB

Abstract: NX7361JB-BA
Contextual Info: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1310 nm OTDR APPLICATION NX7361JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% The NX7361JB is a 1310 nm developed strained Multiple

PTC2011

Abstract: diiode darlington NPN 600V 50a transistor
Contextual Info: Series PTC 2010, PTC 2011 KPN Silicon Power Darlington Transistors 30 Amperes • 1000 Volts FEATURES • Isolated Collectors • High Voltage Rating - 1 0 0 0 Volts • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • High Current Switching Power Supplies