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    08-0N Search Results

    08-0N Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge AKP080N10
    AK Semiconductor AKP080N10 N-Channel Super Trench II Power MOSFET, 100V VDS, 75A ID, 7.4mΩ RDS(on) typical at VGS=10V, TO-220 package, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge JMTP080N04D
    Jiangsu JieJie Microelectronics Co Ltd 40V, 13A dual N-channel enhancement mode power MOSFET in SOP-8 package with RDS(ON) less than 10.3mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS and ΔVds tested. Original PDF
    badge AKP080N85
    AK Semiconductor N-Channel Super Trench II Power MOSFET AKP080N85 with 85V VDS, 80A ID, 7.5mΩ RDS(on) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge JMTG080N04D
    Jiangsu JieJie Microelectronics Co Ltd Dual N-channel enhancement mode power MOSFET with 40V drain-source voltage, 45A continuous drain current, and low on-resistance of less than 9.6m ohms at VGS = 10V, housed in a PDFN5x6-8L-D package. Original PDF
    badge AKP080N12
    AK Semiconductor N-Channel Super Trench II Power MOSFET with 120V drain-source voltage, 90A continuous drain current, 7.5mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge JMTP080N04A
    Jiangsu JieJie Microelectronics Co Ltd 40V, 15A N-channel Enhancement Mode Power MOSFET in SOP-8 package with RDS(ON) less than 8.5mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. Original PDF
    badge JMTI080N02A
    Jiangsu JieJie Microelectronics Co Ltd 20V, 50A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 7.5mΩ at VGS=4.5V, TO-251-3L package, designed for load switching, PWM, and power management applications. Original PDF
    badge JMTV080N02A
    Jiangsu JieJie Microelectronics Co Ltd 20V, 20A N-channel Enhancement Mode Power MOSFET in DFN2020-6L package with RDS(ON) less than 9.0mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested. Original PDF
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    08-0N Price and Stock

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    Rochester Electronics LLC AT25080N-10SI-2.7

    IC EEPROM 8KBIT SPI 3MHZ 8SOIC
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    DigiKey AT25080N-10SI-2.7 Tube 9,617 178
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    Rochester Electronics LLC SN700080N

    QUAD 2-1 DATA SELE/MULTIP
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    DigiKey SN700080N Bulk 5,725 566
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    Rochester Electronics LLC P4080NSE7MMC

    IC MPU QORIQ P4 1.5GHZ 1295BGA
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    DigiKey () P4080NSE7MMC Bulk 5,368 1
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    P4080NSE7MMC Bulk 1,420 1
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    Rochester Electronics LLC LM3080N

    IC OPAMP TRANSCOND 1 CIRC 8MDIP
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    DigiKey LM3080N Bulk 4,102 42
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    Rochester Electronics LM3080N 4,102 1
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    Infineon Technologies AG PVI5080NPBF

    OPTOISO 4KV PHVOLT 8DIP MODIFIED
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    DigiKey PVI5080NPBF Tube 1,237 1
    • 1 $6.46
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    Avnet Americas PVI5080NPBF Tube 12 Weeks 2,000
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    Newark PVI5080NPBF Bulk 751 1
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    RS PVI5080NPBF Bulk 200
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    Bristol Electronics PVI5080NPBF 516
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    EBV Elektronik PVI5080NPBF 13 Weeks 2,000
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