JMTP080N04D
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 13A dual N-channel enhancement mode power MOSFET in SOP-8 package with RDS(ON) less than 10.3mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS and ΔVds tested. |
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AKP080N10
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AK Semiconductor
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AKP080N10 N-Channel Super Trench II Power MOSFET, 100V VDS, 75A ID, 7.4mΩ RDS(on) typical at VGS=10V, TO-220 package, suitable for high-frequency switching and synchronous rectification applications. |
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AKP080N85
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP080N85 with 85V VDS, 80A ID, 7.5mΩ RDS(on) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. |
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JMTG080N04D
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-channel enhancement mode power MOSFET with 40V drain-source voltage, 45A continuous drain current, and low on-resistance of less than 9.6m ohms at VGS = 10V, housed in a PDFN5x6-8L-D package. |
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JMTP080N04A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 15A N-channel Enhancement Mode Power MOSFET in SOP-8 package with RDS(ON) less than 8.5mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
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AKP080N12
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET with 120V drain-source voltage, 90A continuous drain current, 7.5mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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JMTI080N02A
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Jiangsu JieJie Microelectronics Co Ltd
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20V, 50A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 7.5mΩ at VGS=4.5V, TO-251-3L package, designed for load switching, PWM, and power management applications. |
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JMTV080N02A
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Jiangsu JieJie Microelectronics Co Ltd
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20V, 20A N-channel Enhancement Mode Power MOSFET in DFN2020-6L package with RDS(ON) less than 9.0mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
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JMTP080N04D
