0830 TC Search Results

SC87C451CCN64

Abstract: SC87C451 SC80C451C*N64 87C451 64 pin dip 87C451 SC80C451 ATS 16Mhz 80C451 80C51 83C451
Contextual Info: Philips Components-Signetics Document No. 853-0830 ECN No. 98686 Date of Issue February 1, 1990 Status Product Specification 80C451 /83C451 /87C451 CMOS single-chip 8-bit microcontroller Application Specific Product PIN CONFIGURATION DESCRIPTION FEATURES Tha P hilips 8XC451 is an I/O expanded

injection laser diode

Abstract: EYP-TPA-0830-01000-4006-CMT04-0000 830nm
Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0830-01000-4006-CMT04-0000 General Product Information Product Application 830 nm Tapered Amplifier

Power output ic la 4451

Abstract: AOS WEEK CODE identify SC80C451 output ic la 4451 LA 4451 SC87C451CGA68
Contextual Info: Philips Components-Signetics Document No. 853-0830 ECN No. 98688 Date of Issue February 1, 1990 Status Product Specification 80C451 /83C451 /87C451 CMOS single-chip 8-bit microcontroller Application Specific Product DESCRIPTION FEATURES The Philips 8XC451 is an I/O expanded

HP 5082-0885

Abstract: HP STEP RECOVERY DIODES 5082-0830 5082-0320 5082-0253 5082-0885 SS88 hp 5082 step recovery 5082-0335 5082-0800
Contextual Info: H UUU75fl4 Ü00cî755 471 M H P A 4 4 4 , i 0 H UUU HEWLETT- PACKARD/ CMPNTS hlE Whlü HEWLETT IFUm PACKARD » Ceramic Packaged Step Recovery Diodes “U S 5082-0300 SSI 5082-0800 Technical Data 5082-0830 5082-0835 5082-0885 Features • UHF T h rough Ku B and

ADC0830

Abstract: 1a02a MC6800 4 input multiplexer low power
Contextual Info: N ovem ber 1989 ADC0830 jmP Compatible 8-Bit A /D with 21 Channel MUX/Digital Inputs General Description The AD C 0830 data a cquisition co m po n e nt js ^ a jn o n o lith ic , ion-im planted, low threshold m etal g a t^ C M O S jd e v ic e . It c ontains a 16 c h a n n e l a na lo g m ultiplexer; an~lTbit ra tiom e tric a n a lo g to d ig ita l co nve rter; a 9 ch a n n e l d ig ita l in p u t regis­

Contextual Info: SRT Resistor Technology Current Sensing Chip Resistors Type: CS Sizes: 0201 … 2512 Features: • • • • • • Chip Resistors in thick film technology Pb-free terminations - RoHS compliant Low values Close tolerances - low TCR High power ratings up to 3W

SEG45

Contextual Info: TOSHIBA T6K11 TO SHIBA CMOS DIGITAL LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T 6 K1 1 DOT MATRIX LCD DRIVER The T6K11 driver is designed for use in small to m edium ­ sized dot matrix LCD panels. This driver can be interfaced to the M PU via an 8 -bit

VQE 23F

Abstract: MG600Q2YS60A
Contextual Info: TO SH IBA MG600Q2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG600Q2YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT

T6L64

Abstract: toshiba R56 r161 256
Contextual Info: TOSHIBA TENTATIVE T6L64 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUITS SILICON MONOLITHIC T6L64 SOURCE DRIVER FOR TFT LCD PANELS The T6L64 is a 256-gray-level, 384-channel-output source driver for TFT LCD panels. The device accepts 8 bit x 6 dot digital data inputs, for which the direction of data

nf 922

Contextual Info: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)

current sense

Abstract: RL3720W Series RL3720 3720W
Contextual Info: Product Family: Current Sense Chip Resistor Long Electrode Part Number Series: RL Series Construction: Features: • • • • • • • • High Purity Alumina Substrate Thin-film resistive element Wrap around electrodes—long side for higher power handling

Contextual Info: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LO W NOISE AM PLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Low Noise Figure : N F = 0.7dB f=1.5G H z • High G ain : Ga = 21.5dB (f=1.5G H z)

L7520

Abstract: 350-t
Contextual Info: Low RVThin Film Chip Resistors RL Series 1.0 Application Excellent performance in resistance tolerance, temperature characteristics, noise and long term sta­ bility, this low resistance value chip resistor is useful in many current sensing applications. It offers

30M6M

Abstract: 245 tcr 400PP
Contextual Info: Current Sensing Chip Resistors NCST Series FEATURES • • • • RoHS Compliant SURFACE MOUNTABLE 0402 ~ 7520 CASE SIZE PRECISON TOLERANCE ±1% POWER RATINGS UP TO 3 WATTS Pb-FREE REFLOW COMPATIBLE includes all homogeneous materials *See Part Number System for Details

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5263
Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC5315

Contextual Info: 2SC5315 TO SHIBA TENTATIVE 2SC5315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2.5-0.3 + 0.25 • • , 1-5-°-15.| Low Noise Figure : NF = 1.3dB (f=2GHz)

2SC5317

Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 r , i 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

2SC5258

Contextual Info: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC5322

Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r , i 0.8 ± 0 . 1, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain

2SC5257

Contextual Info: TOSHIBA 2SC5257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5257 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 • • 2.9-0.3 : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) Low Noise Figure High Gain -e MAXIMUM RATINGS (Ta = 25°C)

2SC5316

Contextual Info: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain

2SC5262

Contextual Info: TOSHIBA 2SC5262 TO SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE 2SC5262 Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS + 0.2 • • 2.9-0.3 : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) Low Noise Figure High Gain -e M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: Construction: • • • • High Purity Alumina Substrate Thin-film resistive element Wrap around electrodes—long side for higher power handling 100% matte tin over Ni terminations RoHS compliant and Pb Free • • • • 1508 and 3008 English sizes

0.005 ohm 2w 1225 size

Abstract: CSRN2010 CSR2512 CSR20.10 1% A
Contextual Info: CSR/CSRN Series Stackpole Electronics, Inc. Thick Film Current Sensing Resistor Features: • • • • • • Resistive Product Solutions 0402 to 2512 & 1225 sizes available Power ratings to 3W Low inductance – less than 0.2nH typically RoHS compliant