JMSL1010AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 8.3 mΩ typical RDS(ON) at 10V VGS, 86A continuous drain current, TO-252-3L package, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSH1010AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 9.2 mΩ typical RDS(ON) at 10V VGS, 79A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSL1010AK
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 8.3 mΩ typical RDS(ON) at 10V VGS, 70A continuous drain current, low gate charge, and 1.1°C/W junction-to-case thermal resistance. |
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NCE0110AK
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NCEPOWER
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NCE0110AK is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 10A continuous drain current, RDS(ON) less than 110mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications. |
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JMSH1010AK
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Jiangsu JieJie Microelectronics Co Ltd
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100 V, 64 A N-channel Power MOSFET in TO-252-3L package with 9.2 mΩ typical RDS(ON) at 10 V VGS, suitable for power management and motor driving applications. |
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NCEAP25N10AK
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NCEPOWER
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NCEAP25N10AK is an automotive-grade N-channel Super Trench II power MOSFET with 100V drain-source voltage, 37A continuous drain current, and low on-resistance of 21mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
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NCE1810AK
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NCEPOWER
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NCE1810AK N-Channel Enhancement Mode Power MOSFET with 180V drain-source voltage, 10A continuous drain current, and 240mΩ typical RDS(ON) at 10V VGS, suitable for power switching and high-frequency applications. |
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AK1810AK
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 180V VDS, 10A ID, and RDS(ON) of 200mΩ at VGS=10V, featuring low gate charge and high-density cell design for efficient power switching applications. |
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JMSL1010AKQ
