07JUL201 Search Results

PBT/PBT GF15 connector

Abstract: PBT GF15 connector
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 RELEASED FOR PUBLICATION 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P A B D DESCRIPTION LTR C DATE DWN APVD FIRST ISSUE 11FEB2009 AV GT ADDED LOAD MARKS 07JUL2011 AV GT REVISED PER ECR-14-004322 27MAR2014 RS

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. P A A1 D DESCRIPTION LTR B C DATE DWN APVD FIRST ISSUE 11FEB2009 CHANGED RAW MTL ACC.TO UL REQUIREMENTS 30NOV2009 AV GT ADDED LOAD MARKS 07JUL2011

Contextual Info: SM20100D1 VOLTAGE 100 V 20Amps Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z Low forward voltage drop High current capability High reliability High surge current capability

Contextual Info: SM1645D1 VOLTAGE 45 V 16Amps Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z Low forward voltage drop High current capability High reliability High surge current capability

9435P

Abstract: SSG9435P
Contextual Info: SSG9435P P-Ch Enhancement Mode Power MOSFET -5.7 A, -30 V, RDS ON 49 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to

STL70N

Contextual Info: STL70N2LLH5 N-channel 30 V, 0.0059 Ω, 18 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL70N2LLH5 30 V <0.0068 Ω 18 A (1) 8 1. This value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark

tyco 114-5148

Contextual Info: 2 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PUBLICATION JUN 1990. R E V IS IO N S ALL RIGHTS RESERVED. COPYRIGHT 1990 By Tyco E le c tro n ic s Japo n O.K. LTR D E S C R IP TIO N REVISED 9 "T V - U > v W IRE PER DATE E C R - 1 1- 00 71 43 DWN

tyco 114-5148

Contextual Info: 2 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PUBLICATION JUN 1990- R E V IS IO N S ALL RIGHTS RESERVED. COPYRIGHT 1990 By Tyco E le c tro n ic s Japo n 9 G.K. "T V - LTR U > C v D E S C R IP TIO N RE VISED PER DATE E C R - 1 1- 00 71 43 DWN

Schottky

Abstract: SOD123 footprint marking code 153 DIODE sod 23 BAT48JFILM ST Low Forward Voltage Schottky Diode sod 323 SOD-123 marking code A1 SOD-323 marking code a2 12634 NV SOD MARKING CODE
Contextual Info: BAT48 Small signal Schottky diode Features • Low leakage current losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode BAT48ZFILM Single SOD-123

Contextual Info: STPS1L20MF Low drop power Schottky rectifier in flat package Features A • Very low profile package: 0.85 mm ■ Backward compatible with standard STmite footprint ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching

Contextual Info: 2 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . RELEASED FOR PUBLICATION JUN 1990- REVISIO N S ALL RIGHTS RESERVED. 1990 By Tyco E le c tro n ic s Japo n G.K. LTR D E S C R IP TIO N REVISED 9 "T A7 — b > v W IRE D PER DATE E C R - 1 1- 00 71 43

Contextual Info: STL70N2LLH5 N-channel 30 V, 0.0059 Ω, 18 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL70N2LLH5 30 V <0.0068 Ω 18 A (1) 8 5 1. This value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark

lin bus example C codes

Abstract: errata stm8 STM8S20xxx pm0044 STM8S208MB errata sheet STM8S207C6 i2c berr stm8 STM8 CPU programming manual STM8S207R8 STM8S207S6
Contextual Info: STM8S20xxx Errata sheet STM8S performance line device limitations Silicon identification This errata sheet applies to revisions X and Y/6 of the STMicroelectronics STM8S performance line products. A full list of part numbers is shown in Table 1. The products can be identified see Table 2 by:

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - DIM C REF D 1 MATERIAL: HOUSING: LCP, COLOR: 2 CONTACTS: BRASS. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL ENTIRE POST . 3 HOLDDOWN: COPPER ALLOY. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL .

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - DIM C REF D 1 MATERIAL: HOUSING: LCP, COLOR: 2 CONTACTS: BRASS. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL ENTIRE POST . 3 HOLDDOWN: COPPER ALLOY. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL.

Contextual Info: SM20100D1 VOLTAGE 100 V 20Amps Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z Low forward voltage drop High current capability High reliability High surge current capability

DO222

Abstract: f1l2 marking DO222A
Contextual Info: STPS1L20MF Low drop power Schottky rectifier in flat package Features A • Very low profile package: 0.85 mm ■ Backward compatible with standard STmite footprint ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R 1G H T S 20 LOC CM RESERVED. DIST R E V ISIONS oo LTR DESCRIPTION DATE R E V I S E D P E R E C R - 10 - 0 I 3 3 5 9 A A MATERIAL: HOUSING:

Contextual Info: L6924D Battery charger system with integrated power switch for Li-Ion/Li-Polymer Features • Fully integrated solution, with a power MOSFET, reverse blocking diode, sense resistor, and thermal protection ■ Ideal for coke and graphite anode single-cell Li-Ion packs

8N65M5

Abstract: VCL40
Contextual Info: STL8N65M5 N-channel 650 V, 0.56 Ω, 7 A MDmesh V Power MOSFET in PowerFLAT™ 5x5 Features Order code STL8N65M5 VDSS @ TJmax 710 V RDS on max ID 7 8 6 < 0.6 Ω 7A 9 (1) 5 10 11 1. The value is rated according to Rthj-case 4 3 12 • Worldwide best RDS(on) * area

SMG2339P

Abstract: MosFET
Contextual Info: SMG2339P -3.6 A, -30 V, RDS ON 0.057  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process

BAT48RL

Contextual Info: BAT48 Small signal Schottky diode Features • Low leakage current losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode BAT48ZFILM Single SOD-123

bucher

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V ISIONS 00 CM RESERVED. LTR DESCRIPTION REVISED A MATERIAL: HOUSING: LCP, CONTACTS : BRASS. FINISH: 2 . 5 4 jjm M I N