100 UH Search Results

Contextual Info: SMD POWER CHOKE CSS0214P MECHANICAL DIMENSIONS Unit:mm ELECTRICAL SPECIFICATIONS: PART NO. MARKING L (uH) TEST FREQ. (KHz) 100 100 100 100 100 100 100 100 100 100 100 100 CSS0214P-1R5N-LFR 1R5 1.5 CSS0214P-1R8N-LFR 1R8 1.8 CSS0214P-2R2N-LFR 2R2 2.2 CSS0214P-2R7N-LFR

Contextual Info: Direct Current Characteristics LQH3NPNxxxxM0 1000 Inductance uH H 100 1R0 4R7 100 10 470 101 1 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH2MCNxxxx52 Inductance uH H 100 1R0 10 1R5 2R2 3R3 4R7 6R8 100 1 0.1 10 100 Current (mA) 1000

Contextual Info: Direct Current Characteristics LQH44PNxxxxP0 Inductance uH H 100 1R0 10 2R2 3R3 4R7 6R8 100 1 220 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH32PNxxxxN0 1000 Inductance uH H 100 1R0 2R2 4R7 10 100 220 1 0.1 1 10 100 Current (mA) 1000 10000

Contextual Info: Direct Current Characteristics LQH55PNxxxxR0 Inductance uH H 100 10 1R2 2R2 2R7 3R3 4R7 6R8 100 220 1 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH3NPNxxxxG0 1000 100 Inductance uH H 1R0 4R7 100 10 470 101 251 1 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH3NPNxxxxJ0 100 470 10 Inductance uH 330 220 150 100 6R8 4R7 1 3R3 2R2 1R5 1R0 0.1 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH44PNxxxxJ0 100 470 10 Inductance uH 330 220 150 100 6R8 4R7 1 3R3 2R2 1R5 1R0 0.1 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH88PNxxxx38 100 101 680 10 Inductance uH 470 330 220 150 100 6R8 1 4R7 3R3 2R2 1R5 1R0 0.1 100 1000 10000 Current (mA) 100000

Contextual Info: Direct Current Characteristics LQH6PPNxxxx43 1000 100 101 Inductance uH 680 470 330 220 10 150 100 6R8 4R7 3R3 1 2R2 1R5 1R0 0.1 100 1000 Current (mA) 10000

40055

Abstract: 40051 40057 ET-40051
Contextual Info: ET-40050 SERIES T1/E1/ISDN Primary Rate Transformers ET- 40050 SERIES ø 0.6 Mechanical Dimensions: UNIT:mm ET-40051 ET-40052 ET-40053 ET-40054 ET-40055 ET-40056 ET-40057 ET-40058 Reflects on PRI = Specifications 100 100 100 75/100/120 100 100 100 100 Reflects on SEC =

UR67

Abstract: RA943 radiation pattern of telescopic antenna RA456 RA951 HE30TF
Contextual Info: TECHNICAL SPECIFICATION VHF & UHF LOG PERIODIC ANTENNAS RA943 RA951 Bandwidth 28-100 MHz 100-500 MHz VSWR <2:1 over 80% of band 30-100 MHz <3:1 over entire band 28-100 MHz 2:1 typical 3:1 maximum Impedance 50W 50W Gain 4dBi Min, typically 6dBi 4dBi Min, typically 6dBi

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 M m % a £ Vrrm Vr UH 15 IS] f t fé fe I fm Io, I f * T fc ft I fsm T fc # VFiiiax V (V) (mA) (°C> fó T 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 100* 100* 100* 100* 0. 5 MA223 MA291 MA856 MA858 MA859 të T fô T fô “F fâ T fô T

Surface Mount

Contextual Info: er w Po 1.2 2.2 3.3 4.7 6.8 10 12 15 18 22 27 33 39 47 56 68 82 100 SERIES SPD42R 100 0.019 100 0.023 100 0.032 100 0.045 100 0.060 100 0.083 1.0 0.100 1.0 0.115 1.0 0.150 1.0 0.160 1.0 0.190 1.0 0.215 1.0 0.290 1.0 0.320 1.0 0.365 1.0 0.480 1.0 0.520 1.0

BLC6G22-100

Abstract: BLC6G22LS-100 SOT896-1
Contextual Info: BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:

BLF4G22-100

Abstract: BLF4G22S-100 RF35
Contextual Info: BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance

TD 950

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: L=350 uH Min @ 100 KHz, 0.1V with 0.008 ADC Insertion loss: -0.5dB Typ. @ 100 KHz,~100 MHz. Return loss: -21dB Typ. @ 2 MHz~30 MHz/-17dB Typ. @ 40 MHz. -14.5dB Typ. @ 50 MHz/ -12dB Tpy. @ 60 MHz~80 MHz 1:1 1.100 TYP.

0105-50

Abstract: Scans-00115685
Contextual Info: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: L=1.5 mH Min @ 100 KHz. 50 mV Resistance: DCR= 0.7 ohms MAX @ 25ºC pin 2-6 DCR= 0.90 ohms MAX @ 25 C (pin 1-5) Leakage Inductance: L= 0.8 uH Max @ 100 KHz, 50mV 0.250 MAX Interwinding capacitance: Cw/w=35 pf max @ 100 KHz, 50mV.

ZC3202

Abstract: ZC3201 ZC32 ZC30 ZC3001 BBY20 BBY17 ZC202 ZC29 BBY18
Contextual Info: SILICON DIODES Variable Capacitance Tuning Diodes Type volts Max. !r at 80v |*A BBY17 BBY18 BBY19 BBY20 BBY21 BBY22 100 100 100 100 100 100 0 2 0-2 0-2 02 0-2 0-2 Max. Vr *±20% tolerance Nominal C T* at V R = 4v, f=1M H z pF: 3 8 10 15 22 33 47 Type ZC700

MA205WK

Abstract: MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859 MC2336
Contextual Info: -161 fe M m % a £ Vrrm Vr Io, I f * T f c f t I I fm UH fsm V (V) (mA) fóT 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 1 00 * 100* 100* 100* 0. 5 MA223 MA291 MA856 MA858 MA859 të T fô T f ô “F fâ T fô T 75 250 75 200 30 30 35 225 300

BC346A

Contextual Info: R oH S WHITE DOT UNIT DOES NOT CONTAIN LEAD TOP VIEW SIDE VIEW O 4 NIC I. SCREENING @ 25°C •O 3 PRI INDUCTANCE : 35 uH ± 10 uH @ 2 MHZ (100%) SCHEMATIC INSERTION LOSS : 0.6 dB MAX. , 0 . 4 - 3 MHZ (100%) BANDWIDTH RIPPLE : 0.5 dB MAX. , 0 . 4 - 3 MHZ (100%)

jcop31

Abstract: PCF7921 NXP PN533 JCOP PN533 MOB4 package JCOP21 JCOP41 P5CN072 pdm1.1
Contextual Info: Smart solutions for smart services ISO 14443 ISO 15693 NXP Contactless Reader Systems Reader ICs MF RC500 100 64 8-bit parallel MF RC530 100 64 8-bit parallel, SPI MF RC531 100 64 8-bit parallel, SPI SL RC400 100 64 8-bit parallel CL RC632 100 64 8-bit parallel, SPI