HSH100P06
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Huashuo Semiconductor
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HSH100P06 is a P-channel 60V trench MOSFET with 5.5 mΩ RDS(ON) at -10V VGS, 100A continuous drain current, low gate charge, and fast switching for synchronous buck converters. |
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AKZE20P06
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AK Semiconductor
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P-Channel 60-V MOSFET in TO-252 package with -40 A continuous drain current at 25 °C, rDS(on) of 61 mΩ at VGS = -10 V, and 72 mΩ at VGS = -4.5 V. |
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HSL10P06
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET HSL10P06 features high cell density trench technology, with a maximum RDS(ON) of 70 mΩ, continuous drain current of -10 A, and low gate charge, suitable for synchronous buck converter applications. |
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SLF80P06T
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Maplesemi
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P-Channel MOSFET SLF80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, TO-220F package, suitable for power management and load switching applications. |
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HSBA70P06
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -72A continuous drain current, 6mΩ RDS(ON), low gate charge, 100% EAS guaranteed, suitable for synchronous buck converters, in PRPAK5*6 package. |
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AK40P06S
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK40P06S with -40V drain-source voltage, -6A continuous drain current, and 45mΩ RDS(ON) at VGS=-10V, suitable for power switching and DC-DC converter applications. |
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NCE40P06J
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NCEPOWER
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P-Channel MOSFET with -40V drain-source voltage, -6A continuous drain current, RDS(ON) less than 33mΩ at VGS=-2.5V, advanced trench technology, low gate charge, suitable for load switching and PWM applications in a DFN2X2-6L package. |
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NCE30P06J
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -6.5A continuous drain current, 30mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switching and PWM applications in a DFN2X2-6L package. |
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HSP100P06
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -100A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 210W power dissipation in TO-220 package. |
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SLM80P06T
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Maplesemi
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P-Channel MOSFET SLM80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, and 100W power dissipation in a DFN5x6 package. |
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SLD30P06T
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Maplesemi
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P-Channel 60V -30A MOSFET with RDS(on) of 26mΩ at VGS = -10V, TO-252 package, designed for PWM, load switching, and power management applications. |
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SLD30P06G
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Maplesemi
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P-Channel 60V -30A MOSFET with typical RDS(on) of 30mΩ at VGS = -10V, featuring low gate charge, low Crss, and optimized for synchronous rectification and motor drive applications in a D-Pak package. |
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HSU70P06
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -70A continuous drain current, 7.5 mΩ typical RDS(ON), low gate charge, and 135W power dissipation in TO252 package. |
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NCE60P06S
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -6A continuous drain current, and 45mΩ typical RDS(ON) at VGS=-10V, housed in SOP-8 package. |
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SLD50P06T
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Maplesemi
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P-Channel 60V -50A Power MOSFET with RDSon typ 25mΩ at VGS -10V produced using advanced TRENCH technology for low onresistance fast switching and high energy pulse handling in avalanche and commutation modes |
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SLS30P06T
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Maplesemi
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P-Channel 60V -30A MOSFET with RDSon typ 27.5mΩ at VGS -10V, low Crss, fast switching, 100% avalanche tested, in SOP-8 package. |
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CJP50P06S
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JCET Group
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P-Channel MOSFET with -60V drain-source voltage, -50A continuous drain current, 25mΩ typical RDS(on) at -10V gate voltage, advanced trench technology for low on-resistance and high cell density, suitable for power management and battery-powered systems. |
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CJAC70P06
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JCET Group
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P-Channel Power MOSFET CJAC70P06 with -60V drain-source voltage, -70A continuous drain current, 7.6mΩ typical RDS(on) at -10V VGS, and 9.2mΩ at -4.5V VGS, designed for high-density switching applications. |
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CJAE10P06
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JCET Group
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P-Channel Power MOSFET CJAE10P06 with -60V drain-source voltage, -10A continuous drain current, 26mΩ typical RDS(on) at -10V VGS, housed in a DFNWB3×3-8L package for efficient heat dissipation and high-density applications. |
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NCE40P06S
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -6A continuous drain current, and 45mΩ typical RDS(ON) at VGS=-10V, suitable for power switching and DC-DC converter applications. |
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HSH100P06
