CJ3139KW
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JCET Group
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Single P-Channel Power MOSFET with -20V drain-source voltage, -0.66A continuous drain current, 430mΩ max RDS(on) at VGS = -4.5V, and SOT-323 package for high-side switching and load power applications. |
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CJBA3139K
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JCET Group
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P-Channel MOSFET in DFN1006-3L surface mount package, 20V drain-source voltage, -0.66A continuous drain current, 520mΩ typical RDS(on) at -4.5V gate drive, ESD protected, suitable for power switching and battery management applications. |
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CJX3139K
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JCET Group
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Dual P-Channel MOSFET in SOT-563 package with -20V drain-source voltage, 520mΩ typical on-resistance at -4.5V VGS, and -0.66A continuous drain current, designed for high-side switching and load power applications. |
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CJ3139KDW
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JCET Group
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Dual P-Channel Power MOSFET in SOT-363 package with -20V drain-source voltage, -0.66A continuous drain current, low on-resistance of 430mΩ at VGS=-4.5V, and fast switching speed for high-side load switching applications. |
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AK3139K
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AK Semiconductor
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P-Channel MOSFET in SOT-723 package with -20 V Drain-Source Voltage, continuous drain current of -0.66 A, and low RDS(on) of 430 mΩ at VGS = -4.5 V, suitable for load switching and battery management in portable electronics. |
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CJAA3139K
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JCET Group
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P-Channel MOSFET in surface mount package with -20V drain-source voltage, low RDS(on) of 520mΩ at -4.5V gate drive, ESD protected, suitable for load switching and battery management in portable electronics. |
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CJ3139KA
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JCET Group
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P-Channel MOSFET in SOT-723 package with -20 V drain-source voltage, -0.66 A continuous drain current, 150 mW power dissipation, and low RDS(on) for surface mount applications. |
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CJBB3139K
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JCET Group
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P-Channel MOSFET in DFN1006-3L-A surface mount package, 20V VDS, -0.66A continuous drain current, 520mΩ RDS(on) at -4.5V VGS, ESD protected, suitable for load switching and battery management in portable electronics. |
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CJ3139K
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JCET Group
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P-Channel MOSFET in SOT-23 surface mount package with -20 V drain-source voltage, -0.66 A continuous drain current, low RDS(on) of 430 mΩ at VGS = -4.5 V, and suitable for low logic level gate drive applications. |
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SL3139K
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SLKOR
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CJE3139K
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JCET Group
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P-Channel MOSFET in SOT-523 package with -20V drain-source voltage, 520mΩ typical on-resistance at -4.5V gate drive, suitable for load switching and battery management applications. |
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CJ3139KW
