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    0H-11 Search Results

    0H-11 Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge AK20H11K
    AK Semiconductor AK20H11K N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 110A continuous drain current, and 4mΩ typical RDS(ON) at 10V VGS, suitable for power switching applications. Original PDF
    badge AK80H11D
    AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK80H11D with 80V drain-source voltage, 105A continuous drain current, and 6.1mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications. Original PDF
    badge NCE30H11K
    NCEPOWER NCE30H11K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.6mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge NCE40H11
    NCEPOWER NCE40H11 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 110A continuous drain current, and low on-resistance of 3.4mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency in switching applications. Original PDF
    badge NCE30H11G
    NCEPOWER NCE30H11G N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, 2.4mΩ RDS(ON) at VGS=10V, and 3.0mΩ at VGS=4.5V, utilizing advanced trench technology for low on-resistance and high efficiency in power switching applications. Original PDF
    badge NCE30H11BK
    NCEPOWER NCE30H11BK is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.7mΩ at VGS=10V, using advanced trench technology for high efficiency in DC/DC converters and synchronous rectifiers. Original PDF
    badge NCE30H11BG
    NCEPOWER NCE30H11BG is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.3mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications. Original PDF
    badge NCE80H11D
    VBsemi Electronics Co Ltd NCE80H11D is an N-Channel MOSFET in TO-263 package with 80 V drain-source voltage, 0.0065 ohm on-resistance at 10 V gate voltage, 120 A continuous drain current, and 53.5 nC total gate charge. Original PDF
    badge AK80H11
    AK Semiconductor N-Channel Enhancement Mode Power MOSFET with 80V drain-source voltage, 105A continuous drain current, and 6.5mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and automotive applications. Original PDF
    badge AK80H11H
    AK Semiconductor N-Channel Enhancement Mode Power MOSFET AK80H11H with 80V drain-source voltage, 105A continuous drain current, and 6.5mΩ typical RDS(ON) at 10V gate-source voltage, designed for high-frequency and automotive applications. Original PDF
    badge NCE40H11K
    NCEPOWER 40V, 110A NCE40H11K trench MOSFET with advanced technology for low RDS(ON) of 4.0 mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package. Original PDF
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    0H-11 Price and Stock

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    Rochester Electronics LLC LD6805K-20H,115

    IC REG LIN 2V 150MA DFN1010C-4
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    DigiKey LD6805K-20H,115 Bulk 40,000 1,035
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    • 10000 $0.29
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    Qualcomm B39921B3300H110

    FILTER SAW 916.5MHZ 6-SMD
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    DigiKey () B39921B3300H110 Digi-Reel 11,678 1
    • 1 $1.67
    • 10 $1.36
    • 100 $1.11
    • 1000 $0.91
    • 10000 $0.91
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    B39921B3300H110 Cut Tape 11,678 1
    • 1 $1.67
    • 10 $1.36
    • 100 $1.11
    • 1000 $0.91
    • 10000 $0.91
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    Rochester Electronics LLC MC10H117FNR2G

    IC OR-AND/OR-AND-INVERT GATE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MC10H117FNR2G Bulk 6,500 104
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    • 1000 $2.89
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    Rochester Electronics LLC MC10H116MELG

    IC TRANSCEIVER 0/3 16SOEIAJ
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    DigiKey MC10H116MELG Bulk 6,141 104
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    Rochester Electronics LLC MC10H115MG

    IC TRANSCEIVER 0/4 16SOEIAJ
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    DigiKey MC10H115MG Tube 5,660 104
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