Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    084N06L Search Results

    SF Impression Pixel

    084N06L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPP084N06L3GXKSA1

    Power Field-Effect Transistor, 50A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPP084N06L3GXKSA1 30,728 1
    • 1 -
    • 10 -
    • 100 $0.93
    • 1000 $0.77
    • 10000 $0.69
    		Buy Now
    Vyrian IPP084N06L3GXKSA1 8,944
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Infineon Technologies AG IPI084N06L3GXKSA1

    MOSFET N-Channel 60V 50A (Tc) TO262-3 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPI084N06L3GXKSA1 118,837 1
    • 1 -
    • 10 -
    • 100 $0.59
    • 1000 $0.49
    • 10000 $0.44
    		Buy Now
    Vyrian IPI084N06L3GXKSA1 12,638
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Infineon Technologies AG IPP084N06L3GHKSA1

    Power Field-Effect Transistor, 50A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPP084N06L3GHKSA1 6,952
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    084N06L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    084N06L

    Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
    Contextual Info: Type IPB081N06L3 G 084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb081n06l3ipp084n06l3iec61249-2-21pg-to263-3+5pg-to220-3081n06l084n06lipp084n06l3gjesd22 PDF

    084N06L

    Abstract: 081N06L
    Contextual Info: Type IPB081N06L3 G 084N06L3 G 084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb081n06l3ipp084n06l3ipi084n06l3iec61249-2-21+5pg-to263-3pg-to220-3pg-to262-3084n06l081n06l PDF

    084N06L

    Abstract: smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPB081N06L3 IPP084 D50A5
    Contextual Info: IPB081N06L3 G 084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb081n06l3ipp084n06l3pg-to263-3pg-to220-3+8081n06l084n06lsmd marking d50jesd22ipp084n06marking d50ipp084d50a5 PDF

    084N06L

    Abstract: 081N06L
    Contextual Info: IPB081N06L3 G 084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipb081n06l3ipp084n06l3pg-to263-3081n06l+2pg-to220-3084n06l PDF