10.0GHZ TRANSISTOR AMPLIFIER Search Results

10.0GHZ TRANSISTOR AMPLIFIER Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TC75S51F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353	Datasheet
TC75S54F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353	Datasheet
TC75S55F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.8V to 7.0V, IDD=10μA, SOT-25/SOT-353	Datasheet
TA75W01FU		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505	Datasheet
TC75S102F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25	Datasheet

10.0GHZ TRANSISTOR AMPLIFIER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC5728 Abstract: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5728 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5728 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, 1,6 It is designed for high frequency application.	Original	2SC5728 2SC5728 JEITASC-90 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN	PDF
2SC5726 Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5726 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5726 is a mini package resin sealed	Original	2SC5726 2SC5726 SC-59	PDF
2SC5727 Abstract: S2-12V Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5727 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5727 is a super mini package resin sealed	Original	2SC5727 2SC5727 SC-70 S2-12V	PDF
Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.	Original	BFR840L3RHESD BFR840L3RHESD:	PDF
rf transistor frequency 10.0GHz gain 20 dB Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.	Original	BFR840L3RHESD BFR840L3RHESD: rf transistor frequency 10.0GHz gain 20 dB 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band	PDF
BFR840L3RHESD Abstract: Germanium Transistor LNA ku-band Contextual Info: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.	Original	BFR840L3RHESD BFR840L3RHESD: BFR840L3RHESD Germanium Transistor LNA ku-band	PDF
bfp840 Abstract: LNA ku-band BFP840FESD BFP840F ku-band lnb simulation Contextual Info: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.	Original	BFP840FESD BFP840FESD: bfp840 LNA ku-band BFP840FESD BFP840F ku-band lnb simulation	PDF
Contextual Info: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.	Original	BFP840FESD BFP840FESD:	PDF
BFP840F Abstract: Germanium Transistor spice gummel LNA ku-band Contextual Info: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.	Original	BFP840FESD BFP840FESD: BFP840F Germanium Transistor spice gummel LNA ku-band	PDF
MOTOROLA SCR 1725 Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1	Original	DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901	PDF
transistors JX 6822 A Abstract: MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026 Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . viii Chapter One Selector G u id e .1.1-1	OCR Scan	MCH12140 MCK12140 2PHX11136Q-21 transistors JX 6822 A MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026	PDF