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    100 WATTS POWER AMPLIFIER Search Results

    100 WATTS POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF
    MGN1S1208MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN PDF

    100 WATTS POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sc 1177

    Abstract: MJ802 MJ4502 Tra 1120 r MJ4502 MJ802
    Contextual Info: MJ4502 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER PNP SILICON TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. High DC Current Gain - hFE = 25-100 @ lc ” 7.5 A


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    MJ4502 MJ802 2sc 1177 MJ802 MJ4502 Tra 1120 r MJ4502 MJ802 PDF

    MCPA4080

    Abstract: DS-MCPA4080 remec, amplifier
    Contextual Info: Multi-carrier Power Amplifier MCPA4080 Power FEATURES 100 Watts • 100 W average output power Frequency Band • Industry leading efficiency, 8.5% typical PCS • PowerStackTM architecture provides inherent soft fail protection Technology • Hot swap, field replaceable module


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    MCPA4080 DS-MCPA4080 MCPA4080 remec, amplifier PDF

    6550 Tube

    Abstract: TUBE 6550 6550 pentode 6550A triode push-pull circuit 6550 6000 Watt audio amplifier circuit diagram 6550 tubes B799 audioamplifierultralinear
    Contextual Info: — PRODUCT INFORMATION — Page 1 4-72 Beam Pentode TUBES FOR AF POWER-AMPLIFIER APPLICATIONS AUDIO POWER OUTPUT UP TO 100 WATTS OUTPUT - 2 TUBES IIM PUSH-PULL 42 WATTS PLATE DISSIPATION The 6550-A is a beam-power pentode primarily designed for use in audio-frequency power-amplifier applications. It


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    550-A 550-A B7-99, K-55611-TD379-9 6550 Tube TUBE 6550 6550 pentode 6550A triode push-pull circuit 6550 6000 Watt audio amplifier circuit diagram 6550 tubes B799 audioamplifierultralinear PDF

    MJE2801

    Abstract: TRANSISTOR ML5 K 1611 1257 transistor MJE2901 transistor 9005 mje2901 pnp transistor wc MJE2801K MJE2901K k 351 transistor
    Contextual Info: MJE2801 SILICON MJE2801K 10 AMPERE POWER TRANSISTORS HIGH-POWER NPN SILICON TRANSISTOR NPN SILICON SO VOLTS 90 WATTS . . . for use as an output device in complementary audio amplifiers up to 35-Watts music power per channel. M JE2801 • High DC Current Gain — hpg = 25-100 @ lc * 3.0 A


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    MJE2801 MJE2801K 35-Watts MJE2901, MJE2901K MJE2801-Case MJE2801K-Case MJE2801 TRANSISTOR ML5 K 1611 1257 transistor MJE2901 transistor 9005 mje2901 pnp transistor wc MJE2801K MJE2901K k 351 transistor PDF

    J802

    Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
    Contextual Info: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •


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    MJ802 MJ4502 r14525 J802/D J802 MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502 PDF

    Contextual Info: ON Semiconductort MJ4502 High−Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —


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    MJ4502 100-Watts MJ802 PDF

    Contextual Info: TYPES TIXP547, TIXP548, TIXP549 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS OH • • 60 V , 80 V , and 100 V Min V BR CEO 100-A Rated Continuous Collector Current • 200 Watts at 100° C Case Temperature •


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    TIXP547, TIXP548, TIXP549 PDF

    SSPA C Band

    Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier • Aethercomm Part Number SSPA 1.20-1.40-100 is a Minimum output power = 100 Watts @ 85C base plate high power, pulsed solid state amplifier used for milit ary telemetry, data transmission and radar. This SSPA


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    PDF

    HW-02N

    Abstract: BNC T connectors INSERTION LOSS Microlab/FXR HW-02N HW-15N QQ-S-365 HW-04N bnc T connector loss Microlab FXR
    Contextual Info: MICROLAB/FXR Bias/Monitor Tees HU and HW series ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power, Low Loss 100 – 8,000 MHz 50 Watts Average Power Rating See HW series data for 500 Watts Minimal RF Insertion Loss High Reliability Powering of Antenna Amplifiers N, BNC, TNC, or SMA Standard


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    HW-08N HW-15N HW-30N HW-60N HW-02N BNC T connectors INSERTION LOSS Microlab/FXR HW-02N HW-15N QQ-S-365 HW-04N bnc T connector loss Microlab FXR PDF

    PH1516-100

    Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching


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    PH1516-100 5000pF lN5417 PH1516-100 PDF

    MJ4502

    Abstract: MJ802 MJ4502 MJ802
    Contextual Info: ÆàMOSPEC HIGH-POWER PNP SILICON TRANSISTOR PNP MJ4502 .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. FEA TU RES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area


