0924 -H 1 Search Results

Contextual Info: 4 2 3 TH I S DRAW I NG I S UNPUBLI SHED. COPYRIGHT Dl ST DATE : x w x T X T y r x x Ne de r l and B .V . RIGHTS RESERVED. H ^ jrp Q h, -pp Ha rp da ^rp _rpj Bj REVISIONS { M ECN EH00-0924- 00 N ECN E HOO- O1263- 01 P ECN E H 0 0 - 1 3 5 2 - 0 1rm J 1 5.1

Contextual Info: TOSHIBA TC55VD818FF-133,-143,-150 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VD818FF is a synchronous static random access memory SRAM organized as 524,288 words by 18

Contextual Info: TOSHIBA TC55VL818FF-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL818FF is a synchronous static random access memory SRAM organized as 524,288 words by 18 bits. NtRAMTM(no-turnaround) SRAM offers high bandwidth by eliminating dead cycles during

Contextual Info: TO SH IBA TC55VD818FFI-133,-143 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VD818FFI is a synchronous static random access memory SRAM organized as 524,288 words by 18

Contextual Info: TOSHIBA TC55VD836FF-133#-143#-150 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36

R2A3 02

Abstract: R2A3 M1518 R2A3 load
Contextual Info: TOSHIBA THMY721610BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721610BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404BFTL DRAMs and PLL/Registers on a printed circuit board.

2Sc5570

Abstract: 0924 -h 1
Contextual Info: TOSHIBA 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5570 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS VCBO = 1700V VCE sat = 3V (Max.) tf (2) —0.1/¿s (Typ.)

AsB0912l

Abstract: AUB0812H EFB1248HF
Contextual Info: Descriptions: 1. Delta will not guarantee the performance of the products if the application condition falls outside the parameters set forth in the specification. 2. A written request should be submitted to Delta prior to approval if deviation from this specification is required.

ICS953002

Abstract: 953002dflf 953002CFLF ics 953002dflf SEL24 953002
Contextual Info: ICS953002 Integrated Circuit Systems, Inc. Programmable Timing Control Hub for Next Gen P4™ processor Recommended Application: Chipset for P4 type processor with PCI-Express Output Features: • 2 - 0.7V current-mode differential CPU pairs • 1 - 0.7V current-mode differential CPU/PCI-Express

Contextual Info: T O SH IB A TC7W04F/FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W04F, TC7W04FU, TC7W04FK 3 INVERTERS The TC7W04 is high speed C2MOS BUFFER fabricated with TC7W04F silicon gate C2MOS technology. The internal circuit is composed of 3 stage including

TC7W74F

Abstract: TC7W74 TC7W74FK TC7W74FU SR flip flop pr clr table
Contextual Info: TOSHIBA TC7W74F/FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W74F, TC7W74FU, TC7W74FK D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7W74 is a high speed C2MOS D FLIP FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: T O SH IB A TC7WU04F/FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WU04F, TC7WU04FU, TC7WU04FK 3 INVERTER The TC7WU04 is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achives the high speed operation similar to equivalent

mps+0924

Contextual Info: T O SH IB A TCD2253D TO SH IBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD2253D The TCD2253D is a high sensitive and low d ark current 2700 e le m e n tsx3 line CCD color im age sensor which includes CCD drive circuit, clam p circuit and sample &

Contextual Info: TOSHIBA TC55VL836FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL836FFI is a synchronous static random access memory SRAM organized as 262,144 words by 36 bits. NtRAMTM(no-turnaround) SRAM offers high bandwidth by eliminating dead cycles during the

Contextual Info: T O S H IB A 2SC5570 TO SH IB A TRA N SISTO R SILICON NPN TRIPLE D IFFU SED M ESA TYPE 2SC5570 H O RIZO N TAL D EFLECTIO N O U TPU T FO R SUPER HIGH RESO LU TIO N CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO Emitter Cut-off Current Ie b o Colleetor-Emitter Breakdown

Contextual Info: ! " # $ % & '% ! *" +, " # - ' . - / 01 2 .2 $ * . *' . 3 % 4% % 5 6 . 7% 1* * . , 89) . % % , /: ; ; : : . .% . . 2 % * ' / % 2 2 - 7% # ., ., ., 8 & #8 ( 8 !"# &' ( )* + , & ) $ % * # $& - ., * Rev. 2.1, 2012.09.20 ! " # / 0% ! 1!2" 34 25 2"1 "10 *

ultra Bright white 5 mm LED

Abstract: TOAB10ZE TOAB10ZG Bright 3 colour LED ultra bright led EUR22DX EUY22DX EUG22DX
Contextual Info: OPTOELECTRONICS LED LIGHT BARS/BARGRAPHS LIGHT BARS All types have a coloured-diffused lens. Case & Viewing Angle Emitted Colour Brightness Typ. Lum. Intensity per segment IF = 10mA mcd Manf. Part No. & Order Code Dimensions (mm) & Pin Connections 7.5 x 14mm

KDB04505HA

Abstract: BFB0705HA AFC0912DF AFC1512DG KFB0505HHA FFB03812HHN BUB0512HB AUB0712HH PFB0412EHN E132003
Contextual Info: 客戶承認書 CUSTOMER: DPC DESCRIPTION: DC FAN DELTA MODEL: REV: CE CUSTOMER P/N: NT ER SPECIFICATION FOR APPROVAL EHB1548SHG-C126 REV: 00 QUANTITY: DO C SAMPLE ISSUE DATE: 06/07/2011 LT A PLEASE SIGN BACK ONE COPY OF THIS SPECIFICATION AFTER COMPLETION OF APPROVAL

PH05V

Abstract: ph01 PH04V PH05U
Contextual Info: Fixed Resistors Leaded P o w e r _ i»» 1 1111 ! • T echnology jw ire w o u nd , axial cem ented, precision . ! ' sw* ü Case size w n 0509 Tolerance Power i 1.0W PH05U FH01V PHQ3V 0617 0824 0509 0613 5%, 3%, 1.0W 3.0W 5.0W i w ire w o u nd , axial cem ented, precision

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb —FREE Sn96%, Ag4% Yes Yes W U R T H E L E K T R O N IK ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: TEST 0 .6 1 5 o h m s ±10% D .C . R E S IS T A N C E 4 -5 @ 20”C 0 .2 5 4 o h m s ±10% D .C . R E S IS T A N C E

Contextual Info: CUSTOMER TERMINAL Sn96%, Ag4% RoHS LEAD Pb —FREE Yes Yes W U R T H E L E K T R O N IK ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: PRI 120—375V ( 2 J 6 8 - 1 10kHz -® CD- SEC 16V, 1.64A C O N D IT IO N S VALUE @20”C D.C. RESISTANCE 4-5

Contextual Info: Revised Mar. 1998 JS9P09-AS 1. R F PERFO R M A N CE SP E C IF IC A T IO N S CHARACTERISTICS SYM BOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm 7.0 9.5 — dB IDS1 - 0.18 0.3 A T|add - 28 — % Output Power at ld B Compression Point PldB Power Gain at ld B

Contextual Info: o T H I S DRAWI NG I S U N P U B L I S H E D . Q U E S T O D I S E G N O NON D E V E E S S E R E D I V U L G A T O 0 R I P R O D O T T O TÊT COPYRIGHT ry 19 am p BY R E L E A S E D FOR P U B L I C A T I O N E ' C O N S E N T I T A LA D I V U L G A Z I O N E

OV 5693

Contextual Info: Revised Mar. 1998 JS9P09-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT PldB 23.0 24.0 — dBm