0N 33 25 Search Results

r4373

Contextual Info: JANSR2N7400 33 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS 0N = 0.4400 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

diode PJ 65 MG

Abstract: 5a 12v regula
Contextual Info: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: f Z 7 SGS-TTiOMSON Ä T# MK4505M/S -25/33/50 VERY HIGH-SPEED CMOS CLOCKED FIFO • 1 0 2 4 x 5 ORGANIZATION ■ VERY HIGH PERFORMANCE P art No C ycle Tim e Cycle Frequency A ccess Tim e 4 5 0 5 -2 5 25n s 40M Hz 15ns 4 5 0 5 -3 3 33n s 30M Hz 2 0n s 4 5 0 5 -5 0

shell dep standard 32

Contextual Info: 4 DRAWING MADE •n NG IN THIRD 3 ANGLE 15 U N P U B L IS H E D . COPYRIGHT 19 2 PROJECTION RCLCAGCD BY A M P TOR PU D L1 C A T 1 0N INCORPORATED. BD INTERNATIONAL RIGHTS RESERVED. REV I 5 1 0N5 48 ZONE LTR DESCR]PT]ON REV g REDRAWN ECN BD3360 FI -33. 32[1

Contextual Info: JANSR2N7402 33 M ÄRE» Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Features Description • 3A, 500V, rDS 0N = 2.70Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r ha s d e v e lo p e d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s

HD1-6600

Abstract: HD1-6600-2 dielectric tester dc 24VDC power supply circuit diagram HD-6600 VDC-20
Contextual Info: 33 HARIRIS HD-6600 Q U A D POW ER STROBE Features Logic Diagram H IG H D R IV E C U R R E N T - 1 5 0 m A H IG H S P E E D 5 0n s T Y P IC A L T T L C O M P A T IB L E IN P U T S D IE L E C T R IC IS O L A T IO N Q U A D M O N O L IT H IC C O N S T R U C T IO N

Contextual Info: ST 22/36 Axial Leads 630 V- . 10,000 VAPPLICATIONS Non-inductive, insulated capacitor. Cylindrical, axial leads, polyester wrapped, epoxy resin sealed. L 25 0.984 min. Some examples of use: High voltage filtering, TV line recuperation. SPACELAB qualified.

Contextual Info: ISOCOH COMPONENTS LTD WM MfiflbSlO 0000236 b • ISO 4SE P OPTOELECTRONIC SWITCHES T R A N S IST O R FA M ILY VF Ip = 60mA 'r V b v ceo lg=1m A 5V Test b v eco lc= IOOjiA V c e =25V lc 0N lc 0N lc °N Ip = 5mA Ip = 20mA Ip = 30mA V ce = 5V VCE = 5V VCE SAT|

Contextual Info: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I RATED CAP ITEM CODE ※L VOLTAGE F ECQE2Al03R 0 F 250VAC O . 01 12 .5 1 1 1 1 112A123ROF O . 012 1 1 1 1 112A153ROF O . 015 1 1 1 1 1 1 2A183ROF O . 018 1 1 1 1 1 1 2A223R 0 F O . 022 1 1 1 1

CPM72B

Contextual Info: S9 10/13/18/27/31 CPM72 — Axial Leads 100/250/400/630 VAPPLICATIONS Non-inductive, insulated capacitor for professional use. Cylindrical axial leads, polyester wrapped, epoxy resin sealed. 25 0.984 min. L Some examples of use: Oscillating circuit, LF filter, coupling and decoupling, frequency

CPM72B

Abstract: CPM72 300nF CAPACITOR capacitor 22 nF nf 18 358 400 nf capacitor
Contextual Info: S9 10/13/18/27/31 CPM72 — Axial Leads 100/250/400/630 VAPPLICATIONS Non-inductive, insulated capacitor for professional use. Cylindrical axial leads, polyester wrapped, epoxy resin sealed. 25 0.984 min. L Some examples of use: Oscillating circuit, LF filter, coupling and decoupling, frequency

pa68h

Abstract: YTFP150 PA63H NEC PA63H UPA33A YTF840 YTFP450 UPA50A PA71A pamt
Contextual Info: - 170 - f £ € tt £ m & m it vm * 1 ft h' V $ Vg s * m * fë I* _ P /P (A) * £ X (V) X fr* d r ch (W) (max) (A) Vg s (V) î£ Rî W s (min) (max) V d s (A) (V) (A) (Ta=25*C) « (min) (max) Vd s (V) (V) (V) Id (A) gm (min) (S) Vds (V) Id (A) YTF840

capacitor 22 nF

Abstract: 7 NF 13 0600 M nf 828 nf 0102 CPM50 CPM72 capacitors BF CPM83 E12 Series capacitor 25 uF capacitor
Contextual Info: ST 22/36 Axial Leads 630 V- . 10,000 VAPPLICATIONS Non-inductive, insulated capacitor. Cylindrical, axial leads, polyester wrapped, epoxy resin sealed. L 25 0.984 min. Some examples of use: High voltage filtering, TV line recuperation. SPACELAB qualified.

