SLD30P10T
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Maplesemi
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P-Channel MOSFET with -100V drain-source voltage, -30A continuous drain current, 45mΩ typical RDS(on) at VGS = -10V, housed in TO-252 package, suitable for PWM, load switch, and power management applications. |
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NCE60P10K
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NCEPOWER
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P-Channel enhancement mode power MOSFET with -60V drain-source voltage, -10A continuous drain current, and RDS(ON) less than 120mΩ at VGS=-10V, suitable for load switch and PWM applications. |
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HSP80P10
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Huashuo Semiconductor
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P-Ch 100V Fast Switching MOSFET with -80A continuous drain current, 20mΩ typical RDS(ON), advanced trench technology, suitable for portable equipment and battery-powered systems. |
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ULC332510P10
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Leiditech
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ULC332510P10 is a low capacitance TVS array with 0.4pF typical junction capacitance, 3.3V reverse working voltage, and 5.5V clamping voltage at 1A, designed for ESD protection in high-speed data lines. |
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SMD2920P100TF
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SUNMATE electronic Co., LTD
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Surface mount PTC resettable fuse with holding current from 0.3A to 3.0A, working voltage up to 60V, low resistance, fast response, and high surge capability for over-current protection in electronic devices. |
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CJU30P10
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JCET Group
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P-Channel Power MOSFET CJU30P10 in TO-252-2L package with -100V drain-source voltage, -30A continuous drain current, and 38mΩ typical RDS(on) at -10V VGS, featuring low gate charge and trench technology for high efficiency. |
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NCE20P10J
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NCEPOWER
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NCE20P10J is a P-channel enhancement mode power MOSFET with -20V drain-source voltage, -10A continuous drain current, and low on-resistance of less than 18mΩ at VGS=-4.5V, suitable for load switching and PWM applications. |
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SLD_P20P10T
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Maplesemi
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N-channel -100V, -20A Power MOSFET with typical RDS(on) of 59mΩ at VGS = -10V, designed using TRENCH technology for low on-resistance, fast switching, and high energy pulse handling in PWM, load switch, and power management applications. |
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CJU30P10A
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JCET Group
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P-Channel Power MOSFET CJU30P10A in TO-252-2L package featuring -100V drain-source voltage, -30A continuous drain current, 48mΩ typical RDS(on) at -10V VGS, and advanced trench technology for low on-resistance and high cell density. |
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AK30P10S
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AK Semiconductor
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AK30P10S P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -10A continuous drain current, 34mΩ RDS(ON) at VGS=-4.5V, and low gate charge for load switch and PWM applications in SOP-8 package. |
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SK30P10
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Shikues Semiconductor
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VDS=-100V, ID=-30A, RDS(ON)<50mΩ @ VGS=-10V, <55mΩ @ VGS=-4.5V, trench technology, high density cell design. |
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HSH80P10
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Huashuo Semiconductor
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P-Ch 100V Fast Switching MOSFET with -80A continuous drain current, 20mΩ typical RDS(ON), advanced trench technology, 100% EAS guaranteed, suitable for portable and battery-powered systems. |
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SLD20P10T
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Maplesemi
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100V P-Channel MOSFET with -20A continuous drain current, 59mΩ typical RDS(on) at VGS = -10V, low input capacitance, fast switching, and 100% avalanche tested for reliable power management applications. |
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NCE30P10S
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -10A continuous drain current, 34mΩ typical RDS(ON) at VGS=-4.5V, and 21mΩ at VGS=-10V, suitable for load switch and PWM applications in SOP-8 package. |
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SLD30P10T
