1-SKE 68 CA Search Results

1.SKE 350

Abstract: 5KE300 1-5KE33
Contextual Info: 1500 WATT TRANSIENT VOLTAGE SUPPRESSORS CASE TYPE: 1.SKE BREAKDOWN VOLTAGE 1 DEVICE TYPE (2) . - 6.8 7.5 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 170 180 200 250 300 350 400 440 REVERSE STAND-OFF

Contextual Info: 82-66-RFX NOTES: 1. REVISIONS DRAW 1NG NO. M ATER IAL S OF CONSTRUCTION: 30DY. HOUSING, HEX NUT, - BRASS QQ-B-626 , NICKEL PLATED CO NT ACT PIN - PHOSPHOR BRONZE. G OL D PLATED INSULATOR - TEFLON PER M I L - P - 19^68 GA SKE T - SILICONE RUBBER, C OLOR RED

VDE 0660 BS 5424

Abstract: CA2SKE20 lc1-ee03 lc1sk0600 CA2SK-e20 CA2SK20 CA2SK LC1EC LC1-EC-03 CA2SK11
Contextual Info: Alternating Relays SKE File 8501 CATALOG CONTENTS Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Page Functional Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

diode SKE 1/06

Abstract: diode SKE 39 CA diode SKE 1/12 diode SKE 39 diode SKE 1/16 1-SKE 200 CA diode SKE 1/08 diode SKE 300A STUK010 diode 1.5ke 39A
Contextual Info: Transient voltage suppressor diodes. The plastic material carries U/L recognition 94V-0. 1.5KE/STUK0 Series. 1S00W. Case: DO-201AD/SMC Outline: 4/8 TYPE Unidirectional Axial Lead I S.M.D. 1.5KE 6.8 1.5KE 6.8A 1.5KE7.5 1.5KE7.5A 1.SKE8.2 1.5KE8.2A 1.5KE 9.1

5366 120 06

Abstract: 5363 670 06
Contextual Info: "RAPID" Series, Quick Disconnect PiN INSERT RECEPTACLES, SOCKET INSERT PLUGS AND CABLE CONNECTING PLUGS, PIN INSERT 100 °C 212 °F I.P. 50 I.P. 54 (1) •i . v Socket insert plug Cable connecting plug, pin insert NEW SECURE CONNECTORS for shell size 1 and 2

SC-X15111

Abstract: TPA150 SC-X15112 SCX-15111 333HXXX-X 028011 HDBB-XXX-X-250
Contextual Info: 3M”Heat Shrink Products Molded Shapes 9 3M Heat-Shrinkable Molded Shapes combine the advantages of quick, easy installation with high dielectric strength, mechanical toughness, and superior chemical and environmental resistance. Molded shapes offer important functional and cost-savings benefits for

SC-X15111

Contextual Info: 3M”Heat Shrink Products Molded Shapes Materials Molded shapes are available in a choice of cross-linked polymeric materials. Selection should be made according to the needs of the specific application. All materials used in 3M molded shapes are self-extinguishing, noncorrosive, and unaffected by common chemicals and

1N62* bidirectional 6.2

Abstract: 1.5KE160
Contextual Info: FAGOR ^ T ran sita! voltage supp w io tt diodêf The p lastic m aterial c a rrie s U L recognition 94V -0. 1N62C/1.SKE C Series. 1.500 W./l ms. expo. Plastic Case: DO-20LAE. Outline: 4 M axim um R e v e rse L e a k a g e Current Type W ^ Bidirectional /¿A

Contextual Info: s e m ik r d n Section 10: High Voltage Rectifiers V rrm V BR VvRMS Types (f a v If a v If n Toil Tamb =45V =75*0 =45cC A A A VF N Rthja Tamb V V V V °C/W HSKE S K V Vè B 6 000 7 500 2 500 H S K E 2500/1100-0,3 8 000 10 000 3 500 H S K E 3500/1550-0,3 12 000 15 000 5 000 H S K E 5000/2200-0,25

siemens rw 152

Contextual Info: SIEM ENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

JIS D 5403

Abstract: TMCX118100 sj 2038 appleton clamp 7665s scotchcast 92 7665-S-8 8462 "cross reference" TMCX8875 TMCX402400
Contextual Info: Splice Rejacketing 387 Splice Repair 390 3 M Safety Sock Grounding Kits, Shielded and Jacketed URD Cable 391 Sealing and Grounding 393 3/C Cable Breakout Boots and 3/C Phase Rejacketing System 395 Insulating and Sealing Compounds 408 Mounting Brackets 410

