100 UH Search Results

Contextual Info: SMD POWER CHOKE CSS0214P MECHANICAL DIMENSIONS Unit:mm ELECTRICAL SPECIFICATIONS: PART NO. MARKING L (uH) TEST FREQ. (KHz) 100 100 100 100 100 100 100 100 100 100 100 100 CSS0214P-1R5N-LFR 1R5 1.5 CSS0214P-1R8N-LFR 1R8 1.8 CSS0214P-2R2N-LFR 2R2 2.2 CSS0214P-2R7N-LFR

Contextual Info: Direct Current Characteristics LQH3NPNxxxxM0 1000 Inductance uH H 100 1R0 4R7 100 10 470 101 1 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH44PNxxxxP0 Inductance uH H 100 1R0 10 2R2 3R3 4R7 6R8 100 1 220 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH55PNxxxxR0 Inductance uH H 100 10 1R2 2R2 2R7 3R3 4R7 6R8 100 220 1 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH3NPNxxxxG0 1000 100 Inductance uH H 1R0 4R7 100 10 470 101 251 1 0.1 10 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH3NPNxxxxJ0 100 470 10 Inductance uH 330 220 150 100 6R8 4R7 1 3R3 2R2 1R5 1R0 0.1 100 1000 Current (mA) 10000

Contextual Info: Direct Current Characteristics LQH6PPNxxxx43 1000 100 101 Inductance uH 680 470 330 220 10 150 100 6R8 4R7 3R3 1 2R2 1R5 1R0 0.1 100 1000 Current (mA) 10000

UR67

Abstract: RA943 radiation pattern of telescopic antenna RA456 RA951 HE30TF
Contextual Info: TECHNICAL SPECIFICATION VHF & UHF LOG PERIODIC ANTENNAS RA943 RA951 Bandwidth 28-100 MHz 100-500 MHz VSWR <2:1 over 80% of band 30-100 MHz <3:1 over entire band 28-100 MHz 2:1 typical 3:1 maximum Impedance 50W 50W Gain 4dBi Min, typically 6dBi 4dBi Min, typically 6dBi

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 M m % a £ Vrrm Vr UH 15 IS] f t fé fe I fm Io, I f * T fc ft I fsm T fc # VFiiiax V (V) (mA) (°C> fó T 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 100* 100* 100* 100* 0. 5 MA223 MA291 MA856 MA858 MA859 të T fô T fô “F fâ T fô T

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 M m % a £ Vrrm Vr fe UH Io, If * T f c f t I f s m T f c # If m V (V) (mA) fóT 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 100* 100* 100* 100* 0. 5 MA2 2 3 MA291 MA856 MA858 MA859 tëT fôT fô“ F fâT fôT 75 250 75 200 30 30 35 225

BLC6G22-100

Abstract: BLC6G22LS-100 SOT896-1
Contextual Info: BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:

BLF4G22-100

Abstract: BLF4G22S-100 RF35
Contextual Info: BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance

0105-50

Abstract: Scans-00115685
Contextual Info: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon

ZC3202

Abstract: ZC3201 ZC32 ZC30 ZC3001 BBY20 BBY17 ZC202 ZC29 BBY18
Contextual Info: SILICON DIODES Variable Capacitance Tuning Diodes Type volts Max. !r at 80v |*A BBY17 BBY18 BBY19 BBY20 BBY21 BBY22 100 100 100 100 100 100 0 2 0-2 0-2 02 0-2 0-2 Max. Vr *±20% tolerance Nominal C T* at V R = 4v, f=1M H z pF: 3 8 10 15 22 33 47 Type ZC700

