08DEC03 Search Results

Contextual Info: TLW.9900 VISHAY Vishay Semiconductors TELUX Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP

2N7002 MARKING

Abstract: lcds operating characteristics CAT37 CAT37TDI-GT3 CAT37TDI-T3 LT1937 MBR0520 MBR0530
Contextual Info: CAT37 CMOS White LED Driver Boost Converter FEATURES DESCRIPTION „ Low quiescent ground current 0.5mA typical The CAT37 is a DC/DC step up converter that delivers a regulated output current. Operation at a constant switching frequency of 1.2MHz allows the device to be

Si7983DP

Contextual Info: Si7983DP Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.017 @ VGS = −4.5 V −12 0.020 @ VGS = −2.5 V −11 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package

SUM85N03-06P

Abstract: SUM85N03-06P-E3
Contextual Info: SUM85N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES D D D D D PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 85 0.009 @ VGS = 4.5 V 77 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

SUM110N04-03P

Abstract: SUM110N04-03P-E3
Contextual Info: SUM110N04-03P Vishay Siliconix New Product N-Channel 40-V D-S 175_C MOSFET FEATURES TrenchFETr Power MOSFET 175_C Junction Temperature New Package with Low Thermal Resistance Extremely Low Qgd WFETt Technology for Low Switching Losses D 100% Rg Tested D

Si4350DY

Abstract: Si4350DY-T1
Contextual Info: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V

SUM85N03-08P

Abstract: SUM85N03-08P-E3
Contextual Info: SUM85N03-08P Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D D PRODUCT SUMMARY V BR DSS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 85 0.0105 @ VGS = 4.5 V 72 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

SUM70N03-09CP

Abstract: SUM70N03-09CP-E3
Contextual Info: SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 20 V 70 0.014 @ VGS = 4.5 V 58 D D D D TrenchFETr Power MOSFET Optimized for High- or Low-Side New Low Thermal Resistance Package

250 MKT

Abstract: capacitor 250 mkt 100 mkt 100v mkt 40393 40563 MKT Polyester capacitor
Contextual Info: MKT 468 MKT/MKT 468 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Lacquered Type APPLICATIONS Blocking and coupling. Bypass and energy reservoir 168x12 halfpage l MARKING C-value; tolerance; rated voltage; code for manufacturer;

SUM85N15-19

Abstract: SUM85N15-19-E3
Contextual Info: SUM85N15-19 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.019 @ VGS = 10 V 85 a TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package 100% Rg Tested

Contextual Info: FX5545G205 Vishay Industry Smallest and Low Profile 8W 2.5A DC/DC Buck Converter with High Output Density Power FEATURES • Fully integrated DC/DC converter • High efficiency over large load range • 100% duty cycle • Power density - more than 300W/inch3

Contextual Info: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21

Contextual Info: CNY74-2H/ CNY74-4H VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Multichannel Features • • • • • • • • • CNY74-2H includes 2 isolator channels CNY74-4H includes 4 isolator channels Isolation test voltage VISO = 5000 VRMS

smd diode marking bt

Abstract: SFH690AT DIODE SMD MARKING CODE Bt SFH690ABT
Contextual Info: SFH690ABT/ AT/ BT/ CT VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4, Mini-Flat Package Features • SOP Small Outline Package • Isolation Test Voltage, 3750 VRMS (1.0 s) • High Collector-Emitter Breakdown Voltage, VCEO = 70 V

SUM85N03-06P

Abstract: SUM85N03-06P-E3
Contextual Info: SUM85N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES D D D D D PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 85 0.009 @ VGS = 4.5 V 77 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V 110 a TrenchFETr Power MOSFET 200_C Junction Temperature New Package with Low Thermal Resistance 100% Rg Tested

SUM110N03-04P

Abstract: SUM110N03-04P-E3
Contextual Info: SUM110N03-04P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0042 @ VGS = 10 V 110 0.0065 @ VGS = 4.5 V 77 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for Low-Side Synchronous Rectifier Operation

BZX384C75

Abstract: BZX384C75 PSpice
Contextual Info: VISHAY BZX384C75_PSpice Vishay Semiconductors BZX384C75 Spice Parameters .SUBCKT bzx384_c75 2 1 * * Model Generated by MODPEX * *Copyright c Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE *

Contextual Info: SUM85N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES D D D D D PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 85 0.009 @ VGS = 4.5 V 77 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

Contextual Info: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V

marking D1-90

Contextual Info: CAT37 CMOS White LED Driver Boost Converter FEATURES DESCRIPTION „ Low quiescent ground current 0.5mA typical The CAT37 is a DC/DC step up converter that delivers a regulated output current. Operation at a constant switching frequency of 1.2MHz allows the device to be

SUM85N03-06P

Abstract: SUM85N03-06P-E3
Contextual Info: SUM85N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES D D D D D PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 85 0.009 @ VGS = 4.5 V 77 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency

Contextual Info: TLW.9600 VISHAY Vishay Semiconductors TELUX Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP

Contextual Info: TLW.76. VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed AS AllnGaP and