ISTS804

Abstract: h21A1 sensor icpl3700 H21A2 IS2100G ISTS401 ICPL2502 ICPL2601 h24b1 4N35 cny17
Contextual Info: ISOCOH COMPONENTS LTD 4SE D • MfiflbSlO 0000236 b «¡ISO OPTOELECTRONIC SWITCHES VF 'r bvceo Ip = 60mA > to 11 oc > Characteristics lg=1mA Test bveco lc 0N lc °N lc °N Ip = 5mA Ip = 20mA Ip = 30mA VCF = 5V Vce =5V Vce = 5V VCE SAT lE= lOOpA Vce =25V lc = 1.8mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF730 MOSFET N-Channel TO-220 1. G FEATURES z 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V z Low gate charge ( typical 25 nC) z Low Crss ( typical 20 pF) z Fast switching

Contextual Info: ADW NCED P ow er Te c h n o lo g y O D APT30M85BNR 300V APT3010BNR 300V O s POWER MOS IV® 40A 0.0850 35A 0.100a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: i HI R DA N G L EP I l 2 _ J _ E CT~I ITEM CODE ECQE21030B3 1 1 21230B3 1 1 21530B3 1 1 21830B3 1 1 22230B3 1 1 22730B3 1 1 23330B3 1 1 23930B3 1 1 24730B3 1 1 25630B3 1 1 26830B3 1 1 28230 B3 1 1 21040B3 1 21240B3 1 1 21540B3 1 1 21840B3 1 1 22240B3 1 1 22740B3

Contextual Info: HARRIS S E M I C O N D U C T O R DG408, DG409 Single 8 -Channel/Differential 4-Channel CMOS Analog Multiplexers October 1993 Features • Description ON-Resistance 100ft Maximum +25°C T h e D G 40 8 Single 8-Channel and D G 40 9 Differential 4Channel monolithic C M O S analog multiplexers are drop-in

D4EN

Abstract: D4E-1B20N D4E-1E20N D4E-1C20N D4E-1E00N 3M Touch Systems
Contextual Info: Small Sealed Switch D4E-@N Slim and Compact Switch with Better Seal and Ensuring Longer Service Life than D4E Limit Switches • Flat springs with an improved lever ratio of the built-in switch ensure smooth snap action and long life expectancy. • Protection cover protects the built-in switch from dust and oil.

BC337-01

Abstract: 190n0 2N1384 2N2246 usaf510es030 bc337 transistor bc337 hie 1743-0810 2n1680 hie for bc337
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D APT6040BNR APT6045BNR O s POWER MOS IV“ 600V 18.0A 0.40U 600V 17.0A 0.450 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS b ' dm ^GS V GSM PD TJ’TSTG All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: i H I R DA N G L EP R O J E C T I O NI ALTERATION DIMENSIONS RATED CAP ※ L ※T ※H ※d F VOLTAGE ECQE21030F3 250VDC O . 01 1O .3 4 .4 O .6 .3 7 H 1 1 1 1 1 1 21230F3 O . 012 4 .4 7 .5 1 / 1 / 1 1 1 1 1 1 1 / 21530F3 o . 015 1 1 1 1 1 1 1 1 1 1 1 1

ta8601bn

Abstract: ta8601 23P100 23A50 P46C 23m500 C20N TA8601B MAXIAU
Contextual Info: TOSHIBA Unit: TENTATIVE VIDEO-CHROMA-DEFLECT ION SYSTEM FOR A COLOR TELEVISION NTSC mm Z The TA8601BN combines the Video-Chroma sub­ system and the Deflection stage on a single monolithic integrated circuit to provide a Color Television Video-Chroma-Deflection systea.

APT10M25BNR

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025Í2 75A 0.030Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'dm V GS ^GSM PD T J’ T STG All Ratings: Tc = 25°C unless otherwise specified.