1 AMP FET SWITCH Search Results
1 AMP FET SWITCH Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7662MTV/B | Rochester Electronics LLC | ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS |
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| ICL7660SMTV | Rochester Electronics LLC | ICL7660 - Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8 |
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| LM1578AH/883 | Rochester Electronics LLC | LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) |
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| DG201AK/B | Rochester Electronics LLC | DG201A - 15.0V SPST CMOS Switch |
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| IH5012CDE | Rochester Electronics LLC | IH5012 - SPST, 4 Func, 1 Channel, CDIP16 |
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1 AMP FET SWITCH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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G3VM-61GR1
Abstract: g3vm61gr1
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g3vm-61gr1x302-e-1g3vm61gr1 | |
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Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant |
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g3vm-61gr1x302-e-1 | |
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Contextual Info: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant |
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g3vm-61gr1k178-e-01 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M F T 1 N 1 0 E Motorola Preferred Device M EDIUM POW ER TM O S FET 1 AMP 100 VOLTS This advanced E-FET is a TMOS Medium Power MOSFET |
OCR Scan |
ot-223mmft1n10e | |
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Contextual Info: IVC102 B U R R -B R O W N I 1 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION • PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for |
OCR Scan |
ivc102 | |
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Contextual Info: Ordering number : EN 2 3 9 1 2SK771 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications . Variable resistors, analog switches, AF amp, constant-current circuit Features . Adoption of FBET process . Very small-sized package permitting sets to be made smaller and slimmer |
OCR Scan |
4237ta2sk771 | |
2SK303Contextual Info: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and |
OCR Scan |
en856f2sk303 | |
DS21912
Abstract: MCP1601 MCP1612 MCP1630 charger buck MHz "network interface cards" MCP7384
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mcp1612ds21924ads21912mcp1601+4 | |
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Contextual Info: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V |
OCR Scan |
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Contextual Info: HTMOSTM High Temperature Products Advanced Information HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics |
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et 1102
Abstract: downhole
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et 1102downhole | |
downhole
Abstract: HTNFET
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downholehtnfet | |
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Contextual Info: HTMOSTM High Temperature Products Advanced Information HTNFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics |
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Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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ksk117 | |
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downholeContextual Info: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V |
OCR Scan |
downhole | |
2SK1069
Abstract: 2SK771
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OCR Scan |
2sk1069-applied2sk10692sk771 | |
sony transmitter
Abstract: CXG7001FN
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cxg7001fn26-pin150mahsof-26p-01+1 | |
BCR108S
Abstract: BG5412K FET marking code
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bg5412kot363bcr108sfet marking code | |
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Contextual Info: BG5412K Dual N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners 4 5 6 • Two AGC amplifiers in one single package, with on-chip internal switch 1 2 3 • Only one switching line to control both FETs • Integrated gate protection diodes |
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bg5412kot363 | |
Hitachi DSA00279Contextual Info: HA16116FP/HA16121FP Switching Regulator for Chopper Type DC/DC Converter Description HA16116FP and HA16121FP are dual-channel PWM switching regulator controller ICs for use in choppertype DC/DC converters. This IC series incorporates totem pole gate drive circuits to allow direct driving of a power MOS FET. The |
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ha16116fp/ha16121fpha16116fpha16121fphitachi dsa00279 | |
XR10K
Abstract: AH5020CJ AH5020C J08A LF13201 LF13202 LF13331 LF13332 LF13333 H5020
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OCR Scan |
ah5020ctl/h/5166-17tl/h/5166-18ahs020+13 | |
MAX455 video
Abstract: MAX408
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OCR Scan |
max456max463100mhzmax440+7 | |
C2012JB
Abstract: 2SW1 BD9012KV
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bd9012kv1200khzvqfp48c1500pcs+2 | |
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Contextual Info: TECHNICAL NOTE Large Current External FET Controller Type Switching Regulators High-frequency Step-down Switching Regulator Controller type High temperature operating Now available ESD Resistance Now available BD9850FVM Dual-output Step-up, Negative, Step-down |
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bd9850fvmbd9851efvhtssop-b20 | |