10 BAND PARAMETRIC Search Results

Contextual Info: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module Data Sheet - Rev 2.2 FEATURES • InGaP HBT Technology • High Efficiency Cell Band : • 37.5 % @ POUT = +27.6 dBm • 23 % @ POUT = +16 dBm • 11.5 % @ POUT = +10 dBm AW

6323R

Contextual Info: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • High Efficiency Cell Band : • 37.5 % @ POUT = +27.6 dBm • 23 % @ POUT = +16 dBm • 11.5 % @ POUT = +10 dBm AW

Contextual Info: AWT6388R 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • High Efficiency: 38% CDMA • Low Receive Band Noise NRX -134 dBm/Hz @ 10 MHz offset • Low Leakage Current (<5 µA)

AWT6388R

Abstract: RF MODULE CIRCUIT DIAGRAM for channel 4
Contextual Info: AWT6388R 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 38% CDMA • Low Receive Band Noise NRX -134 dBm/Hz @ 10 MHz offset • Low Leakage Current (<5 µA)

AWT6388R

Abstract: AWT*6388r
Contextual Info: AWT6388R 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • High Efficiency: 38% CDMA • Low Receive Band Noise NRX -134 dBm/Hz @ 10 MHz offset • Low Leakage Current (<5 µA)

Contextual Info: Multi-Mode HELP4 TM AWT6624 UMTS1700 Band 4+9+3+10 WCDMA/CDMA Linear PAM Data Sheet - Rev 2.8 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): 39 % @ POUT = +28.3 dBm 36% @ POUT = +17 dBm

AWC6323RM47Q7

Abstract: 6323R AWc6323 AWC6323RM47P9
Contextual Info: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • High Efficiency: 38 % @ +27.6 dBm 22 % @ +16 dBm 11 % @ +10 dBm AW C 632 • Low Quiescent Current: <4 mA

NMT450

Abstract: EN61326-1 am ssb receiver modulation demodulation ssb 2100 jrc telescopic antenna for 1800 mhz IEEE488 RF GEN
Contextual Info: 2967iss13.qxd 01/Dec/2004 10:09 Page 1 Wireless 2967 GSM 900/1800/1900 Radio Test Set High Performance GSM 900/1800/1900 and analog test solution with digital test incorporating Dual Band functionality. This product can be used in conjunction with PhoneTest software

Contextual Info: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • High Efficiency: 38 % @ +27.6 dBm 22 % @ +16 dBm 11 % @ +10 dBm AW C 632 • Low Quiescent Current: <4 mA

Contextual Info: Multi-Mode HELP4 TM AWT6624 UMTS1700 Band 4+9+3+10 WCDMA/CDMA Linear PAM Data Sheet - Rev 2.7 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): 39 % @ POUT = +28.3 dBm 36% @ POUT = +17 dBm

AWT6136

Abstract: AWT6136RM5P8
Contextual Info: AWT6136 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • High Efficiency 37% CDMA • Low Receive Band Noise NRX -132 dBm/Hz @ 10 MHz offset • Low Leakage Current (<5 µA) • SMT Module Package

HSPA Module

Contextual Info: Multi-Mode HELP4 TM AWT6624 UMTS1700 Band 4+9+3+10 WCDMA/CDMA Linear PAM Data Sheet - Rev 2.3 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6624 39 % @ POUT = +28.3 dBm 37 % @ POUT = +17.0 dBm

3242v

Contextual Info: Multi-Mode HELP4 TM AWT6624 UMTS1700 Band 4+9+3+10 WCDMA/CDMA Linear PAM Data Sheet - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6624 39 % @ POUT = +28.3 dBm 37 % @ POUT = +17.0 dBm

Contextual Info: Multi-Mode HELP4 TM AWT6624 UMTS1700 Band 4+9+3+10 WCDMA/CDMA Linear PAM Data Sheet - Rev 2.5 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6624 39 % @ POUT = +28.3 dBm 36% @ POUT = +17 dBm

LM385

Abstract: 385by LM385/MAX691/MAX692/MAX693/MAX694/LM380 spice
Contextual Info: LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10 µA to 20 mA current range, they feature exceptionally low dynamic impedance and good temperature stability.

Contextual Info: LM185-1.2/LM285-1.2/LM385-1.2 Micropower Voltage Reference Diode General Description The LM185-1.2/LM285-1.2/LM385-1.2 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10 µA to 20 mA current range, they feature exceptionally low dynamic impedance and good temperature stability.

6323R

Abstract: AWc6323 AWC6323RM47P9 AWC6323RM47Q7 directional coupler
Contextual Info: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • High Efficiency: 37 % @ +27.6 dBm 22 % @ +16 dBm 11 % @ +10 dBm AW C 632 • Low Quiescent Current: <4 mA 3 • Internal Voltage Regulation

AWT6136

Contextual Info: AWT6136 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • • • • • • • • • • InGaP HBT Technology High Efficiency 37% CDMA Low Receive Band Noise NRX -132 dBm/Hz @ 10 MHz offset Low Leakage Current (<5 µA)

AWT6136

Abstract: AWT6136M5P8 AWT6136RM5P8 AWT6136R
Contextual Info: AWT6136 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • • • • • • • • • • • InGaP HBT Technology High Efficiency 37% CDMA Low Receive Band Noise NRX -132 dBm/Hz @ 10 MHz offset Low Leakage Current (<5 µA)

Contextual Info: AWT6136 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • • • • • • • • • • • InGaP HBT Technology High Efficiency 37% CDMA Low Receive Band Noise NRX -132 dBm/Hz @ 10 MHz offset Low Leakage Current (<5 µA)

Ericsson Base Station

Abstract: Nortel Base Station AC1009W ericsson macro radio base station AC4103 ERICSSON ANT 002 ANSI136 AC1019 return loss bridge ifr 2935
Contextual Info: issue3.qxd 01/Dec/2004 10:25 Page 1 Wireless 1900-5 CSA ANSI-136 Digital PCS Radio Test Set Engineered for maximum performance, the 1900-5 CSA is an all-in-one PCS solution for today's dual-band, dual-mode mobile and base station equipment. • ANSI-136 conformance test system for

SMD Pin R-PDSO-G5 Package

Contextual Info: THS3201 www.ti.com SLOS416 – JUNE 2003 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES DESCRIPTION D Unity Gain Bandwidth: 1.8 GHz D High Slew Rate: 10500 V/µs D Distortion at 100 MHz: G = 10 V/V, The THS3201 is a wide-band, high-speed current-feedback amplifier, designed to operate over a

ths3201

Contextual Info: THS3201 www.ti.com SLOS416 – JUNE 2003 1.8-GHz, LOW DISTORTION, CURRENT FEEDBACK AMPLIFIER FEATURES DESCRIPTION D Unity Gain Bandwidth: 1.8 GHz D High Slew Rate: 10500 V/µs D Distortion at 100 MHz: G = 10 V/V, The THS3201 is a wide-band, high-speed current-feedback amplifier, designed to operate over a

BC237

Abstract: Ceramic Dielectric Axial Capacitors Glass Encapsulated BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt Tuning Diodes MV1403 MV1404 MV1405 These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning