NCE60P05R
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, RDS(ON) less than 65mΩ at VGS=-10V, low gate charge, suitable for load switch and PWM applications. |
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CJQ60P05
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JCET Group
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P-Channel MOSFET with -60V drain-source voltage, -5A continuous drain current, 61mΩ typical RDS(on) at -10V VGS, available in SOP8 package. |
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SMD2920P050TF
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SUNMATE electronic Co., LTD
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Surface mount PTC resettable fuse with holding current from 0.3A to 3.0A, working voltage up to 60V, low resistance, fast response, and high surge capability for over-current protection in electronic devices. |
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NCE60P05BY
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, 65mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications in SOT-23-3L package. |
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AK20P05Y
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK20P05Y with -20V drain-source voltage, -5A continuous drain current, 25mΩ RDS(ON) at VGS=-4.5V, and 40mΩ at VGS=-2.5V, available in SOT23-3L surface mount package. |
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NCE20P05J
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NCEPOWER
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20V P-channel MOSFET with -5A continuous drain current, 65mΩ typical RDS(ON) at VGS=-4.5V, advanced trench technology, low gate charge, suitable for load switching and PWM applications in DFN2X2-6L package. |
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NCE20P05Y
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NCEPOWER
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NCE20P05Y is a -20V, -5A channel enhancement mode power MOSFET with trench technology, offering low RDS(ON) of 25mΩ at VGS=-4.5V, 40mΩ at VGS=-2.5V, and gate charge optimized for load switch and PWM applications in SOT-23-3L package. |
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AK40P05Y
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AK Semiconductor
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AK40P05Y P-Channel Enhancement Mode MOSFET with -40V drain-source voltage, -5.3A continuous drain current, RDS(ON) less than 85mΩ at VGS=-10V, and low gate charge for power switching and DC-DC converter applications. |
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SMD1210P050TF
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SUNMATE electronic Co., LTD
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Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices, featuring low resistance, fast response, and high voltage surge capability. |
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NCE40P05Y
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE40P05Y with -40V drain-source voltage, -5.3A continuous drain current, 85mΩ RDS(ON) at VGS=-10V, and 125mΩ at VGS=-4.5V, housed in SOT-23-3L package. |
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AK40P05S
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AK Semiconductor
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AK40P05S P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -5.3A continuous drain current, 80mΩ typical RDS(ON) at VGS=-10V, and 120mΩ maximum RDS(ON) at VGS=-4.5V, housed in SOP-8 package. |
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AK60P05BY
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AK Semiconductor
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AK60P05BY P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, RDS(ON) less than 65mΩ at VGS=-10V, suitable for load switch and PWM applications. |
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AK60P05AS
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK60P05AS with -60V drain-source voltage, -5A continuous drain current, RDS(ON) less than 65mΩ at VGS=-10V, low gate charge, and SOP-8 package for efficient heat dissipation. |
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NCE60P05N
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -5A continuous drain current, 65mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications in SOT23-6L package. |
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NCE40P05S
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -40V drain-source voltage, -5.3A continuous drain current, 80mΩ RDS(ON) at VGS=-10V, and 120mΩ at VGS=-4.5V, housed in SOP-8 package. |
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NCE60P05R
