1 K OHM Search Results

CY7C136E

Abstract: CY7C131AE-15JXI CY7C136AE-55NXI
Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

27934

Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)

Contextual Info: CY7C1381D CY7C1383D, CY7C1383F 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM 18-Mbit (512 K × 36/1 M × 18) Flow Through SRAM Features Functional Description • Supports 133 MHz bus operations ■ 512 K × 36 and 1 M × 18 common I/O ■ 3.3 V core power supply (VDD)

diode wb2

Abstract: EBL1 VG-230
Contextual Info: EBL 1 EBL 1 Duodiode-Endpenthode Die E B L 1 ist die K om bination einer Duodiode m it einer steilen 9-W attE ndpenthode, die zusam m en in einem K olben u ntergebracht sind und eine gem einsam e K athode benutzen. D er Penthodenteil h a t E igen­ schaften, die sich vollkom m en m it denjenigen der steilen E ndpenthode

6637S-1-102

Abstract: 6637S-1-502 H-38-2 6637S-1-103 H-37-2
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ Bushing mount Excellent resolution High rotational life Non-standard features and specifications available 6637 - Precision Potentiometer Electrical Characteristics1 Product Dimensions Standard Resistance K to 100 K ohms

cy7c1019d-10

Contextual Info: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion

6534S-1-102

Abstract: 6534S-1-103 6534S-1-202 6534S-1-203 6534S-1-502 6534S-1-503
Contextual Info: Features • ■ ■ ■ Servo mount Shaft support by front and rear precision ball bearings Non-standard features and specifications available Gangable up to 10 cups 6534 - 7/8 ” 22 mm Precision Potentiometer Electrical Characteristics1 Standard Resistance K to 100 K ohms

6bk5

Abstract: 25BK5 tube 6Bk5 12bk5 6bk5 tube j-12000 4000 watts power amplifier circuit diagram general electric
Contextual Info: 6BK5 12BK5 6 B K 5 -1 2 B K 5 -2 5 B K 5 25BK5 Page 1 ‘ beam pentode tubes DESCRIPTION AND RATING The 6BK5 is a miniature beam pentode designed primarily for use in the audio-frequency power output stage of television and radio receivers in which only small driving voltages are available. Features of the tube include ex­

CY7C1370DV25-167BZI

Contextual Info: CY7C1370DV25 CY7C1372DV25 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • ❐ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

Contextual Info: CY7C1370D, CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

Contextual Info: CY7C1018DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1018CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

Contextual Info: Model 128 www.vishay.com Vishay Spectrol 1 1/16" 27 mm Single Turn Conductive Plastic Precision Potentiometer FEATURES • 1 1/16" round • Bushing mount and servo mount types • Designed for high reliability applications • Ohmic value range: 500  to 50 k

CY14B101P-SFXIT

Contextual Info: CY14B101P 1-Mbit 128 K x 8 Serial SPI nvSRAM with Real Time Clock 091 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock Features • ■ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: HV18 Supertex inc. 8-Channel High Voltage Analog Switch Ordering Information Package Options Vpp ^NN VsiG Die +80V -80V 130V P-P H V 18 1 6 X 36-pin Leaded Ceramic Chip Carrier H V 18 1 6 C S Up to 130V p e a k to p ea k o u tp u t sw itchin g O u tp u t O n -re sista n ce typ ica lly 40 ohm s

XFTPRH3015-4R7M

Abstract: 208H
Contextual Info: 1. M ech an ical D im en sio n s: 2. S c h e m a tic : C 1.55 Max 3. E le c tr ic a l S p e c ific a tio n s: 25°C |-— 3 .6 0 — OCL: 4 .7 u H ± 2 0 % I.O K H z Q: 10 Min © 1 0 0 K H z DOR: 0 .1 3 2 ± 2 0 % 1V 1V Ohms Isat: 0.95A dc Based on 30% Typ Drop in OCL

40c208

Contextual Info: Silicon Controlled Rectifier Series 40C D im In c h e s M in im u m A B C E F G H J K M N P R S Note 1: 1 / 4 - 2 8 U N F-3A Forward k Reverse Repetitive Blocking M a xim um N o te s 1 .677 -1.200 .427 .115 - .200 .120 - .065 .145 .055 .025 17.20 .685

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY7C1380D, CY7C1380F CY7C1382D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 250 MHz ■ Available speed grades are 250, 200, and 167 MHz ■ Registered inputs and outputs for pipelined operation

Contextual Info: Schem atic: RX TX Electrical Specifications: @25°C solation: 1 500 V rm s PR ta SEC solation: 500 V rm s (TX to RCV) Turns Ratio: 1 CT:2CT ±2 % (TX) 1 CT PRI OCL: 1 40u H ± 2 0 % O IÜ Ü K H z 5DmV & C w /w : BpR M a xim u m (3>100KHz 5 0 m V PRI LL: 0 .3 0uH M a xim um @ 1 0 0 K H z 5 0 m V 5EC

2412A

Abstract: 100 hfk 7j7 L6568 LC6500 LC6568 LC6568D EVA800-TB6568 9071J CSB800K 6568H
Contextual Info: O rd e rin g n u m b e r: E N 2 4 1 2 A CMOS LSI SANK \ No. 2412A i LC 6568D, 6568H 8K-Byte R O M -C ontained Single-Chip 4-Bit Microcomputers with FLT/LED Drivers, C on iparator Input 1-_ / •r / "%*. %¡_ ■■■. The LC6568D/H are single-chip 4-bit microcomputers that contain an 8 K-byte RQflil, 1 K-bj.ihave 64 pins.

Contextual Info: DS2422/DS2423 PRELIMINARY D A L L A S s e m ic o n d u c to r DS2422/DS2423 1 K /4 K—Bit 1—W ir ^^ R A M with C ounters FEATURES PIN ASSIGNM ENT • 4096 bits of SRAM DS2423 , 1024 bits with the DS2422 TS O C PACKAGE • Four 32-bit read-only counters (DS2423), three