1.2 MICRON CMOS PROCESS FAMILY Search Results

1.2 Micron CMOS Process Family

Abstract: 1.2 micron cmos P-MOSFET metal oxide in capacitor vertical PNP metal resistor 0.8 Micron CMOS Process Family 0.03 um CMOS technology
Contextual Info: 1.2 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 2.4 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • Twin-tub • • 1.2µm 5volts Units Metal I pitch width/space 1.4 / 1.0

1.2 micron cmos

Abstract: 1.2 Micron CMOS Process Family 12-micron CMOS Process Family
Contextual Info: 1.2 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 2.4 µm Poly and Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuctionTM Option for prototypes Standard Cell Library

1.2 Micron CMOS Process Family

Contextual Info: 1.2 Micron CMOS Process Family Process parameters Features • Double Poly / Double Metal, • 2.4 µm Poly and Metal I Pitch, • 5.5 Volts Maximum Operating Voltage, • Twin-tub process on P-type or N-type wafers, • ProToDuctionTM Option for low cost prototypes,

1.2 Micron CMOS Process Family

Abstract: FTI-12 P-MOSFET 4800 mosfet mosfet 4800
Contextual Info: 1.2 Micron CMOS Process Family Process parameters Features • Double Poly / Double Metal, • 2.4 µm Poly and Metal I Pitch, • 5.5 Volts Maximum Operating Voltage, • Twin-tub process on P-type or N-type wafers, • ProToDuctionTM Option for low cost prototypes,

CMOS Process Family

Abstract: 1.5um cmos process family
Contextual Info: 1.5 Micron CMOS Process Family  February 1996 Features Technology Outline • • • • • • • • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option 1.2 Volts Very Low Voltage Option 5.5 Volts Maximum Operating Voltage Double Poly / Double Metal

Contextual Info: M T C -1 2 0 0 0 C M O S 1 .2 u Standard Cell Library Services CMOS Family Features • Technology: - 1.2 micron tw in -w ell CMOS process w ith polycide gates, double layer m etal, linear Ihin oxide capacitors and high ohmic resistors - Shrink capability to

ER142503.6V

Abstract: ER14250-VB3.6V
Contextual Info: CMOS- CSI 1.2 micron Process OPERATING LIFE @ TA = +125C AT RATED VOLTAGE Family Custom Driver Device MCD00002 Lot # 66210891 Package WSOIC Vcc 5.6V Qty 115 Time Point Failures Act Act Act Total Hrs Fails Hrs Fails Hrs Fails Dev. Hrs 168 500 1000 0 115000

datasheet VMOS Transistor

Abstract: CMOS Process Family 1.2 Micron CMOS Process Family
Contextual Info: 1.5 Micron CMOS Process Family Features • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option • 1.2 Volts Very Low Voltage Option • 5.5 Volts Maximum Operating Voltage • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • ProToDuctionTM Option for low cost prototypes

Contextual Info: 1.5 Micron CMOS Process Family Features • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option • 1.2 Volts Very Low Voltage Option • 5.5 Volts Maximum Operating Voltage • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • ProToDuctionTM Option for low cost prototypes

1.2 Micron CMOS Process Family

Abstract: CMOS Process Family 5-Micron-CMOS-Process 1.5um cmos process family 0.6 um cmos process
Contextual Info: 1.5 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 1.5µm Process Parameters 5volts & 3volts

micron resistor TCR

Abstract: CMOS Process Family micron resistor 1.2 Micron CMOS Process Family
Contextual Info: 5 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 10 µm Poly and Metal Pitch • Low TCR Resistor Module Description The Mitel 5µm process is a double poly/double metal CMOS process with an operating voltage range from

1.2 Micron CMOS Process Family

Abstract: CMOS Process Family
Contextual Info: 5 Micron CMOS Process Family  February 1996 Process Parameters Features • • Double Poly / Double Metal 10 µm Poly and Metal Pitch 5µm 12 volts Process Parameters Units Metal I pitch width/space 5/5 µm Description Poly pitch (width/space) 5/5 µm

CMOS Process Family

Abstract: 0.6 um cmos process
Contextual Info: 4 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 8 µm Poly and Metal Pitch 10 Volts Maximum Operating Voltage 15 Volts High Voltage Option Isolated Vertical PNP Bipolar Module Low TCR Resistor Module

p-mosfet

Abstract: Bipolar Junction Transistor MOSFET 1000 VOLTS p7094 0.7 um CMOS process parameters
Contextual Info: 4 Micron CMOS Process Family  June 1995 Process Parameters Features 4µm 4µm • Double Poly / Double Metal • 8 µm Poly and Metal Pitch • 10 Volts Maximum Operating Voltage Metal I pitch width/space 4/4 4 /4 µm • 15 Volts High Voltage Option

1.2 Micron CMOS Process Family

Abstract: 0.8 Micron CMOS Process Family CMOS Process Family 08um
Contextual Info: 0.8 Micron CMOS Process Family  October 1995 Features • • • • • Process Parameters Double Poly/Double Metal 1.7µm Poly and 2.1µm Metal I Pitch 5.5 Volts Maximum Operating Voltage Twin-tub process ProToDuction Option for prototype Description

cmos transistor 0.35 um

Abstract: 0.6 um cmos process transistor BIPOLAR
Contextual Info: 4 Micron CMOS Process Family Features Process parameters • Double Poly / Double Metal Process Parameters 4µm 4µm 10 volts 15 volts Metal I pitch width/space 4/4 4 /4 µm Metal II pitch (width/space) 3/4 3/4 µm Poly pitch (width/space) 4/4 4 /4 µm Contact

mosfet 4800

Contextual Info: 4 Micron CMOS Process Family Features Process parameters • Double Poly / Double Metal Process Parameters 4µm 4µm 10 volts 15 volts Metal I pitch width/space 4/4 4 /4 µm Metal II pitch (width/space) 3/4 3/4 µm Poly pitch (width/space) 4/4 4 /4 µm Contact

S-MOS navnet

Abstract: S-MOS asic B16c F1841
Contextual Info: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel

DIGITAL GATE EMULATOR USING 8085

Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S

TTL 7466

Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY
Contextual Info: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs

Contextual Info: AUA 53 HARRIS Automated Universal Array Radiation Hardened CM O S/SOS Family December 1990 D escription Features • Radiation Hardened ►Total D o s e .> 1 x 1 0 Rads Si ►Survivability . > 1 x 1 0 12 Rads (Si)/s

TTL 740 NAND propagation delay

Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
Contextual Info: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities

NA21 transistor

Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell
Contextual Info: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies

2500ECL

Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca
Contextual Info: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func­ tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.