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    0N/10 Datasheets (39)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HM10N10K
    VBsemi Electronics Co Ltd N-Channel 100 V MOSFET with 175 °C junction temperature, RDS(on) 0.140 Ω at VGS = 10 V, continuous drain current up to 13 A, available in TO-252 package, suitable for PWM and primary side switch applications. Original PDF
    badge AKP080N10
    AK Semiconductor AKP080N10 N-Channel Super Trench II Power MOSFET, 100V VDS, 75A ID, 7.4mΩ RDS(on) typical at VGS=10V, TO-220 package, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge JMTQ320N10A
    Jiangsu JieJie Microelectronics Co Ltd 100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications. Original PDF
    badge JMTG320N10A
    Jiangsu JieJie Microelectronics Co Ltd N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package. Original PDF
    badge SL10N10A
    SLKOR Trench Power MV MOSFET technology, SOT-223 package, VDS 100V, RDS(ON)@10V,MAX 95mΩ, ID 10A, VGS ±20V, TJ 150°C, TSTG -50 to 155°C, ID Tc=25°C 10A. Original PDF
    badge SLP120N10G
    Maplesemi N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested. Original PDF
    badge JMTI10N10A
    Jiangsu JieJie Microelectronics Co Ltd N-channel enhancement mode power MOSFET with 100V drain-source voltage, 10A continuous drain current, and RDS(on) less than 110mΩ at VGS=10V, housed in a TO-251-3L package. Original PDF
    badge SKQ90N10AD
    Shikues Semiconductor 100V N-Channel MOSFET, RDS(ON)=4mΩ@10V, 5mΩ@4.5V, DC-DC Converter, Motor Control, Load Switching, Secondary Side Sync Rectification. Original PDF
    badge AK70N100I
    AK Semiconductor AK70N100I N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V gate-source voltage. Original PDF
    badge SLB160N10G3
    Maplesemi N-Channel MOSFET with 100V drain-source voltage, 160A continuous drain current, 3.7mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested, housed in TO-263 package. Original PDF
    badge HSH250N10
    Huashuo Semiconductor N-Ch 100V Fast Switching MOSFET with 250A continuous drain current, 1.9 mΩ RDS(ON), suitable for motor drivers, BMS, and high-frequency switching applications. Original PDF
    badge JMTI320N10A
    Jiangsu JieJie Microelectronics Co Ltd N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package. Original PDF
    badge SL20N10
    SLKOR Original PDF
    badge CJU40N10
    JCET Group N-Channel Power MOSFET U40N10 in TO-252-2L package with 100V drain-source voltage, 40A continuous drain current, and 14mΩ typical on-resistance at 10V gate-source voltage, designed for high voltage switching applications. Original PDF
    badge SL60N10Q
    SLKOR N-Channel Power MOSFET, VDS 100V, ID 60A, RDS(ON) < 11.5mΩ at VGS=10V, < 15mΩ at VGS=4.5V, DFN5x6 package. Original PDF
    badge CJU30N10
    JCET Group N-Channel Power MOSFET CJU30N10 in TO-252-2L package with 100V drain-source voltage, 30A continuous drain current, and 24mΩ on-resistance at 10V gate-source voltage, designed for high voltage switching applications. Original PDF
    badge HSBA060N10
    Huashuo Semiconductor N-Ch 100V Fast Switching MOSFET with 4.6 mΩ RDS(ON), 86 A continuous drain current, low gate charge, and 100% EAS guaranteed, suitable for synchronous rectification in AC/DC quick chargers. Original PDF
    badge SL80N10
    SLKOR Original PDF
    badge JMTK170N10A
    Jiangsu JieJie Microelectronics Co Ltd 100V, 59A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(on) less than 20mΩ at VGS=10V, suitable for load switching, PWM, and power management applications. Original PDF
    badge AKZE40N10
    AK Semiconductor N-Channel 100-V MOSFET with 30 A continuous drain current, 0.035 ohm drain-source on-resistance at 10 V gate voltage, and 175 °C maximum junction temperature in a TO-252 package. Original PDF
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    0N/10 Price and Stock

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    Infineon Technologies AG IPG20N10S4L35ATMA1

    MOSFET 2N-CH 100V 20A 8TDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPG20N10S4L35ATMA1 Cut Tape 12,338 1
    • 1 $2.25
    • 10 $1.44
    • 100 $0.97
    • 1000 $0.77
    • 10000 $0.77
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    Rochester Electronics IPG20N10S4L35ATMA1 213,073 1
    • 1 -
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    • 100 $0.71
    • 1000 $0.59
    • 10000 $0.52
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    Goford Semiconductor G450N10D52

    MOSFET 100V 35A 8DFN
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    DigiKey () G450N10D52 Cut Tape 4,897 1
    • 1 $1.53
    • 10 $0.96
    • 100 $0.64
    • 1000 $0.50
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    G450N10D52 Digi-Reel 4,897 1
    • 1 $1.53
    • 10 $0.96
    • 100 $0.64
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    IXYS Corporation IXTH200N10T

    MOSFET N-CH 100V 200A TO247
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    DigiKey IXTH200N10T Tube 3,121 1
    • 1 $12.12
    • 10 $12.12
    • 100 $6.66
    • 1000 $5.42
    • 10000 $5.42
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    Vyrian IXTH200N10T 670
    • 1 -
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    Rochester Electronics LLC RF1S40N10LE

    MOSFET N-CH 100V 40A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1S40N10LE Bulk 1,368 186
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    • 1000 $1.61
    • 10000 $1.61
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    Micro Commercial Components MCAC90N10Y-TP

    MOSFET N-CH 100 90A DFN5060
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () MCAC90N10Y-TP Cut Tape 1,311 1
    • 1 $2.94
    • 10 $1.90
    • 100 $1.30
    • 1000 $1.04
    • 10000 $1.04
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    MCAC90N10Y-TP Digi-Reel 1,311 1
    • 1 $2.94
    • 10 $1.90
    • 100 $1.30
    • 1000 $1.04
    • 10000 $1.04
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    MCAC90N10Y-TP Tape & Reel 1,311 5,000
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    • 10000 $0.82
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