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1003A230XB
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Semitron
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3 TERMINAL MINI ARRESTER SERIES TOTALLY NON-RADIOACTIVE |
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18.53KB |
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1003A260XB
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Semitron
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3 TERMINAL MINI ARRESTER SERIES TOTALLY NON-RADIOACTIVE |
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18.53KB |
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1003A350XB
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Semitron
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3 TERMINAL MINI ARRESTER SERIES TOTALLY NON-RADIOACTIVE |
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18.53KB |
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JMSH1003AGWQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V 2.8mΩ N-Ch Power MOSFET in PDFN5x6-8L-W package with 178A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSH1003ATLQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel TOLL power MOSFET with 2.7 mΩ typical RDS(ON) at 10V VGS, 228A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications in a PowerJE10x12 package. |
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JMSH1003ATL
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in PowerJE®10x12 package with 2.7 mΩ RDS(ON) at 10V VGS, 228A continuous drain current, and low gate charge, suitable for high-efficiency power switching applications. |
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G1003A
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AK Semiconductor
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G1003A is a MOSFET in SOT23-3L package with 100V drain-source voltage, 5A continuous drain current, 3W power dissipation, and low RDS(ON) of 100 mΩ at 10V gate voltage, suitable for power switching and high-frequency applications. |
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JMSH1003AE7Q
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Jiangsu JieJie Microelectronics Co Ltd
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100 V N-Ch Power MOSFET in TO-263-7L package with 2.8 mΩ RDS(ON) at 10 V VGS, 196 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH1003AGWQ
