08-0N Search Results
08-0N Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
AKP080N10
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AK Semiconductor | AKP080N10 N-Channel Super Trench II Power MOSFET, 100V VDS, 75A ID, 7.4mΩ RDS(on) typical at VGS=10V, TO-220 package, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
JMTP080N04D
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 13A dual N-channel enhancement mode power MOSFET in SOP-8 package with RDS(ON) less than 10.3mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS and ΔVds tested. | Original | ||||
AKP080N85
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AK Semiconductor | N-Channel Super Trench II Power MOSFET AKP080N85 with 85V VDS, 80A ID, 7.5mΩ RDS(on) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
JMTG080N04D
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Jiangsu JieJie Microelectronics Co Ltd | Dual N-channel enhancement mode power MOSFET with 40V drain-source voltage, 45A continuous drain current, and low on-resistance of less than 9.6m ohms at VGS = 10V, housed in a PDFN5x6-8L-D package. | Original | ||||
AKP080N12
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AK Semiconductor | N-Channel Super Trench II Power MOSFET with 120V drain-source voltage, 90A continuous drain current, 7.5mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
JMTP080N04A
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 15A N-channel Enhancement Mode Power MOSFET in SOP-8 package with RDS(ON) less than 8.5mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||
JMTI080N02A
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Jiangsu JieJie Microelectronics Co Ltd | 20V, 50A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 7.5mΩ at VGS=4.5V, TO-251-3L package, designed for load switching, PWM, and power management applications. | Original | ||||
JMTV080N02A
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Jiangsu JieJie Microelectronics Co Ltd | 20V, 20A N-channel Enhancement Mode Power MOSFET in DFN2020-6L package with RDS(ON) less than 9.0mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested. | Original |
08-0N Price and Stock
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Infineon Technologies AG ISC080N10NM6ATMA1TRENCH >=100V PG-TDSON-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ISC080N10NM6ATMA1 | Cut Tape | 26,387 | 1 |
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ISC080N10NM6ATMA1 | Tape & Reel | 52 Weeks | 5,000 |
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| ISC080N10NM6ATMA1 | Ammo Pack | 1 |
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ISC080N10NM6ATMA1 | Cut Tape | 110 | 1 |
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| ISC080N10NM6ATMA1 | Tape & Reel | 110 | 100 |
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ISC080N10NM6ATMA1 | Bulk | 5 | 3 Weeks | 1 |
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ISC080N10NM6ATMA1 | 53 Weeks | 5,000 |
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Essentra Components 50M050080N025MACH SCREW PAN SLOTTEDM5X0.8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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50M050080N025 | Bulk | 2,803 | 1 |
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50M050080N025 | Bulk | 4 Weeks | 500 |
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50M050080N025 |
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Essentra Components 50M050080N016BPAN SLOTTED SCREW, M5 X .8 THREA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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50M050080N016B | Bag | 1,000 | 1 |
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50M050080N016B |
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Essentra Components 50M050080N015BPAN SLOTTED SCREW, M5 X .8 THREA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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50M050080N015B | Bag | 1,000 | 1 |
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50M050080N015B |
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Raltron Electronics Corporation RDTE-2.700-8080-NS1BUZZER MAGN 3.6V 0.315X 0.315SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RDTE-2.700-8080-NS1 | Tape & Reel | 979 | 1,000 |
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| RDTE-2.700-8080-NS1 | Digi-Reel | 979 | 1 |
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| RDTE-2.700-8080-NS1 | Cut Tape | 979 | 1 |
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