0GG2B25 Search Results

Contextual Info: HAMAMATSU CORP n c D • 0GG2b25 4 ■ P3240-> U —X /v*f/'C«7-fflCdStì;i/ HAMAMATSU PRODUCT BULLETIN PB-164 SEP. 1988 P3240 SERIES HIGH POWER CdS CELLS 7 - V / - V / P 3240 s> IJ I* - ? * m m t t t f f f £ t> £ C : M fg L t z s JÄ X jS C X 5 / \ * / t r j —MCd St eJl sT t o W H a — t 1^

AFM02N5-00

Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Contextual Info: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip