1000 WATT Search Results

SPD-5-1000

Abstract: A0712
Contextual Info: 4-WAY POWER DIVIDER SURFACE MOUNT MODEL SPD-5-1000 WIDE BANDWIDTH 5 - 1000 MHz SPECIFICATIONS: Rev. A 07/12/06 Operating Frequency: Insertion Loss: (dB) 5-50 MHz 50-500 MHz 500-1000 MHz Isolation: (dB) 5-50 MHz 50-500 MHz 500-1000 MHz 5 - 1000 MHz (Typ) / (Max)

1002

Abstract: SDL-100
Contextual Info: - PROPRIETARY INFORMATION - 2-WAY POWER DIVIDER MODEL SDL-100 WIDE BANDWIDTH 2 - 1000 MHz SPECIFICATIONS Rev A 08/06/09 Operating Frequency: Insertion Loss: (dB) 2-20 MHz 20-500 MHz 500-1000 MHz Isolation: (dB) 2-20 MHz 20-500 MHz 500-1000 MHz 2 - 1000 MHz

Contextual Info: POWER DIVIDERS, 3 WAY - 0° Frequency Range MHz Insertion Loss (dB) max. 0.5 1.2 1.0 1.2 1.5 1.0 0.8 1.5 1.5 1-200 1-500 5-500 10-1000 20-1000 100-1000 800-1000 50-1500 800-1500 Isolation (dB) min. Amplitude Balance (dB) max. Phase Balance (Deg) max. 25

1000 watt mosfet power amplifier

Abstract: MOSFET 20 NE 50 Z 80021 SLD-1000 SLD-1083CZ 1000 watts amplifier schematic diagram with part
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for

PDS-20-600

Contextual Info: PDS-20-600 0 POWER DIVIDERS / COMBINERS 50 to 1000 MHz / 2-Way / Low Insertion Loss / Excellent Phase & Ampli. Bal./ Broadband / PC Hdr PRINCIPAL SPECIFICATIONS Model Number PDS-20-600 Frequency Freq., Range, Perform., MHz MHz 50 - 1000 50 - 150 150 - 1000

DQS-100-1000

Abstract: C0804
Contextual Info: 90º HYBRID SURFACE MOUNT MODEL: DQS-100-1000 100 - 1000 MHz FREQUENCY BANDWIDTH FEATURES: ► Ultra-Wide Bandwidth 10:1 ► Small Package Size, Surface Mount ►Lead Free REL-PRO Technology SPECIFICATIONS (Rev. C 08/04/06) Frequency Package # 100 - 1000 MHz

Contextual Info: TAP1000 Series 1000 Watt Heat Sinkable Planar 0.193" 4.89mm ø0.172" (4.37mm) 0.689" (17.50mm) ø10-32 The TAP1000 Series delivers 1000 watts of continuous power when properly mounted to a liquid cooled heat sink (based on 70°C ambient temperature) Applications include power

Contextual Info: Click Package To View Outline Drawing MIXERS MIXERS TRIPLE-BALANCED TRIPLE-BALANCED LO = +23 dBm SUPER HIGH DYNAMIC RANGE SURFACE MOUNT FREQUENCY RANGE MHz CONVERSION LOSS (dB) XMB RF/LO 5 - 1000 25 - 1800 750 - 2500 IF 5 - 1000 25 - 1000 50 - 880 133 TYP/MAX

Contextual Info: LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts LD0810-50 LD0810-50 Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V Features • • • • • • • Outline Drawing New LDMOS Technology Broadband Class AB Operation

97942

Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

C 33725

Abstract: 4501 ic 6483 10A015 080620 144089 040196 BVces 33970 34-41-50
Contextual Info: 10A015 1.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

SM0810-51LD

Abstract: rf amplifier 100w
Contextual Info: Model SM0810-51LD 800-1000 MHz 120 Watt Power Amplifier The SM0810-51LD is an 800-1000 MHz* LDMOS amplifier primarily designed for ECM applications. The linear gain is 45 dB, and the unit operates over an extended temperature range of -30 to +85 ºC. Features

Contextual Info: POWER DIVIDERS, 2 WAY - 0° PIN PACKAGES Frequency Range MHz Insertion Loss (dB) max. 0.5 0.7 0.8 0.7 0.6 1.2 1.0 1.0 1.7 1.5 0.5-100 0.5-300 1-500 5-500 100-500 5-1000 10-1000 20-1000 5-1500 20-1500 Isolation (dB) min. Amplitude Balance (dB) max. Phase

ic an 7591

Abstract: ic 7483 023243 TRANSISTOR 1a5 7483 IC an 7591 44222 63-8687 74718 5310
Contextual Info: 1A5/1A5A 0.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 1A5/1A5A is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold

IXGD30N60

Abstract: IXGD10N60
Contextual Info: PACKAGE TO-257 TO-254 TO-258 'c »I VOLTS AMPS VCE <sat VOLTS n sec PO WATTS CHIP 10 2.5 300 50 IXGD10N60 SNG30610A 600 600 10 3.0 300 50 IXGD10N60A SMG301010 1000 10 3.5 800 50 1XGD10N100 SNG301010A 1000 10 4.0 500 50 IXGD10N100A DEVICE TYPE b v ces •c

stf460

Abstract: SNF60910 SNF61011
Contextual Info: a pow erhouse: MOSFETS N C H A N N E L POW ER M O SFETS PACKAGE DEVICE TYPE BVds S VOLTS T 0 204 TO-3 I •d AMPS r DS(ON) @ 0.5 'D OHMS Qg nc CIS pf FV W ATTS SNF61011A 1000 12.0 1.1 155 4500 30C SNF61011 1000 9.5 1.1 70 2950 300 SNF61013 1000 8.5 1.3 70

J307

Abstract: 0405-1000M J293
Contextual Info: 0405-1000M R3 . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty

1014-6A

Contextual Info: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed

55LT

Contextual Info: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

2 watt rf transistor

Abstract: 10 watt power transistor 100 watt transistor transistor Common Base amplifier RF TRANSISTOR 10 WATT common base transistor
Contextual Info: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

FNP600

Abstract: FNP600-12 FNP850-12 HZZ02002G HZZ01222
Contextual Info: FNP600/850/1000 AC-DC Front-Ends & FNR-5-12/FNR-5-48 Power Shelves Data Sheet 600-to-5000-Watt Front-End Power Solutions Features • RoHS lead free solder and lead solder exempted 600, 850, or 1000 Watts I2C Management Software: All FNP front-ends can be controlled via Power-One's GUI-driven I2C

IRFC44

Abstract: STFM150 shf206 IRFC460 IRFC9140 IRFC9240 IRFC340 IRFC440
Contextual Info: MOSFETS PACKAGE TO-254 RDS ON •d @ 0.5 *D CONTINUOUS >D VOLTS OHMS AMP WATTS CHIP 100 200 200 400 400 400 500 500 500 500 600 600 600 800 800 900 900 1000 1000 0.065 0.2 0.1 0.56 0.3 0,2 0.85 0.4 0.27 0.23 0.7 0.6 0.36 1.2 1.8 2.0 1.0 2.4 1.1 25.0 15.0

Contextual Info: QHP-2N Series 90 POWER DIVIDERS / COMBINERS 1 to 1000 MHz / 10% Bandwidth Standard / Low Insertion loss / Lumped Element Circuits / Meri-Pac PRINCIPAL SPECIFICATIONS Model Number QHP-2N-*B GENERAL SPECIFICATIONS Center Frequency,fo Usable Bandwidth,MHz 1 - 1000 MHz