AD-RB160M-30
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JCET Group
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AD-RB160M-30 is a plastic-encapsulated Schottky barrier diode designed for small current rectification and low voltage applications, with a 30V DC blocking voltage, 1A forward current, and qualified to AEC-Q101 standards. |
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RB160M-30
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode RB160M-30 with 30V peak repetitive reverse voltage, 1.0A forward current, 450mW power dissipation, and operating temperature from -65 to +125°C. |
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RB070M-30
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode RB070M-30 with 30 V reverse voltage, 250 mA average rectified forward current, low forward voltage drop, and high surge current capability, housed in SOD-123FL package. |
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RB160M-30
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JCET Group
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Schottky barrier diode in SOD-123 package for small current rectification, with 30 V DC blocking voltage, 1 A forward current, 450 mW power dissipation, and low forward voltage of 0.48 V at 1 A. |
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RB070M-30
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Shikues Semiconductor
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Schottky Barrier Rectifier, 40V, 2.0A, SOD-123FL, low power loss, high efficiency, surge current capability. |
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RB160M-30 环保
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JCET Group
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RB160M-30 Schottky barrier diode in SOD-123 package for small current rectification, with 30 V DC blocking voltage, 1 A forward current, low forward voltage of 0.48 V at 1000 mA, and 450 mW power dissipation. |
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RB160M-30
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Shikues Semiconductor
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Metal silicon junction, majority carrier conduction, low power loss, high efficiency, high forward surge current capability, SOD-123FL case. |
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RB060M-30
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Shikues Semiconductor
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Surface Mount Schottky Rectifier, 30-60V, 2.0A, SOD-123FL, low power loss, high efficiency, surge current capability. |
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AD-RB160M-30
