JMTQ320N10A
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications. |
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AKP080N10
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AK Semiconductor
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AKP080N10 N-Channel Super Trench II Power MOSFET, 100V VDS, 75A ID, 7.4mΩ RDS(on) typical at VGS=10V, TO-220 package, suitable for high-frequency switching and synchronous rectification applications. |
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SLP120N10G
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Maplesemi
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N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, 4.9mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested. |
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HM10N10K
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VBsemi Electronics Co Ltd
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N-Channel 100 V MOSFET with 175 °C junction temperature, RDS(on) 0.140 Ω at VGS = 10 V, continuous drain current up to 13 A, available in TO-252 package, suitable for PWM and primary side switch applications. |
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JMTG320N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package. |
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SL10N10A
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SLKOR
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Trench Power MV MOSFET technology, SOT-223 package, VDS 100V, RDS(ON)@10V,MAX 95mΩ, ID 10A, VGS ±20V, TJ 150°C, TSTG -50 to 155°C, ID Tc=25°C 10A. |
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SKQ90N10AD
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Shikues Semiconductor
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100V N-Channel MOSFET, RDS(ON)=4mΩ@10V, 5mΩ@4.5V, DC-DC Converter, Motor Control, Load Switching, Secondary Side Sync Rectification. |
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AK70N100I
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AK Semiconductor
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AK70N100I N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V gate-source voltage. |
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SLB160N10G3
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Maplesemi
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N-Channel MOSFET with 100V drain-source voltage, 160A continuous drain current, 3.7mΩ typical RDS(on) at VGS = 10V, low Crss, fast switching, and 100% avalanche tested, housed in TO-263 package. |
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JMTI10N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel enhancement mode power MOSFET with 100V drain-source voltage, 10A continuous drain current, and RDS(on) less than 110mΩ at VGS=10V, housed in a TO-251-3L package. |
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SL80N10
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SLKOR
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HSBA060N10
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Huashuo Semiconductor
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N-Ch 100V Fast Switching MOSFET with 4.6 mΩ RDS(ON), 86 A continuous drain current, low gate charge, and 100% EAS guaranteed, suitable for synchronous rectification in AC/DC quick chargers. |
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CJU30N10
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JCET Group
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N-Channel Power MOSFET CJU30N10 in TO-252-2L package with 100V drain-source voltage, 30A continuous drain current, and 24mΩ on-resistance at 10V gate-source voltage, designed for high voltage switching applications. |
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CJAC20N10
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JCET Group
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CJAC20N10 N-Channel Power MOSFET with 100V drain-source voltage, 20A continuous drain current, ultra low RDS(on), high energy avalanche capability, and fast recovery drain-to-source diode for high voltage switching applications. |
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AKP040N10
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP040N10 with 100V drain-source voltage, 130A continuous drain current, typical RDS(on) of 3.7mΩ at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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SLB120N10G
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Maplesemi
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N-Channel MOSFET with 100V drain-source voltage, 120A continuous drain current, typical RDS(on) of 4.6mΩ at VGS = 10V, low input capacitance, and fast switching characteristics suitable for high-efficiency power management applications. |
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JMTK500N10A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel enhancement mode power MOSFET with 100V drain-source voltage, 20A continuous drain current, and RDS(on) less than 48mΩ at VGS=10V in a TO-252-4R package. |
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SK30N10B-TF
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Shikues Semiconductor
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100V N-Channel MOSFET, RDS(ON),typ.=30mΩ@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, Automotive, DC Motor Control. |
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JMTC170N10A
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 59A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(on) less than 20 mΩ at VGS = 10V, suitable for power management and load switching applications. |
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NCEAP020N10LL
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NCEPOWER
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NCE AP020N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V drain-source voltage, 330 A continuous drain current, 1.5 mΩ typical RDS(on) at VGS = 10 V, and 175 °C maximum operating temperature. |
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JMTQ320N10A
