1 AMP FET SWITCH Search Results

G3VM-61GR1

Abstract: g3vm61gr1
Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant

Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant

Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant

G3VM-61GR1

Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M F T 1 N 1 0 E Motorola Preferred Device M EDIUM POW ER TM O S FET 1 AMP 100 VOLTS This advanced E-FET is a TMOS Medium Power MOSFET

Contextual Info: IVC102 B U R R -B R O W N I 1 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION • PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for

Contextual Info: Ordering number : EN 2 3 9 1 2SK771 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications . Variable resistors, analog switches, AF amp, constant-current circuit Features . Adoption of FBET process . Very small-sized package permitting sets to be made smaller and slimmer

2SK303

Contextual Info: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and

DS21912

Abstract: MCP1601 MCP1612 MCP1630 charger buck MHz "network interface cards" MCP7384
Contextual Info: MCP1612 1 Amp, 1.4 MHz Synchronous Buck Regulator Product Summary: The MCP1612 is a fully integrated, current-mode controlled, synchronous buck regulator containing both the power FET and the synchronous switch. Utilizing an external resistor divider allows the output voltage of this

Contextual Info: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V

Contextual Info: HTMOSTM High Temperature Products Advanced Information HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics

et 1102

Abstract: downhole
Contextual Info: HTMOSTM High Temperature Products Advanced Information HTNFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics

downhole

Abstract: HTNFET
Contextual Info: HTMOSTM High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET HTNFET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics

HTMOS

Abstract: HTANFET 30Q10
Contextual Info: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V

KSK30OBU

Contextual Info: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSK30

Abstract: NF05
Contextual Info: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSK117

Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSK30

Contextual Info: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted

downhole

Contextual Info: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V

2SK1069

Abstract: 2SK771
Contextual Info: O rd e rin g n u m b e r:EN 2 7 4 9 2 S K 1 06 9 No.2749 i samo i N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications • Low-frequency general-purpose amplifiers • Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current

Contextual Info: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1

2SA830

Contextual Info: h 7 > y ^ ^ / T ransistors 2SA830/2SA830S 2SA830 2 3 / ^ 3 3 Q pnp 3 v u = i> & ^ < 7 ^ > ^ ffl/M e d iu m Power Amp. & Switching Epitaxial Planar PNP Silicon Transistors • ^ f i ^ S O / D i m e n s i o n s U nit : mm 1) ? - U > h > t i ^ T g h FET ' * 5 o

1N10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ransistor Medium Power Field Effect N-Channel Enhancement Mode Silicon Gate TMOS E-FET “ SOT-223 for Surface Mount M o to ro la P r e fe r re d D e v ic e M E D IU M P O W E R T M O S FET 1 AMP 100 V O LTS T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T