NCE20P09S
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NCEPOWER
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NCE20P09S is a Channel Enhancement Mode Power MOSFET with -20V drain-source voltage, -9A continuous drain current, and low on-state resistance of 28mΩ at VGS=-4.5V, using advanced trench technology for high efficiency in surface mount applications. |
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NCE60P09K
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE60P09K with -60V drain-source voltage, -9A continuous drain current, and RDS(ON) less than 220mΩ at VGS=-4.5V, designed for load switch and PWM applications. |
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AK60P09S
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AK Semiconductor
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AK60P09S P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -9A drain current, and 32mΩ typical RDS(ON) at VGS=-10V, suitable for power switching and high frequency applications. |
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AK20P09S
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK20P09S with -20V drain-source voltage, -9A continuous drain current, 28mΩ RDS(ON) at VGS=-4.5V, and low gate charge, suitable for load switch and PWM applications in SOP-8 surface mount package. |
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AK60P09AS
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AK Semiconductor
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AK60P09AS P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -9A drain current, RDS(ON) less than 35mΩ at VGS=-10V, suitable for power switching and high frequency circuits. |
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NCE60P09S
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NCEPOWER
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NCE60P09S is a -60V, -9A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 32mΩ at VGS=-10V and low gate charge, suitable for high-frequency switching applications. |
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NCE60P09AS
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -9A continuous drain current, and RDS(ON) less than 35mΩ at VGS=-10V, utilizing trench technology for low on-resistance and high efficiency in power switching applications. |
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NCE20P09S
