10-25 RD Search Results

Surface Mount

Abstract: 0909a 472K smd
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 8/27/10 3:19 PM Page 20 R F SERIES 4232 PHENOLIC CORE 250 25 20 220 25 20 180 25 20 165 25 19 135 25 19 120 25 17 200 25 17 180 25 17 140 25 17 120 25 15 110 25 15 100 25 10 90 25 10 0.45 0.50 0.54 0.61 0.68 0.72

Contextual Info: C Xp nm ircuit mcd B Vf Volts MIN TYP 635 3.6 10 10 585 2.2 6.3 563 5.6 635 IfmA T Y P oard Indicators -10 MAX IfmA 2.0 3.0 10 35 10 2.1 3.0 10 35 16 10 2.1 3.0 10 35 1.0 2.0 2.0 1.9 2.4 2.0 25 585 1.0 2.0 2.0 2.4 2.9 2.0 25 565 1.0 2.0 2.0 1.9 2.4 2.0 25

iP2970

Abstract: palce16v8 programming guide
Contextual Info: COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-10/15/25, Q-20/25 MIL: H-15/20/25 PALCE16V8 Family AdvaM "£o EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS • ■ ■ Pin, function and fuse-map compatible with all 20-pin GAL devices

0909a

Abstract: 562F SMD MARKING CODE 221k 09-09A
Contextual Info: F SERIES 4232 PHENOLIC CORE 250 25 20 220 25 20 180 25 20 165 25 19 135 25 19 120 25 17 200 25 17 180 25 17 140 25 17 120 25 15 110 25 15 100 25 10 90 25 10 0.45 0.50 0.54 0.61 0.68 0.72 0.76 0.84 0.92 1.06 1.25 1.40 1.50 519 493 474 446 442 410 400 380 363

SST177

Abstract: J174 J175 J176 J177 SST174 SST175 SST176 S6 SOT23-3
Contextual Info: J/SST174 Series Siliconix PĆChannel JFETs J174 J175 J176 J177 Product Summary SST174 SST175 SST176 SST177 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 -10 25 J/SST175 3 to 6 125 -10 25 J/SST176 1 to 4 250 -10

Contextual Info: PALCE22V10 COM'L: H-5/7/10/15/25,0-10/15/25 IND: H-10/15/20/25 PALCE22V10Z COM'L:-25 IND: -15/25 BEYOND PERFO RM A N CE PALCE22V10 and PALCE22V10Z Families 24-Pin EE CMOS Zero Power Versatile PAL Device DISTINCTIVE CHARACTERISTICS ♦ As fast as 5-ns propagation delay and 142.8 MHz fMAX (external)

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)

MAX7044

Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Si4670DY-T1-GE3

Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

si4670

Abstract: Si4670DY-T1-GE3
Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: 10 - 500 MHz Standard Hybrid Amplifier Specification limit Parameters 10-500 MHz bandwidth Temperature Frequency range TO-8 package 0.8 1.0 dB M ax p-p 25 25 d B Min Input 1.5:1 1.5:1 Max Output 1.5:1 1.5:1 Max + 15 + 14 dBm Min 3rd O rde r +28 +25 dBm Min

Contextual Info: Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)

Contextual Info: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0100 Rev.1.00 Jul 27, 2012 Features • Very low on-resistance RDS on = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)

tda7492p

Abstract: TDA7492 SZ-LAB-TDA7492P TDA7492P13TR
Contextual Info: TDA7492P 25 W + 25 W dual BTL Class-D audio amplifier Features ! 25 W + 25 W continuous output power at THD = 10% with VCC = 20 V and RL = 8 Ω ! Wide range single supply operation 10 - 26 V ! High efficiency (η =90%) ! Four selectable, fixed gain settings of

Contextual Info: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)

ISS380

Abstract: 400-02F sm 2025
Contextual Info: MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS on = 200 V = 418 A Ω = 4.2 mΩ 11 1 N-Channel Enhancement Mode 2 10 1 11 Preliminary data 10 2 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ

mosfet 0608

Contextual Info: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a • Halogen-free According to IEC 61249-2-21

Contextual Info: Dual Power HiPerFET Module VMM 85-02F VD S S D 25 RD S{on Phaseleg Configuration High dv/dt, Low trr, HDMOS™ Family = 200 V = 83 A = 25 mû •tU 9 i— Prelim inary Data 11 10 ^ Symbol Test Conditions v DSS T j = 25°C to 15 0 “ C 200 V V MR T j = 25” C to 150°C; RQS = 10 k£J

bf240 equivalent

Abstract: DSA003669
Contextual Info: PRELIMINARY DATA SHEET MICRONAS Edition June 28, 2000 6251-471-1PD CCZ 3005K Central Control Unit MICRONAS CCZ 3005K PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 5 5 5 5 5 6 6 8 9 10 10 11 16 17 17 18 21 25 25 25 25

E9320

Contextual Info: COM'L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25, Q-20/25 PALCE20V8 Family BEYOND PERFORM ANCE EE CMOS 24-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS ♦ Pin and function compatible with all PAL 20V8 devices ♦ Electrically erasable CMOS technology provides reconfigurable logic and full testability