JMTK100N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 40A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 10m ohm at VGS = 10V, TO-252-3L package, designed for power management and load switching applications. |
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JMTQ040N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 60A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.0mΩ at VGS=10V and 6.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. |
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JMTQ120N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 18A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 11.8mΩ at VGS=10V and 19.1mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. |
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JMTK120N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 12.2mΩ at VGS = 10V and 20.5mΩ at VGS = 4.5V, featuring advanced trench technology, low gate charge, and TO-252-3L package. |
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SKQ90N03AD
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Shikues Semiconductor
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N-Channel 30V MOSFET, ESD Protected, RDS(ON)≦4.8mΩ@VGS=10V, RDS(ON)≦9mΩ@VGS=4.5V, 2000V ESD. |
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JMTV120N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 12A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 12mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and DFN2020-6L package. |
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CJAC150N03A
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JCET Group
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30V N-Channel Power MOSFET in PDFN 5x6-8L package with 150A continuous drain current, 1.4mΩ typical RDS(on) at 10V VGS, trench technology for low gate charge and ultra-low on-resistance. |
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JMTG100N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 30A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 9.8m ohm at VGS = 10V, available in PDFN5x6-8L package, suitable for power management and load switching applications. |
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CJAC110N03A
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JCET Group
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N-Channel Power MOSFET CJAC110N03A with 30V VDS, 110A continuous drain current, 1.8mΩ typical RDS(on) at 10V VGS, trench technology for low gate charge, and high power density in a PDFN5x6-8L package. |
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JMTQ240N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 12A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 19.4m ohm at VGS = 10V and 27.7m ohm at VGS = 4.5V, housed in a PDFN3x3-8L package, suitable for power management and load switching applications. |
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JMTG040N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 5.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested, in PDFN5x6-8L package. |
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JMTV240N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 10A N-channel Enhancement Mode Power MOSFET in DFN2020-6L package with RDS(ON) less than 20.3mΩ at VGS=10V and low gate charge, suitable for power management and load switching applications. |
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JMTK50N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 50A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6 mΩ at VGS = 10V, advanced trench technology, low gate charge, and TO-252-3L package. |
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JMTQ100N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 11.2mΩ at VGS=10V, available in PDFN3x3-8L package, suitable for load switching, PWM, and power management applications. |
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JMTK100N03A
