080K-- Search Results
080K-- Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
NCE3080KA
|
NCEPOWER | NCE3080KA is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||
NCE5080K
|
NCEPOWER | NCE5080K N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 80A continuous drain current, RDS(ON) less than 7.5mΩ at VGS=10V, and low gate charge for high-frequency switching applications. | Original | ||||
NCEA6080K
|
NCEPOWER | NCEA6080K is a 60V, 80A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 6.2mΩ at VGS=10V and high current capability in a TO-252-2L package. | Original | ||||
NCEA4080K
|
NCEPOWER | NCEA4080K is an automotive-grade N-channel enhancement mode power MOSFET with 40V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.6mΩ at 10V gate-source voltage, suitable for load switching and PWM applications. | Original | ||||
NCE4080K
|
NCEPOWER | NCE4080K N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 80A continuous drain current, RDS(ON) less than 7mΩ at VGS=10V, and low gate charge, suitable for PWM and load switching applications. | Original | ||||
NCE6080K
|
NCEPOWER | NCE6080K is a 60V, 80A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 7 mΩ at VGS = 10V and high current capability in a TO-252-2L package. | Original | ||||
NCE3080K
|
NCEPOWER | NCE3080K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-state resistance of 4.5mΩ at 10V gate voltage, using advanced trench technology for high efficiency switching applications. | Original | ||||
JX080K
|
Jiangsu JieJie Microelectronics Co Ltd | 8 A sensitive gate SCR with 800 V repetitive peak off-state voltage, high dV/dt capability, and TO-252 package, suitable for applications requiring robust electromagnetic interference resistance. | Original |
080K-- Price and Stock
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onsemi UF3C120080K3SSICFET N-CH 1200V 33A TO247-3 |
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UF3C120080K3S | 33 Weeks | 30 |
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onsemi UF3C065080K3SMOSFET N-CH 650V 31A TO247-3 |
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UF3C065080K3S | 33 Weeks | 30 |
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Cornell Dubilier Electronics Inc 380LX682M080K052CAP ALUM 6800UF 20% 80V SNAP TH |
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Essentra Components 50M050080K010BOLT HEX HEAD SLOTTED M5X0.8 |
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50M050080K010 |
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onsemi UJ3C120080K3SSICFET N-CH 1200V 33A TO247-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
UJ3C120080K3S | Tube | 2,352 | 1 |
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UJ3C120080K3S | Bulk | 776 | 1 |
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UJ3C120080K3S | 33 Weeks | 600 |
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UJ3C120080K3S |
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