Contextual Info: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges

VT244A

Abstract: HYB3117805BSJ SOJ-28
Contextual Info: 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications

UPD6252

Abstract: IC-7580 toko s102 E2HD 7SI02 RBS 2111 AS15 G IC as15 G D75516 ST 9527
Contextual Info: APPLICATION NOTE ▲ Fanis* N fc L RA75X ASSEMBLER PACKAGE 111 STRUCTURED ASSEMBLER PREPROCESSOR Document No. EEA—12Ö3 0 .0 . No. EE A—803 Date Published April 199IP Printed in Japan APPLICA T/ON NOTE NEC RA75X ASSEMBLER PACKAGE STRUCTURED ASSEMBLER PREPROCESSOR

uPD754144

Abstract: uPD754244
Contextual Info: µPD754144, 754244 4-BIT SINGLE-CHIP MICROCONTROLLERS µ PD754144 µ PD754244 1996 Document No. U10676EJ2V0UM00 2nd edition Date Published April 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

uPD754144

Abstract: uPD754244 MPD754244
Contextual Info: mPD754144, 754244 4-BIT SINGLE-CHIP MICROCONTROLLERS m PD754144 m PD754244 1996 Document No. U10676EJ2V0UM00 2nd edition Date Published April 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

0C062

Abstract: OC062 0C032 SKE 502 triac MAC 97 AB SKE 1/17 1E71 238-356 0C026 OC025
Contextual Info: APPLICA T/ON NOTE SEC ß PD17104 APPLICATION FÜR ELECTRIC FAN ! Document No. tEA-1261 0.0 . No. lEA-677 Date Published August 1990P Printed in Japan APPLICA T/ON NOTE NEC /¿PD171 04 APPLICATION FOR ELECTRIC FAN NEC Corporation 1990 No p a rt o f th is d o cu m e n t m ay be copied o r reproduced in any fo rm o r by any means w ith o u t th e p rio r w ritte n

Contextual Info: SIEMENS 4M x 72-Bit Dynamic RAM EDO-Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation

Contextual Info: SIEMENS 16M x 72-Bit Dynamic RAM EDO- Module ECC - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 16:1 M u ltip le x e r T h e M C 1 0 E /1 0 0 E 1 6 4 is a 16:1 m ultiplexer with a differential output. T h e M C10E164 M C100E164 select inputs SELO, 1, 2 , 3 control w hich o n e of the sixteen d a ta inputs ( A 0 - A 1 5 ) is propagated to the output.

Contextual Info: SIEMENS 8M x 72-Bit Dynamic RAM EDO-Module ECC - Module HYM 72V8025GS-50/-60 HYM 72V8035GS-50/-60 168 pin buffered DIMM Module Prelim inary Inform ation • 168 Pin JED EC Standard, Buffered 8 Byte Dual In-Line M em ory M odule • 2 bank 8 M x 72 organisation

btm-220

Abstract: MKL series diode SKE 1/10 similar ic xa 222 uPD754264 nec Semiconductors Selection Guide U12287E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SKE 1/17

Abstract: PC10 PD17015 nec 1026
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD17015 4-BIT SINGLE-CHIP MICROCONTROLLER FOR PORTABLE RADIOS The µPD17015 is a super low-voltage 4-bit single-chip microcontroller for digital tuning applications. It features a prescaler that can operate at frequencies up to 220 MHz, a PLL synthesizer, and an LCD controller/driver, all

Contextual Info: User’s Manual µPD754202 4-bit Single-Chip Microcontrollers Document No. U11132EJ2V1UM00 2nd edition Date Published April 2003 N CP (K) c Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and