AK20H11K
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AK Semiconductor
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AK20H11K N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 110A continuous drain current, and 4mΩ typical RDS(ON) at 10V VGS, suitable for power switching applications. |
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NCE30H11K
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NCEPOWER
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NCE30H11K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.6mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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AK80H11D
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK80H11D with 80V drain-source voltage, 105A continuous drain current, and 6.1mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications. |
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NCE40H11
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NCEPOWER
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NCE40H11 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 110A continuous drain current, and low on-resistance of 3.4mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency in switching applications. |
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NCE30H11BK
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NCEPOWER
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NCE30H11BK is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.7mΩ at VGS=10V, using advanced trench technology for high efficiency in DC/DC converters and synchronous rectifiers. |
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NCE30H11BG
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NCEPOWER
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NCE30H11BG is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.3mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications. |
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NCE80H11D
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VBsemi Electronics Co Ltd
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NCE80H11D is an N-Channel MOSFET in TO-263 package with 80 V drain-source voltage, 0.0065 ohm on-resistance at 10 V gate voltage, 120 A continuous drain current, and 53.5 nC total gate charge. |
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NCE30H11G
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NCEPOWER
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NCE30H11G N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, 2.4mΩ RDS(ON) at VGS=10V, and 3.0mΩ at VGS=4.5V, utilizing advanced trench technology for low on-resistance and high efficiency in power switching applications. |
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AK80H11
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 80V drain-source voltage, 105A continuous drain current, and 6.5mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and automotive applications. |
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AK80H11H
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK80H11H with 80V drain-source voltage, 105A continuous drain current, and 6.5mΩ typical RDS(ON) at 10V gate-source voltage, designed for high-frequency and automotive applications. |
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NCE40H11K
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NCEPOWER
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40V, 110A NCE40H11K trench MOSFET with advanced technology for low RDS(ON) of 4.0 mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package. |
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AK20H11K