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    100-Watts 750mA MJ802 MJ4502 MJ802 MJ4502 MJ802 PDF

    ACRIAN

    Abstract: acrian inc BAM20 BAM20-2 VAM80 acrian B
    Contextual Info: GENERAL BAM20 DESCRIPTION 20 WATTS - 27 VOLTS 100-150 MHz.,-. This device is specifically designed for operation in VHF AM power amplifier applications covering the range 100 to 150 MHz. The device incorporates Nichrome resistor stabilization, and provides superior


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    01fl2TÃ M20r2T; 4-40pf 2-25pf C7-10uf ACRIAN acrian inc BAM20 BAM20-2 VAM80 acrian B PDF

    High-Power NPN Silicon Power Transistor 30A

    Abstract: MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3
    Contextual Info: ÆàMOS PEC HIGH-POWER NPN SILICON TRANSISTOR NPN .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. MJ802 FEATURES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area


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    100-Watts 750mA MJ4502 High-Power NPN Silicon Power Transistor 30A MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3 PDF

    Silicon Power Transistor DPAK MJD42c

    Abstract: 369D
    Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS


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    MJD41C MJD42C TIP41 TIP42 Silicon Power Transistor DPAK MJD42c 369D PDF

    MJD127T4

    Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
    Contextual Info: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


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    MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4 npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 PDF

    Silicon Power Transistor DPAK MJD42c

    Abstract: data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CT4 MJD42C MJD42C1 TIP41 TIP42
    Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS


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    MJD41C MJD42C TIP41 TIP42 MJD41C/D Silicon Power Transistor DPAK MJD42c data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CT4 MJD42C MJD42C1 PDF

    Contextual Info: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS .FOR GENERAL-PURPOSE POWER AMPLIFIER AND SWITCHING APPLICATIONS 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 125 WATTS • 25 A Collector Current • Low Leakage Current — IcEO = 1.0 mA @ 30 and 60 V


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    TIP36A TIP35B T1P368 T1P36C PDF

    DIODE 2N4002

    Abstract: 2N4002 2N4003 TEXAS 2N4003
    Contextual Info: TYPES 2N4002, 2N4003 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS s I ° z S 2 3 s " * | 30-A Rated Continuous Collector Current 100 Watts at 100°C Case Temperature Maximum V cE sat of 1.2 V at 30 A


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    2N4002, 2N4003 DIODE 2N4002 2N4002 2N4003 TEXAS PDF

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


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    BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810 PDF

    MJE105

    Abstract: MJE205 MJE105K MJE205K CASE 90-05
    Contextual Info: MJE105 SILICON MJE105K MEDIUM-POWER PNP SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers up to 20-Watts music power per channel. PNP SILICON • High DC Current Gain - hFE = 25-100 @ lc = 2.0 A


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    MJE105 MJE105K 20-Watts MJE205, MJE205K -MJE105- MJE105 MJE205 MJE105K MJE205K CASE 90-05 PDF

    Contextual Info: 7 AMPERE MEDIUM-POWER NPN SILICON POWER TRANSISTORS POWER TRANSISTORS NPN SILICON 80- 100 VOLTS 40 WATTS .designed for switching and wide-band amplifier applications. • • • Low Collector-Emitter Saturation Voltage VCE SAT = 1-2 Vnc (Max) @ Ic = 7.0 Adc


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    2N5428 PDF

    2N6378

    Abstract: 2N6379 2N6274 2N6377 MR850
    Contextual Info: MOTOROLA Order this document by 2N6379/D SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


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    2N6379/D* 2N6379/D 2N6378 2N6379 2N6274 2N6377 MR850 PDF

    MJ4502

    Abstract: MJ4502 EQUIVALENT MJ802 MJ4502 MJ802
    Contextual Info: SavantIC Semiconductor Product Specification MJ4502 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type MJ802 ·Excellent safe operating area APPLICATIONS ·For use as an output device in complementary audio amplifiers to 100-Watts music power per


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    MJ4502 MJ802 100-Watts -100V; MJ4502 MJ4502 EQUIVALENT MJ802 MJ4502 MJ802 PDF

    MJ4502

    Abstract: MJ4502 EQUIVALENT MJ802 EQUIVALENT MJ802 IC75A
    Contextual Info: Inchange Semiconductor Product Specification MJ4502 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ802 ・Excellent safe operating area APPLICATIONS ・For use as an output device in complementary audio amplifiers to 100-Watts music power per


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    MJ4502 MJ802 100-Watts -100V; MJ4502 MJ4502 EQUIVALENT MJ802 EQUIVALENT MJ802 IC75A PDF