10-25 RD Search Results

Contextual Info: C Xp nm ircuit mcd B Vf Volts MIN TYP 635 3.6 10 10 585 2.2 6.3 563 5.6 635 IfmA T Y P oard Indicators -10 MAX IfmA 2.0 3.0 10 35 10 2.1 3.0 10 35 16 10 2.1 3.0 10 35 1.0 2.0 2.0 1.9 2.4 2.0 25 585 1.0 2.0 2.0 2.4 2.9 2.0 25 565 1.0 2.0 2.0 1.9 2.4 2.0 25

iP2970

Abstract: palce16v8 programming guide
Contextual Info: COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-10/15/25, Q-20/25 MIL: H-15/20/25 PALCE16V8 Family AdvaM "£o EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS • ■ ■ Pin, function and fuse-map compatible with all 20-pin GAL devices

SST177

Abstract: J174 J175 J176 J177 SST174 SST175 SST176 S6 SOT23-3
Contextual Info: J/SST174 Series Siliconix PĆChannel JFETs J174 J175 J176 J177 Product Summary SST174 SST175 SST176 SST177 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 -10 25 J/SST175 3 to 6 125 -10 25 J/SST176 1 to 4 250 -10

Contextual Info: PALCE22V10 COM'L: H-5/7/10/15/25,0-10/15/25 IND: H-10/15/20/25 PALCE22V10Z COM'L:-25 IND: -15/25 BEYOND PERFO RM A N CE PALCE22V10 and PALCE22V10Z Families 24-Pin EE CMOS Zero Power Versatile PAL Device DISTINCTIVE CHARACTERISTICS ♦ As fast as 5-ns propagation delay and 142.8 MHz fMAX (external)

Si4670DY-T1-GE3

Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

si4670

Abstract: Si4670DY-T1-GE3
Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: PALCE22V10 COM'L: H-5/7/10/15/25,Q-10/15/25 IND: H-10/15/20/25 PALCE22V10Z COM'L:-25 IN D :-15/25 VANTI S BEY O N D PER FO RM AN C E PALCE22V10 and PALCE22V10Z Families 24-Pin EE CMOS Zero Power Versatile PAL Device DISTINCTIVE CHARACTERISTICS ♦ As fast as 5-ns propagation delay and 142.8 M H z f MAX (external)

Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)

ISS380

Abstract: 400-02F sm 2025
Contextual Info: MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS on = 200 V = 418 A Ω = 4.2 mΩ 11 1 N-Channel Enhancement Mode 2 10 1 11 Preliminary data 10 2 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ

mosfet 0608

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a • Halogen-free According to IEC 61249-2-21

E9320

Contextual Info: COM'L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25, Q-20/25 PALCE20V8 Family BEYOND PERFORM ANCE EE CMOS 24-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS ♦ Pin and function compatible with all PAL 20V8 devices ♦ Electrically erasable CMOS technology provides reconfigurable logic and full testability

Contextual Info: C ircuit • ie' @ TY P MAX 10 10 2.0 3.0 10 35 2.2 6.3 10 2.1 3.0 10 35 5.6 16 10 2.1 3.0 10 35 MIN TYP 3.6 I ndicators V f Volts m cd Th 5 OOOO PThShET B oard IfmA IfmA 1.0 2.0 2.0 1.9 2.4 2.0 25 1.0 2.0 2.0 2.4 2.9 2.0 25 D im e n s io n s / C 4.0 10.0

U430

Abstract: U431 Jfet U431
Contextual Info: U430/431 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) U430 -1 to -4 -25 10 -15 25 U431 -2 to -6 -25 10 -15 25 jVGS1 - VGS2j Typ (mV) Features Benefits Applications D D D D D D D

SOD123 marking L43

Contextual Info: Surface M ount Schottky Diodes mm 150/200m W Schottky/M iniM ELF Type Number M axim um Junction Temp PRV Tjmax V °c V mA V mA pA V pF typ 30 % 100 125 125 125 0.40 0.33 0.45 10 2 10 0.65 0.45 1.00 50 15 250 0.5 0.5 5.0 25 25 75 10 10 10 125 125 125 0.40

MLG5506

Abstract: Photo resistor resistor specification CdS PHOTO resistor "Photo resistor" Response mlg55
Contextual Info: MEC PHOTO RESISTOR SPECIFICATION MODEL. NO: MLG5506 Electrical Characteristics Descriptions Photo Resistance at 10 Lux Ta-25 Symbol RL Dark Resistance After 10 sec Removal of 10 Lux Gamma Value ( at 10 ~ 100 Lux RD Min. 4 Typ. - Max. 6 Unit k 0.2 - - M

40 pins ic used in color television with ir captu

Abstract: semiconductors cross index itt capacitors itt capacitor semiconductors cross reference ITT Intermetall 200H 65C02 K6S6 413027
Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

MP1470

Abstract: transistor tip 3005 ITT Intermetall itt capacitor caption ITT ccu 3000 i 65C02 RTD 2482
Contextual Info: MICRONAS INTERMETALL CCZ 3005 H Central Control Unit MICRONAS Edition March 13, 1996 6251-412-2DS CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 6 6 8 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34

ITT ccu 3000 i

Contextual Info: Edition March 13,1996 6251-412-2DS ITT INTERMETALL HbfiE?!! OODS'ìSb IflH CCZ 3005 H Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 9 10 10 15 16 16 17 20 24 24 24 24 25 25 25 25 26 26 27 27 28 30 31 31 32 34 34 34 35 35 2. 2.1. 2.2. 2.3.

Contextual Info: New Product Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 25 Channel-2 ID (A)a, e Qg (Typ.) RDS(on) (Ω)

Contextual Info: Si7998DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) ID (A) a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.0070 at VGS = 4.5 V 30 Qg (TYP.)