1000 WATT AMPLIFIER CIRCUIT DIAGRAM Search Results

AH116

Abstract: AH116-S8 AH116-S8G AH116-S8PCB900 ECP052 ECP052G amplifier circuit diagram 10000 watt WJ COMMUNICATIONS
Contextual Info: AH116 / ECP052G 1/2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 800 – 1000 MHz • +28 dBm P1dB • +43 dBm Output IP3 • 17.5 dB Gain @ 900 MHz • Single Positive Supply +5 V Functional Diagram

c1089

Contextual Info: EC1089 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram GND • • • • • • 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package

SCG015

Abstract: SCG015B SCG015B-G SCG015B-PCB1960 SCG015B-PCB2140
Contextual Info: SCG015 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Description Functional Diagram The SCG015 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve performance over a broad range with +41

AH312-S8PCB900

Abstract: ECP200G AH312 AH312-S8 AH312-S8G AH312-S8PCB1960 AH312-S8PCB2140 ECP200 IS-95A
Contextual Info: AH312 / ECP200G 2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram The AH312 / ECP200 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for

3A001

Abstract: Ka-band free circuit diagram of rf id
Contextual Info: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output

TGA2575

Contextual Info: TGA2575 Ka-Band 3 Watt Power Amplifier Applications •  Military Radar Communications Product Features        TGA2575 Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 35.5 dBm Psat PAE: 22% Gain: 19 dB Return Loss: 12 dB

AH312G

Abstract: AH312 AH312-S8 AH312-S8G AH312-S8PCB1960 AH312-S8PCB2140 AH312-S8PCB900
Contextual Info: AH312 The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Information Product Description • 400 – 2300 MHz Functional Diagram The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is

Contextual Info: EC1089 InGaP HBT Gain Block Product Features • • • • • • Functional Diagram Product Description GND 10 – 2500 MHz +24 dBm P1dB +41 dBm OIP3 15.5 dB Gain at 900 MHz 12.2 dB Gain at 1900 MHz Lead-free/Green/RoHS compliant SOT-89 Package Applications

Contextual Info: TGA4539-SM Ka-Band 1 Watt Power Amplifier Applications Point-to-Point Radio Ka-Band VSAT Ground Terminal Point-to-Multipoint Communications QFN 5x5 mm 20L Product Features Functional Block Diagram Frequency Range: 28 – 30 GHz Power: 30.5 dBm Psat, 30 dBm P1dB

J263

Abstract: RO3203
Contextual Info: TGA4539-SM Ka-Band 1 Watt Power Amplifier Applications • • • Point-to-Point Radio Ka-Band VSAT Ground Terminal Point-to-Multipoint Communications QFN 5x5 mm 20L Product Features • • • • • Functional Block Diagram Frequency Range: 28 – 30 GHz

free circuit diagram of rf id

Contextual Info: TGA2502-GSG 3.6 Watt 13-16 GHz Power Amplifier Applications •   Ku-band communications Ku-band VSAT Point-to-point radio Product Features     Functional Block Diagram Frequency Range: 13 - 16 GHz Saturated Output Power: 35.6 dBm

RO3203

Contextual Info: TGA4539-SM Ka-Band 1 Watt Power Amplifier Applications • • • Point-to-Point Radio Ka-Band VSAT Ground Terminal Point-to-Multipoint Communications QFN 5x5 mm 20L 20 Product Features • • • • • Functional Block Diagram Frequency Range: 28 – 30 GHz

1990 1142

Contextual Info: AH212 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description • 1800 – 2400 MHz Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance

B0921

Contextual Info: TGA4539-SM Ka-Band 1 Watt Power Amplifier Applications Point-to-Point Radio Ka-Band VSAT Ground Terminal Point-to-Multipoint Communications QFN 5x5 mm 20L Product Features Functional Block Diagram Frequency Range: 28 – 30 GHz Power: 30.5 dBm Psat, 30 dBm P1dB

AH110G

Contextual Info: AH110 0.2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram The AH110 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve performance over a broad range with +39

AD746JR

Contextual Info: a FEATURES AC PERFORMANCE 500 ns Settling to 0.01% for 10 V Step 75 V/ ␮s Slew Rate 0.0001% Total Harmonic Distortion THD 13 MHz Gain Bandwidth Internal Compensation for Gains of +2 or Greater Dual Precision, 500 ns Settling, BiFET Op Amp AD746 CONNECTION DIAGRAM

AH117

Abstract: JESD22-A114 J-STD-020A 8948
Contextual Info: AH117 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description • 400 – 2200 MHz Functional Diagram The AH117 is a high gain, high dynamic range driver amplifier in a low-cost surface mount package. The

Contextual Info: A N A LO G D E V IC E S Quad Picoampere Input Current Bipolar Op Amp AD704 FEATURES HIGH DC PRECISION 75 fiV max Offset Voltage 1 iV/°C max Offset Voltage Drift 150 pA max Input Bias Current 0.2 pA/°C typical lB Drift CONNECTION DIAGRAMS 14-Pin Plastic DIP (N

AD704

Abstract: AD705 AD706 EIA-481A LT1024 OP07 55 RP 3002
Contextual Info: a Dual Picoampere Input Current Bipolar Op Amp AD706 FEATURES CONNECTION DIAGRAM HIGH DC PRECISION 50 µV max Offset Voltage 0.6 µV/°C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages LOW NOISE

Contextual Info: Ultralow Noise, High Speed, BiFET Op Amp AD745 ANALOG DEVICES □ CONNECTION DIAGRAMS 8-Pin Plastic Mini-DIP N & 16-Pin SOIC (R) Package FEATURES ULTRALOW NOISE PERFORMANCE 2.9 n V /V H z at 10 kHz 0.38 (xV p -p , 0.1 Hz to 10 Hz 6.9 fA /V H z Current Noise at 1 kHz

FP21G

Abstract: MARKING CODE 51 5 fet sot-89 FP2189 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89
Contextual Info: FP2189 1 - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain

pin configuration of ic TL084

Abstract: Instrumentation Amplifier IC with tl084 AD713 band pass TL074 top octave generator TL084 DATA SHEET AD711 AD712 LF347 TL084
Contextual Info: a Quad Precision, Low Cost, High Speed, BiFET Op Amp AD713 FEATURES Enhanced Replacement for LF347 and TL084 CONNECTION DIAGRAMS AC PERFORMANCE 1 ms Settling to 0.01% for 10 V Step 20 V/ms Slew Rate 0.0003% Total Harmonic Distortion THD 4 MHz Unity Gain Bandwidth

IC u706

Abstract: 706AN u706 k2499
Contextual Info: ANALOG DEVICES dial Rcoanpere Input Current BpdarCjbArp /Ü706 FEATURE CONNECTION DIAGRAM HIGH DC PRECISION 50 p,V max Offset V oltage 0.6 |xV/°C max Offset Drift 110 pA max Input Bias Current Plastic Mini-DIP N Cerdip (Q) and Plastic SOIC (R) Packages

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET