0P-06, Search Results
0P-06, Datasheets (24)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HSL10P06
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Huashuo Semiconductor | P-Ch 60V Fast Switching MOSFET HSL10P06 features high cell density trench technology, with a maximum RDS(ON) of 70 mΩ, continuous drain current of -10 A, and low gate charge, suitable for synchronous buck converter applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HSH100P06
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Huashuo Semiconductor | HSH100P06 is a P-channel 60V trench MOSFET with 5.5 mΩ RDS(ON) at -10V VGS, 100A continuous drain current, low gate charge, and fast switching for synchronous buck converters. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SLF80P06T
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Maplesemi | P-Channel MOSFET SLF80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, TO-220F package, suitable for power management and load switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AKZE20P06
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AK Semiconductor | P-Channel 60-V MOSFET in TO-252 package with -40 A continuous drain current at 25 °C, rDS(on) of 61 mΩ at VGS = -10 V, and 72 mΩ at VGS = -4.5 V. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HSBA70P06
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Huashuo Semiconductor | P-Ch 60V Fast Switching MOSFET with -72A continuous drain current, 6mΩ RDS(ON), low gate charge, 100% EAS guaranteed, suitable for synchronous buck converters, in PRPAK5*6 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK40P06S
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AK Semiconductor | P-Channel Enhancement Mode Power MOSFET AK40P06S with -40V drain-source voltage, -6A continuous drain current, and 45mΩ RDS(ON) at VGS=-10V, suitable for power switching and DC-DC converter applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE40P06S
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NCEPOWER | P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -6A continuous drain current, and 45mΩ typical RDS(ON) at VGS=-10V, suitable for power switching and DC-DC converter applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJU50P06
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JCET Group | P-Channel Power MOSFET with -60V drain-source voltage, -50A continuous drain current, 25mΩ typical RDS(on) at -10V gate-source voltage, available in TO-252-2L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK60P06S
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AK Semiconductor | P-Channel Enhancement Mode Power MOSFET AK60P06S with -60V drain-source voltage, -6A continuous drain current, and 45mΩ RDS(ON) at VGS=-10V, featuring advanced trench technology for low gate charge and high switching efficiency. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SLP80P06T
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Maplesemi | P-Channel MOSFET with -60V drain-source voltage, -80A continuous drain current, 17.5mΩ typical RDS(on) at VGS = -10V, TO-220C package, suitable for PWM, load switch, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HSH90P06
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Huashuo Semiconductor | P-Ch 60V Fast Switching MOSFET with -85A continuous drain current, 7.5mΩ RDS(ON), low gate charge, and 100% EAS guaranteed for synchronous buck converter applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SLD50P06T
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Maplesemi | P-Channel 60V -50A Power MOSFET with RDSon typ 25mΩ at VGS -10V produced using advanced TRENCH technology for low onresistance fast switching and high energy pulse handling in avalanche and commutation modes | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE60P06S
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NCEPOWER | P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -6A continuous drain current, and 45mΩ typical RDS(ON) at VGS=-10V, housed in SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SLS30P06T
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Maplesemi | P-Channel 60V -30A MOSFET with RDSon typ 27.5mΩ at VGS -10V, low Crss, fast switching, 100% avalanche tested, in SOP-8 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJP50P06S
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JCET Group | P-Channel MOSFET with -60V drain-source voltage, -50A continuous drain current, 25mΩ typical RDS(on) at -10V gate voltage, advanced trench technology for low on-resistance and high cell density, suitable for power management and battery-powered systems. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAE10P06
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JCET Group | P-Channel Power MOSFET CJAE10P06 with -60V drain-source voltage, -10A continuous drain current, 26mΩ typical RDS(on) at -10V VGS, housed in a DFNWB3×3-8L package for efficient heat dissipation and high-density applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HSP100P06
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Huashuo Semiconductor | P-Ch 60V Fast Switching MOSFET with -100A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 210W power dissipation in TO-220 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SLM80P06T
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Maplesemi | P-Channel MOSFET SLM80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, and 100W power dissipation in a DFN5x6 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE40P06J
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NCEPOWER | P-Channel MOSFET with -40V drain-source voltage, -6A continuous drain current, RDS(ON) less than 33mΩ at VGS=-2.5V, advanced trench technology, low gate charge, suitable for load switching and PWM applications in a DFN2X2-6L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE30P06J
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NCEPOWER | P-Channel Enhancement Mode MOSFET with -30V drain-source voltage, -6.5A continuous drain current, 30mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switching and PWM applications in a DFN2X2-6L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
0P-06, Price and Stock
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Infineon Technologies AG ISC800P06LMATMA1TRENCH 40<-<100V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ISC800P06LMATMA1 | Cut Tape | 9,364 | 1 |
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Buy Now | |||||
| ISC800P06LMATMA1 | Digi-Reel | 9,364 | 1 |
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Buy Now | ||||||
| ISC800P06LMATMA1 | Tape & Reel | 9,364 | 5,000 |
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Buy Now | ||||||
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ISC800P06LMATMA1 | 1,938 |
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Buy Now | |||||||
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ISC800P06LMATMA1 | 53 Weeks | 5,000 |
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Get Quote | ||||||
Infineon Technologies AG IPD900P06NMATMA1MOSFET P-CH 60V 16.4A TO252 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD900P06NMATMA1 | Digi-Reel | 7,865 | 1 |
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Buy Now | |||||
| IPD900P06NMATMA1 | Tape & Reel | 7,865 | 2,500 |
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Buy Now | ||||||
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IPD900P06NMATMA1 | 2,559 | 1 |
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Buy Now | ||||||
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IPD900P06NMATMA1 | 16 Weeks | 2,500 |
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Get Quote | ||||||
Goford Semiconductor G700P06D3MOSFET P-CH 60V 18A 32W 70m(max) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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G700P06D3 | Tape & Reel | 5,000 | 5,000 |
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Buy Now | |||||
Goford Semiconductor G230P06KMOSFET P-CH 60V 60A TO-252 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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G230P06K | Tape & Reel | 2,500 | 2,500 |
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Buy Now | |||||
| G230P06K | Digi-Reel | 1,171 | 1 |
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Buy Now | ||||||
| G230P06K | Tape & Reel | 1,171 | 2,500 |
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Buy Now | ||||||
| G230P06K | Cut Tape | 1,171 | 1 |
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Buy Now | ||||||
IXYS Corporation IXTH120P065TMOSFET P-CH 65V 120A TO247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTH120P065T | Tube | 474 | 1 |
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Buy Now | |||||
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IXTH120P065T | Tube | 90 | 30 |
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Buy Now | |||||