1 FP SMD Search Results

M5M51008AP

Abstract: M5M5I008AP M5M51008AVP
Contextual Info: MITSUBISHI LSIs M5M51008AP, FP, VP, RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 -b it which are

M5M51008AP

Abstract: RV-12L
Contextual Info: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WQRD B Y 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 - bit which are

M5M51008BVP

Abstract: M5M51008BP MARK S2
Contextual Info: 1997-4/1 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-10LL-I 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Power supply current Type name M5M51008BP,FP,VP,RV,KV,KR-55L

M5M51008AVP

Abstract: M5M51008AP
Contextual Info: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-55L,-55LL 1048576-BIT 131072-WQRD BY8-BIT CM0S STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 85 7 6 -b it CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance triple polysilicon CMOS

Contextual Info: MITSUBISHI LSIs M5M51008BP,FP,VP,RV-55L, -70L, -10L, -55LL,-70LL,-1 OLL 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008BP,FP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The

LQFP80

Contextual Info: LQ FP 80 SOT315-1 LQFP80; Reel pack; SMD, 13" Q1/T1 Standard product orientation Orderable part number ending ,118 or J Ordering code 12NC ending 118 Rev. 1 — 15 April 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape

cu marking code diode

Abstract: international smd marking code
Contextual Info: BAT760WS SCHOTTKY BARRIER DIODE PINNING Features • Ultra high-speed switching • Very low forward voltage • Very small SMD plastic package DESCRIPTION PIN 1 Cathode 2 Anode 2 1 FP Applications • Ultra high-speed switching • Voltage clamping • Protection circuits

cu marking code diode

Abstract: 1 Fp smd code smd schottky diode marking BP
Contextual Info: BAT760WS SCHOTTKY BARRIER DIODE PINNING Features • Ultra high-speed switching • Very low forward voltage • Very small SMD plastic package DESCRIPTION PIN 1 Cathode 2 Anode 2 1 FP Applications • Ultra high-speed switching • Voltage clamping • Protection circuits

Contextual Info: 8 LQ FP 4 SOT313-2 LQFP48; Reel pack; SMD, 13", Turned Q2/T3 Standard product orientation Orderable part number ending ,128 or HP Ordering code 12NC ending 128 Rev. 1 — 24 April 2013 Packing information 1. Packing method Printed plano box Barcode label

Contextual Info: 64 LQ FP SOT314-2 LQFP64; Reel pack; SMD, 13" Q1/T1 Standard product orientation Orderable part number ending ,118 or J Ordering code 12NC ending 118 Rev. 1 — 15 April 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape

Contextual Info: 8 LQ FP 4 SOT313-2 LQFP48; Reel pack; SMD, 13" Q1/T1 Standard product orientation Orderable part number ending ,118 or J Ordering code 12NC ending 118 Rev. 1 — 15 April 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape

P2NC70

Abstract: STD1NC70Z STD1NC70Z-1 STD1NC70ZT4 STP2NC70Z STP2NC70ZFP p2nc70zfp Zener diode smd marking T4 D1NC70Z
Contextual Info: STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 • ■ ■ ■ ■ VDSS RDS on 700 700 700 700 < 8.5 < 8.5 < 8.5 < 8.5

d1nc7

Abstract: Zener diode smd marking T4 STD1NC70Z STD1NC70Z-1 STD1NC70ZT4 STP2NC70Z STP2NC70ZFP p2nc70z p2nc70zfp smd zener diode T4
Contextual Info: STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 • ■ ■ ■ ■ VDSS R DS on 700 700 700 700 < < < < V V V V 8.5 Ω

M38510/10101

Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
Contextual Info: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC

1 Fp smd

Abstract: ds-115 SMD CRYSTAL Ceramic smd diode ED smd transistor LY resistance to soldering heat J-STD-020C eCERA eCERA crystal
Contextual Info: FP Series | Legacy NKS7 Series 7.0 x 5.0mm Miniature Quartz Crystal Ceramic SMD FP Frequency Range: • 6.0000 MHz to 56.0000 MHz Fundamental • 30.0000+ MHz to 56.0000 MHz (3rd Overtone) Temperature Range: • Operating: –20 to +70°C, -40 to +85°C

KD 2.d smd transistor

Contextual Info: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V

hakko FR801

Abstract: hakko
Contextual Info: SMD Rework Station Î14MMÏF R - 8 0 1 PS • B T h e air o u tle t is p ro vid e d w ith a new m ech a n ism to red u ce the te m p e ra tu re irre g u la rity, S u pplies hot a ir at a stable te m p e ra tu re . ■ C o m es w ith an a irflow m e te r to a llo w m ore accu ra te

HC6856

Contextual Info: Military & Space Products 32K x 8 STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 µm Process Leff = 0.65 µm • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(SiO2)

Contextual Info: Honeywell Military & Space Products HC6856 32K x 8 STATIC RAM FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Bulk 0.8 urn Process Lelf = 0.65 urn • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(S i02)

CDIP2-T28

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

HX6256

Abstract: D-10
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

smd transistor NJ

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

A42MX16 datasheet

Abstract: 240 pin rqfp drawing Actel A40MX04 SMD TRANSISTOR w18 A42MX36 smd diode wd v3 5252 F 1009 "integrated circuit" transistor smd w16 a42mx A42MX09
Contextual Info: v 3. 0 40MX and 42MX Families FPGAs Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM