JMSH1004BG
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JMSH1004BG with 100 V drain-source voltage, 112 A continuous drain current, 3.3 mΩ typical RDS(ON) at 10 V VGS, and low gate charge for high-efficiency switching applications. |
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JMSH1004BE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with 3.7 mOhm typical RDS(ON) at 10V VGS, 134A continuous drain current, available in TO-220-3L and TO-263-3L packages. |
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JMSH1004BC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with ultra-low RDS(ON) of 3.7 mΩ at VGS = 10V, continuous drain current of 134A, low gate charge, and 100% UIS tested, suitable for power management, motor driving, and switching applications. |
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JMSH1004BGWQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in PDFN5x6-8L-W package with 3.6 mΩ RDS(ON) at 10V VGS, 152A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH1004BEQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V 3.5mΩ N-Ch Power MOSFET in TO-263-3L package with 160A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH1004BG
