08APR02 Search Results

641321-2

Abstract: 187 series faston tab
Contextual Info: THIS DRAWI NG IS COPYRI GHT UNPUBLI SHED. RELEASED FOR P U B L I CA T I O N 19 BY AMP 19 LOC I NCORPORATED. REVISIONS DI ST G AL L RI GHTS RESERVED. 14 LTR H DE SC RI PT I ON REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM D . 020 700MAX MAX— »

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. 2 RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 2 ,19 LOC ALL RIGHTS RESERVED. DI5T G 14 REVISIONS P LTR H DESCRIPTION REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM D D 61059-2 734MAX IS REVERSED

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 LOC RE SE R VE D . REVISIONS DI ST G 14 L TR F DESCRIPTION DATE REV PER 0 G 3 A - 0 1 7 6 - 0 2 08APR02 DWN APVD JR TM D 020 800MAX

cp1600

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 LOC RE SE R VE D . REVI SI ONS DI ST G 14 L TR F REV P ER DESCRIPTION DATE DWN APVD 0G3A-0176-02 08APR02 JR TM D S E R R A T IONS

640917-2

Abstract: 640917-1
Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 LOC RE SE R VE D . DI ST G REVISIONS 14 L TR L DESCRIPTION REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM D 020 800MAX

640915-1

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 LOC RE SE R VE D . DI ST G REVISIONS 14 L TR G REV PER DESCRIPTION DATE DWN APVD 0G3A-0176-02 08APR02 JR TM D 020 800MAX MAX- r È LT J r i _ r _ i r i

Contextual Info: T H IS DRAWING IS COPYRIGHT UNPUBLISHED. RELEASED FOR P U B LI C A T IO N 19 BY AMP 19 LOC ALL RIGHT S RESERVED. INCORPORATED. REVISIONS DI ST G 14 LTR F DE SC RI PT IO N REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM D 020 800 - MAX- MAX r

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . 19 RELEASED BY AMP FOR ALL IN COR PO RA TE D. , 19 PUBLICATION RIGHTS LOC RE SE R VE D . REVISIONS DI ST G 14 L TR G DESCRIPTION REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM D 1. . 0 2 0 MAX -I

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . 19 RELEASED BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 D IS T LOC RE SE R VE D . G REVI SI ONS 14 L TR H DESCRIPTION REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM I N 5 U L A T I ON

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 LOC RE SE R VE D . REVISIONS DI ST G 14 L TR G REV PER DESCRIPTION DATE DWN APVD 0G3A-0176-02 08APR02 JR TM D 020 800MAX MAX- 1 .

796-MAX

Abstract: CP-16000
Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 REVISIONS D IS T LOC RE SE R VE D . G 14 L TR DESCRIPTION REV PER 0 G 3 A - 0 1 7 6 - 0 2 H DATE DWN APVD 08APR02 JR TM D r > / t Lr J C

61059-2

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 REVISIONS D IS T LOC RE SE R VE D . G 14 L TR H DESCRIPTION REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM D 61059-2

187 series faston tab

Contextual Info: THIS DRAWING IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP FOR ALL IN COR PO RA TE D. PUBLICATION RIGHTS 19 LOC RE SE R VE D . REVISIONS DI ST G 14 L TR DESCRIPTION RE V PER DWN DATE 0G3A-0176-02 APVD JR TM 08APR02 D 020 800MAX MAX- r È LTJ r i_r_ir i

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. R RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 2 3 ,19 LOC G ALL RIGHTS RESERVED. REVISIONS DI5T 14 P LTR H DESCRIPTION REV PER 0 G 3 A - 0 1 7 6 - 0 2 DATE DWN APVD 08APR02 JR TM D D 1. INSULATION 2. FITS TAB

Si1302DL

Contextual Info: SPICE Device Model Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0035 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package ID (A) 110 a

Contextual Info: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-Circuit Emulation

Si4836DY

Contextual Info: Si4836DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 D TrenchFETr Power MOSFET D PWM Optimized rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 APPLICATIONS 0.004 @ VGS = 2.5 V 22 0.005 @ VGS = 1.8 V 19 D Low Voltage Synchronous Rectfication

20417

Abstract: SUM110N08-05
Contextual Info: SUM110N08-05 New Product Vishay Siliconix N-Channel 75-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.0048 @ VGS = 10 V 110 a D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS

Contextual Info: SUM110N08-05 New Product Vishay Siliconix N-Channel 75-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.0048 @ VGS = 10 V 110 a D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS

Contextual Info: SUM110N08-05 New Product Vishay Siliconix N-Channel 75-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.0048 @ VGS = 10 V 110 a D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS

20417

Abstract: SUM110N06-04L
Contextual Info: SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0035 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package ID (A) 110 a

EGM00LG422H00B

Abstract: EGM00PJ510H00B EBM00CK210L00V Roederstein EGM EBM00HE410 ELM/EBM EGM00NG447H00B 60348-4 EBM00FL310J00V EBM00CK247G00V
Contextual Info: ELM/EBM/EGM Vishay Roederstein Aluminum Electrolytic Capacitors Axial Miniature Capacitor Style ELM/EBM/EGM Solder Ring Termination as EGM03 FEATURES • Polarized aluminum electrolytic capacitor • Miniature product • High C.U product • Charge/discharge proof

Si7940DP

Abstract: Si7940 20416
Contextual Info: Si7940DP New Product Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V