BC346A

Contextual Info: R oH S WHITE DOT UNIT DOES NOT CONTAIN LEAD TOP VIEW SIDE VIEW O 4 NIC I. SCREENING @ 25°C •O 3 PRI INDUCTANCE : 35 uH ± 10 uH @ 2 MHZ (100%) SCHEMATIC INSERTION LOSS : 0.6 dB MAX. , 0 . 4 - 3 MHZ (100%) BANDWIDTH RIPPLE : 0.5 dB MAX. , 0 . 4 - 3 MHZ (100%)

jcop31

Abstract: PCF7921 NXP PN533 JCOP PN533 MOB4 package JCOP21 JCOP41 P5CN072 pdm1.1
Contextual Info: Smart solutions for smart services ISO 14443 ISO 15693 NXP Contactless Reader Systems Reader ICs MF RC500 100 64 8-bit parallel MF RC530 100 64 8-bit parallel, SPI MF RC531 100 64 8-bit parallel, SPI SL RC400 100 64 8-bit parallel CL RC632 100 64 8-bit parallel, SPI

TMPC1004H

Abstract: PIC1004H3R3MN PIC1004HR22MN TMPC1004
Contextual Info: d a c b PIC1004HR22MN TMPC1004H-R22 0.4 PIC1004HR36MN TMPC1004H-R36 0.8 100 100 90 90 80 0.3 70 60 0.2 50 40 30 0.1 INDUCTANCE uH INDUCTANCE (uH) 80 0.6 70 60 0.4 50 40 30 0.2 20 20 10 15 30 45 60 10 15 30 45 60 PIC1004HR39MN TMPC1004H-R39 0.8 100 PIC1004HR45MN

MA47420-132

Abstract: MA47054 ma8334 diode 4P604 4p60 MA4PH301 ma-47266 MA4P9 MA4P504-132 MA8334
Contextual Info: PIN DIODE SELECTION GUIDE SILICON BEAM LEAD PIN DIODES Specifications @ T a = 25°C MODEL NUMBER VOLTAGE RATING volts MAXIMUM CAPACITANCE (PF) MA4P800 MA4P801 MA4P802 MA4P803 MA4P461 MA4P462 100 100 100 100 50 30 .025 .030 .040 .050 .070 .120 MAXIMUM Rs

ZAPD-900-5W

Abstract: ZAPD-900-5W-N ZAPD-900-5W-S
Contextual Info: Coaxial Power Splitter/Combiner 2 Way-0° 50Ω ZAPD-900-5W+ 100 to 900 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 5W max. Internal Dissipation 1W max. • wideband, 100 to 900 MHz

ZAPD-900-5W

Abstract: ZAPD-900-5W-N ZAPD-900-5W-S
Contextual Info: Coaxial Power Splitter/Combiner 2 Way-0° 50Ω ZAPD-900-5W 100 to 900 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 5W max. Internal Dissipation 1W max. • wideband, 100 to 900 MHz

TDA7498

Abstract: TDA7498TR resistor 1k 100W
Contextual Info: TDA7498 100 W + 100 W dual BTL class-D audio amplifier Preliminary data Features „ 100 W + 100 W output power at THD = 10% with RL = 6 Ω and VCC = 36 V „ Wide range single supply operation 10 - 39 V „ High efficiency (η = 90%) „ Four selectable, fixed gain settings of

BAL0105-100

Abstract: J3315 Scans-00115697
Contextual Info: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved

TDA7498

Abstract: TDA7498TR TDA*7498 16107
Contextual Info: TDA7498 100 watt + 100 watt dual BTL class-D audio amplifier Features „ 100 W + 100 W output power at THD = 10% with RL = 6 Ω and VCC = 36 V „ 80 W + 80 W output power at THD = 10% with RL = 8 Ω and VCC = 34 V „ Wide range single supply operation 14 - 39 V

IC 4093 pin

Abstract: GCM188R71H103KA37D MCR03EZHUJ150 SKY65142 267M1602 D965 d965 TRANSISTOR equivalent uhf linear amplifier module GRM1885C1H151JA01D GRM1885C1H152JA01D
Contextual Info: Preliminary data sheet SKY65142: 100–1000 MHz Ultra Wideband Variable Gain Amplifier Applications Block Diagram AMPS/PCS/DCS/GSM/EDGE/GPRS • VHF/UHF TV/Tetra • Base stations • Repeaters VATT l VCNT Features W  ideband frequency operation: 100–1000 MHz