SLM80P06T
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Maplesemi
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P-Channel MOSFET SLM80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, and 100W power dissipation in a DFN5x6 package. |
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SLF80P06T
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Maplesemi
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P-Channel MOSFET SLF80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, TO-220F package, suitable for power management and load switching applications. |
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SLP80P06T
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Maplesemi
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P-Channel MOSFET with -60V drain-source voltage, -80A continuous drain current, 17.5mΩ typical RDS(on) at VGS = -10V, TO-220C package, suitable for PWM, load switch, and power management applications. |
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SLD50P06T
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Maplesemi
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P-Channel 60V -50A Power MOSFET with RDSon typ 25mΩ at VGS -10V produced using advanced TRENCH technology for low onresistance fast switching and high energy pulse handling in avalanche and commutation modes |
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SLS30P06T
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Maplesemi
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P-Channel 60V -30A MOSFET with RDSon typ 27.5mΩ at VGS -10V, low Crss, fast switching, 100% avalanche tested, in SOP-8 package. |
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SLD30P06T
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Maplesemi
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P-Channel 60V -30A MOSFET with RDS(on) of 26mΩ at VGS = -10V, TO-252 package, designed for PWM, load switching, and power management applications. |
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SLM80P06T
