NCE3080KA
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NCEPOWER
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NCE3080KA is an N-channel enhancement mode power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at 10V gate-source voltage, suitable for high-frequency switching applications. |
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NCE5080K
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NCEPOWER
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NCE5080K N-Channel Enhancement Mode Power MOSFET with 50V drain-source voltage, 80A continuous drain current, RDS(ON) less than 7.5mΩ at VGS=10V, and low gate charge for high-frequency switching applications. |
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NCEA6080K
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NCEPOWER
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NCEA6080K is a 60V, 80A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 6.2mΩ at VGS=10V and high current capability in a TO-252-2L package. |
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NCEA4080K
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NCEPOWER
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NCEA4080K is an automotive-grade N-channel enhancement mode power MOSFET with 40V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.6mΩ at 10V gate-source voltage, suitable for load switching and PWM applications. |
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NCE4080K
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NCEPOWER
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NCE4080K N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 80A continuous drain current, RDS(ON) less than 7mΩ at VGS=10V, and low gate charge, suitable for PWM and load switching applications. |
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NCE6080K
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NCEPOWER
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NCE6080K is a 60V, 80A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of less than 7 mΩ at VGS = 10V and high current capability in a TO-252-2L package. |
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JX080K
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Jiangsu JieJie Microelectronics Co Ltd
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8 A sensitive gate SCR with 800 V repetitive peak off-state voltage, high dV/dt capability, and TO-252 package, suitable for applications requiring robust electromagnetic interference resistance. |
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NCE3080K
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NCEPOWER
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NCE3080K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-state resistance of 4.5mΩ at 10V gate voltage, using advanced trench technology for high efficiency switching applications. |
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NCE3080KA
