0902NSI Search Results
0902NSI Price and Stock
Infineon Technologies AG BSC0902NSIATMA1MOSFET N-CH 30V 23A/100A TDSON |
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BSC0902NSIATMA1 | Cut Tape | 24,253 | 1 |
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BSC0902NSIATMA1 | Reel | 26 Weeks | 5,000 |
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BSC0902NSIATMA1 | Cut Tape | 7,605 | 1 |
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BSC0902NSIATMA1 | 5,173 | 1 |
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BSC0902NSIATMA1 | 4,520 | 1 |
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BSC0902NSIATMA1 | 10,000 |
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BSC0902NSIATMA1 | 5,000 |
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Infineon Technologies AG BSZ0902NSIATMA1MOSFET N-CH 30V 21A/40A TSDSON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ0902NSIATMA1 | Cut Tape |
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BSZ0902NSIATMA1 | Reel | 5,000 |
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BSZ0902NSIATMA1 | Cut Tape | 1 |
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BSZ0902NSIATMA1 | 4,617 | 1 |
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BSZ0902NSIATMA1 | Cut Tape | 4,515 | 0 Weeks, 1 Days | 5 |
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BSZ0902NSIATMA1 | 5,000 |
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Infineon Technologies AG BSC0902NSIMOSFETs N-Ch 30V 100A TDSON-8 OptiMOS |
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BSC0902NSI | 9,729 |
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0902NSI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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0902NSIContextual Info: n-Channel Power MOSFET OptiMOS 0902NSI Data Sheet 2.0, 2011-06-10 Final Industrial & Multimarket OptiMOS™ Power-MOSFET 0902NSI 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together |
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BSZ0902NSI OptiMOSTM30V 0902NSI | |
0902NSIContextual Info: n-Channel Power MOSFET OptiMOS 0902NSI Data Sheet 2.1, 2011-09-08 Final Industrial & Multimarket OptiMOS™ Power-MOSFET 0902NSI 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together |
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BSC0902NSI OptiMOSTM30V 0902NSI | |
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Contextual Info: 0902NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max |
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BSC0902NSI IEC61249-2-21 0902NSI | |
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Contextual Info: 0902NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max |
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BSZ0902NSI IEC61249-2-21 0902NSI | |
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Contextual Info: n-Channel Power MOSFET OptiMOS 0902NSI Data Sheet 2.0, 2011-06-10 Final Industrial & Multimarket OptiMOS™ Power-MOSFET 0902NSI 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together |
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BSZ0902NSI | |
0902NSI
Abstract: BSC0902NSI
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BSC0902NSI OptiMOSTM30V 0902NSI BSC0902NSI |