JMTP110N06D
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-channel enhancement mode power MOSFET in SOP-8 package, 60V drain-source voltage, 11A continuous drain current, RDS(on) less than 14mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency. |
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JMTP110N06A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Enhancement Mode Power MOSFET JMTP110N06A with 60V drain-source voltage, 12A continuous drain current, RDS(on) less than 12mΩ at VGS=10V, and low gate charge, suitable for load switch, PWM, and power management applications. |
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CJAC110N03
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JCET Group
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CJAC110N03 N-Channel Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and ultra-low RDS(on) of 1.8mΩ at 10V VGS, designed for high-density switching applications in a PDFN 5×6-8L package. |
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CJAC110N03A
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JCET Group
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N-Channel Power MOSFET CJAC110N03A with 30V VDS, 110A continuous drain current, 1.8mΩ typical RDS(on) at 10V VGS, trench technology for low gate charge, and high power density in a PDFN5x6-8L package. |
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JMTK110N06A
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 55A, 8mΩ N-channel Power Trench MOSFET in TO-252-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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JMTP110N06D
